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Dielectric property and relaxation mechanism of CaCu3Ti4O12 ceramic

Cheng Peng-Fei Wang Hui Li Sheng-Tao

Dielectric property and relaxation mechanism of CaCu3Ti4O12 ceramic

Cheng Peng-Fei, Wang Hui, Li Sheng-Tao
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  • In this paper, the dielectric property of CaCu3Ti4O12 ceramic is measured by Novocontrol wide band dielectric spectrometer in a temperature range of -100-100 ℃ and frequency range of 0.1 Hz-10 MHz, and the corresponding dielectric relaxation mechanism is discussed. Firstly, on the basis of quantitative analysis of macroscopic shell-core structure, the possibility of colossal dielectric constant (CDC) originating from the surface insulated layer effect is rejected. Secondly, after the analysis of the nature of classical Maxwell-Wagner sandwich polarization and its activation energy, classical Maxwell-Wagner mechanism is also abandoned. Finally, a new model of trapped electron relaxation at the boundary of Schottky barrier is proposed. The new mechanism correctly reflects the essential connection between intrinsic point defects, conductivity and dielectric constant of CaCu3Ti4O12material.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51277138, 50972118), the Scientific Research Plan Projects of Education Department of Shaanxi Province of China (Grant No. 12JK0434), and the Doctoral Scientific Research Foundation (Grant No. BS0814).
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    Subramanian M A, Li D, Duan N, Reisner B A, Sleight A W 2000 J. Solid State Chem. 151 323

    [2]

    Li J, Sleight A W, Subramanian M A 2005 Solid State Comm. 135 260

    [3]

    Sinclair D C, Adams T B, Morrison F D, West A R 2002 Appl. Phys. Lett. 80 2153

    [4]

    Adams T B, Sinclair D C, West A R 2002 Adv. Mater. 14 321

    [5]

    Wang C C, Zhang L W 2006 Appl. Phys. Lett. 88 042906

    [6]

    Chen J D, Liu Z Y 1980 Dielectric Physics (Beijing: Machine Press) p178 (in Chinese) [陈季丹, 刘子玉 1980 电介质物理学 (北京: 机械工业出版社) 第178页]

    [7]

    Luo F C, He J L, Hu J, Lin Y H 2009 J. Appl. Phys. 105 076104

    [8]

    Li J Y, Zhao X T, Li S T, Alim M A 2010 J. Appl. Phys. 108 104104

    [9]

    Cheng P F, Li S T, Li J Y 2012 Adv. Mater. Res. 393-395 24

    [10]

    Cheng P F, Li S T, Li J Y 2012 Acta Phys. Sin. 61 18 (in Chinese)[成鹏飞, 李盛涛, 李建英 2012 物理学报 61 18]

    [11]

    Deng G, Yamada T, Muralt P 2007 Appl. Phys. Lett. 91 202903

    [12]

    Yang Y, Li S T 2009 Acta Phys. Sin. 58 6376 (in Chinese) [杨雁, 李盛涛 2009 物理学报 58 6376]

    [13]

    Cheng P F, Li S T, Zhang L, Li J Y 2008 Appl. Phys. Lett. 93 012902

    [14]

    Cheng P F, Li S T, Li J Y 2010 Acta Phys. Sin. 59 560 (in Chinese) [成鹏飞, 李盛涛, 李建英 2010 物理学报 59 560]

    [15]

    Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 物理学报 58 5721]

    [16]

    Li M, Feterra A, Sinclair D C, West A R 2006 Appl. Phys. Lett. 88 232903

  • [1]

    Subramanian M A, Li D, Duan N, Reisner B A, Sleight A W 2000 J. Solid State Chem. 151 323

    [2]

    Li J, Sleight A W, Subramanian M A 2005 Solid State Comm. 135 260

    [3]

    Sinclair D C, Adams T B, Morrison F D, West A R 2002 Appl. Phys. Lett. 80 2153

    [4]

    Adams T B, Sinclair D C, West A R 2002 Adv. Mater. 14 321

    [5]

    Wang C C, Zhang L W 2006 Appl. Phys. Lett. 88 042906

    [6]

    Chen J D, Liu Z Y 1980 Dielectric Physics (Beijing: Machine Press) p178 (in Chinese) [陈季丹, 刘子玉 1980 电介质物理学 (北京: 机械工业出版社) 第178页]

    [7]

    Luo F C, He J L, Hu J, Lin Y H 2009 J. Appl. Phys. 105 076104

    [8]

    Li J Y, Zhao X T, Li S T, Alim M A 2010 J. Appl. Phys. 108 104104

    [9]

    Cheng P F, Li S T, Li J Y 2012 Adv. Mater. Res. 393-395 24

    [10]

    Cheng P F, Li S T, Li J Y 2012 Acta Phys. Sin. 61 18 (in Chinese)[成鹏飞, 李盛涛, 李建英 2012 物理学报 61 18]

    [11]

    Deng G, Yamada T, Muralt P 2007 Appl. Phys. Lett. 91 202903

    [12]

    Yang Y, Li S T 2009 Acta Phys. Sin. 58 6376 (in Chinese) [杨雁, 李盛涛 2009 物理学报 58 6376]

    [13]

    Cheng P F, Li S T, Zhang L, Li J Y 2008 Appl. Phys. Lett. 93 012902

    [14]

    Cheng P F, Li S T, Li J Y 2010 Acta Phys. Sin. 59 560 (in Chinese) [成鹏飞, 李盛涛, 李建英 2010 物理学报 59 560]

    [15]

    Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 物理学报 58 5721]

    [16]

    Li M, Feterra A, Sinclair D C, West A R 2006 Appl. Phys. Lett. 88 232903

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    [3] Effect of Swift Heavy Ions Irradiation on the Microstructure and Current-Carrying Capability in YBa2Cu3O7-δ High Temperature Superconductor Films. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191914
    [4] Preparing GaN nanowires on Al2O3 substrate without catalyst and its optical property research. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191923
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  • Received Date:  07 July 2012
  • Accepted Date:  10 October 2012
  • Published Online:  05 March 2013

Dielectric property and relaxation mechanism of CaCu3Ti4O12 ceramic

  • 1. School of Science, Xi'an Polytechnic University, Xi'an 710048, China;
  • 2. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 51277138, 50972118), the Scientific Research Plan Projects of Education Department of Shaanxi Province of China (Grant No. 12JK0434), and the Doctoral Scientific Research Foundation (Grant No. BS0814).

Abstract: In this paper, the dielectric property of CaCu3Ti4O12 ceramic is measured by Novocontrol wide band dielectric spectrometer in a temperature range of -100-100 ℃ and frequency range of 0.1 Hz-10 MHz, and the corresponding dielectric relaxation mechanism is discussed. Firstly, on the basis of quantitative analysis of macroscopic shell-core structure, the possibility of colossal dielectric constant (CDC) originating from the surface insulated layer effect is rejected. Secondly, after the analysis of the nature of classical Maxwell-Wagner sandwich polarization and its activation energy, classical Maxwell-Wagner mechanism is also abandoned. Finally, a new model of trapped electron relaxation at the boundary of Schottky barrier is proposed. The new mechanism correctly reflects the essential connection between intrinsic point defects, conductivity and dielectric constant of CaCu3Ti4O12material.

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