The total dose irradiation effects of SOI NMOS devices under different bias conditions

Zhuo Qing-Qing; Liu Hong-Xia; Yang Zhao-Nian; Cai Hui-Min; Hao Yue

doi:10.7498/aps.61.220702

Abstract

Based on 0.8 μm process, in the paper we investigate the total dose irradiation effects of SOI NMOS devices under different bias conditions. The devices are exposed to 60Co γ ray at a dose rate of 50 rad (Si)/s. In higher gate bias condition, the drain leakage current increases because more positive charges are trapped in the buried oxide. When the applied gate voltage is larger than the threshold voltage, its drain current of the front gate in ID-VG characteristic suddenly increases and the body current presents a unique upside down bell shape.

Keywords:

Authors and contacts

1.
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076097, 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China Program (Grant No. 708083), and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 200110203110012).

References

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[2]	Paillet P, Gaillardin M, Ferlet-Cavrois V, Torres A, Faynot O, Jahan C, Tosti L, Cristoloveanu S 2005 IEEE Trans. Nucl. Sci. 52 2345
[3]	Adell P C, Barnaby H J, Schrimpf R D, Vermeire B 2007 IEEE Trans. Nucl. Sci. 54 2174
[4]	Liu Z L Hu Z X Zhang Z X Shao H Ning B X Bi D W Chen M Zou S C 2011 ActaPhys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[5]	Fleetwood D M, Shaneyfelt M R, Schwank J R, Winokur P, Sexton F 1989 IEEE Trans. Nucl. Sci. 36 1816
[6]	Jun B, Fleetwood D M, Schrimpf R, Zhou X, Montes E, Cristoloveanu S 2003 IEEE Trans. Nucl. Sci. 5 1891
[7]	Schwank J R, Fleetwood D M, Shaneyfelt M R, Winokur P 1993 IEEE Trans. Nucl. Sci. 40 1666
[8]	Flament O, Torres A, Ferlet-Cavrois V 2003 IEEE Trans. Nucl. Sci. 5 2316
[9]	Ferlet-Cavrois V, Colladant T, Paillet P, Leray J, Musseau O, Schwank J R, Shaneyfelt M R, Pelloie J, Poncharraorst J P 200 IEEE Trans. Nucl. Sci. 47 2183

Cited By

[1]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
[2]	Paillet P, Gaillardin M, Ferlet-Cavrois V, Torres A, Faynot O, Jahan C, Tosti L, Cristoloveanu S 2005 IEEE Trans. Nucl. Sci. 52 2345
[3]	Adell P C, Barnaby H J, Schrimpf R D, Vermeire B 2007 IEEE Trans. Nucl. Sci. 54 2174
[4]	Liu Z L Hu Z X Zhang Z X Shao H Ning B X Bi D W Chen M Zou S C 2011 ActaPhys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[5]	Fleetwood D M, Shaneyfelt M R, Schwank J R, Winokur P, Sexton F 1989 IEEE Trans. Nucl. Sci. 36 1816
[6]	Jun B, Fleetwood D M, Schrimpf R, Zhou X, Montes E, Cristoloveanu S 2003 IEEE Trans. Nucl. Sci. 5 1891
[7]	Schwank J R, Fleetwood D M, Shaneyfelt M R, Winokur P 1993 IEEE Trans. Nucl. Sci. 40 1666
[8]	Flament O, Torres A, Ferlet-Cavrois V 2003 IEEE Trans. Nucl. Sci. 5 2316
[9]	Ferlet-Cavrois V, Colladant T, Paillet P, Leray J, Musseau O, Schwank J R, Shaneyfelt M R, Pelloie J, Poncharraorst J P 200 IEEE Trans. Nucl. Sci. 47 2183

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Catalog

Vol. 61, Issue 22 - 2012-11-20

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