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The total dose irradiation effects of SOI NMOS devices under different bias conditions

Zhuo Qing-Qing Liu Hong-Xia Yang Zhao-Nian Cai Hui-Min Hao Yue

The total dose irradiation effects of SOI NMOS devices under different bias conditions

Zhuo Qing-Qing, Liu Hong-Xia, Yang Zhao-Nian, Cai Hui-Min, Hao Yue
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  • Received Date:  24 April 2012
  • Accepted Date:  14 June 2012
  • Published Online:  20 November 2012

The total dose irradiation effects of SOI NMOS devices under different bias conditions

  • 1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 61076097, 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China Program (Grant No. 708083), and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 200110203110012).

Abstract: Based on 0.8 μm process, in the paper we investigate the total dose irradiation effects of SOI NMOS devices under different bias conditions. The devices are exposed to 60Co γ ray at a dose rate of 50 rad (Si)/s. In higher gate bias condition, the drain leakage current increases because more positive charges are trapped in the buried oxide. When the applied gate voltage is larger than the threshold voltage, its drain current of the front gate in ID-VG characteristic suddenly increases and the body current presents a unique upside down bell shape.

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