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Analytical modeling for drain current of strained Si NMOSFET

Zhou Chun-Yu Zhang He-Ming Hu Hui-Yong Zhuang Yi-Qi Lü Yi Wang Bin Li Yu-Chen

Analytical modeling for drain current of strained Si NMOSFET

Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen
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  • Received Date:  05 August 2013
  • Accepted Date:  23 August 2013
  • Published Online:  05 December 2013

Analytical modeling for drain current of strained Si NMOSFET

  • 1. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
Fund Project:  Project supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), the Fundamental Research Funds for the Central Universities of China (Grant Nos. K5051225014, K5051225004), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

Abstract: Based on the structure of strained Si/SiGe NMOSFET, a unified drain current model is presented in this paper. The model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a smoothing function, and guarantees the continuities of the drain current and its derivatives.Furthermore, the model accuracy is enhanced by including carrier velocity saturation and channel length modulation effects. Comparisons between the model and the measured data show that the drain current model can describe the device characteristics well. The proposed model is useful for the design and simulation of digital and analogy circuits made of strained Si.

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