Stability analysis of equivalent series resistance of output capacitor in fixed off-time controlled Buck converter

Zhang Xi; Bao Bo-Cheng; Wang Jin-Ping; Ma Zheng-Hua; Xu Jian-Ping

doi:10.7498/aps.61.160503

Abstract

Based on the power simulation software, the reason of the output voltage phase lagging behind the inductor current phase is analyzed qualitatively, and the mechanism to cause the pulse bursting phenomenon in fixed-off-time (FOT) controlled Buck converter is explained. The way to choose the equivalent series resistance (ESR) of output capacitor to eliminate these complex nonlinear phenomena is discussed. The critical ESR to ensure the state operation of FOT controlled Buck converter is obtained. The study results indicate that the ESR has a great effect on the operation state of FOT controlled Buck converter. When the ESR is smaller than the critical value, the output voltage phase lags behind the inductor current phase, resulting in the pulse bursting phenomenon; while when the ESR is larger than the critical value, the output voltage variation keeps in phase with the inductor current variation, the pulse bursting phenomenon disappearing. In addition, the describing function method is used to obtain the transfer function from the reference voltage to the output voltage. By using the Routh-Hurwitz criterion, it is indicated that the critical ESR is the condition of destabilizing FOT controlled Buck converter.

Keywords:

Authors and contacts

1.
School of Information Science and Engineering, Changzhou University, Changzhou 213164, China;
2.
School of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51177140).

References

[1]	Bao B C, Zhou G H, Xu J P, Liu Z 2011 IEEE Trans. Power Electron. 26 1968
[2]	Bao B C, Xu J P, Liu Z 2009 Chin. Phys. B 18 4742
[3]	Bao B C, Xu J P, Liu Z 2009 Acta Phys. Sin. 58 2949 (in Chinese) [包伯成, 许建平, 刘中 2009 物理学报 58 2949]
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[5]	Bao B C, Zhou G H, Xu J P, Liu Z 2010 Acta Phys. Sin. 59 3769 (in Chinese) [包伯成, 周国华, 许建平, 刘中 2010 物理学报 59 3769]
[6]	Zhou G H, Bao B C, Xu J P, Jin Y Y 2010 Chin. Phys. B 19 050509
[7]	Zhou G H, Xu J P, Bao B C, Jin Y Y 2010 Chin. Phys. B 19 060508
[8]	Wang F Q, Ma X K, Yan Y 2011 Acta Phys. Sin. 60 060510 (in Chinese) [王发强, 马西奎, 闫晔 2011 物理学报 60 060510]
[9]	Xie F, Yang R, Zhang B 2011 IEEE Trans. Circuits Syst. I 58 2269
[10]	Liu F 2010 Chin. Phys. B 19 080511
[11]	Sahu B, Rincón-Mora G A 2007 IEEE Trans. Circuits Syst. I 54 312
[12]	Li J, Lee F C 2010 IEEE Trans. Circuits Syst. I 57 2552
[13]	Wang J P, Xu J P, Xu Y J 2011 Acta Phys. Sin. 60 058401 (in Chinese) [王金平, 许建平, 徐杨军 2011 物理学报 60 058401]
[14]	Wang J P, Xu J P, Bao B C 2011 IEEE Trans. Ind. Electron. 58 5406
[15]	Sun J 2002 IEEE Trans. Aerospace Electron Syst. 38 1104
[16]	Panov Y, Jovanović M M 2002 IEEE Trans. Power Electron. 17 596
[17]	Cheng L, Ni J H, Hong Z L, Liu Y 2011 Research and Progress of Solid Electronics 31 286 (in Chinese) [程林, 倪金华, 洪志良, 刘洋 2011 固体电子学研究与进展 31 286]

Cited By

[1]	Bao B C, Zhou G H, Xu J P, Liu Z 2011 IEEE Trans. Power Electron. 26 1968
[2]	Bao B C, Xu J P, Liu Z 2009 Chin. Phys. B 18 4742
[3]	Bao B C, Xu J P, Liu Z 2009 Acta Phys. Sin. 58 2949 (in Chinese) [包伯成, 许建平, 刘中 2009 物理学报 58 2949]
[4]	Xie F, Yang R, Zhang B 2010 Acta Phys. Sin. 59 8393 (in Chinese) [谢帆, 杨汝, 张波 2010 物理学报 59 8393]
[5]	Bao B C, Zhou G H, Xu J P, Liu Z 2010 Acta Phys. Sin. 59 3769 (in Chinese) [包伯成, 周国华, 许建平, 刘中 2010 物理学报 59 3769]
[6]	Zhou G H, Bao B C, Xu J P, Jin Y Y 2010 Chin. Phys. B 19 050509
[7]	Zhou G H, Xu J P, Bao B C, Jin Y Y 2010 Chin. Phys. B 19 060508
[8]	Wang F Q, Ma X K, Yan Y 2011 Acta Phys. Sin. 60 060510 (in Chinese) [王发强, 马西奎, 闫晔 2011 物理学报 60 060510]
[9]	Xie F, Yang R, Zhang B 2011 IEEE Trans. Circuits Syst. I 58 2269
[10]	Liu F 2010 Chin. Phys. B 19 080511
[11]	Sahu B, Rincón-Mora G A 2007 IEEE Trans. Circuits Syst. I 54 312
[12]	Li J, Lee F C 2010 IEEE Trans. Circuits Syst. I 57 2552
[13]	Wang J P, Xu J P, Xu Y J 2011 Acta Phys. Sin. 60 058401 (in Chinese) [王金平, 许建平, 徐杨军 2011 物理学报 60 058401]
[14]	Wang J P, Xu J P, Bao B C 2011 IEEE Trans. Ind. Electron. 58 5406
[15]	Sun J 2002 IEEE Trans. Aerospace Electron Syst. 38 1104
[16]	Panov Y, Jovanović M M 2002 IEEE Trans. Power Electron. 17 596
[17]	Cheng L, Ni J H, Hong Z L, Liu Y 2011 Research and Progress of Solid Electronics 31 286 (in Chinese) [程林, 倪金华, 洪志良, 刘洋 2011 固体电子学研究与进展 31 286]

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