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In this paper, A Grove model on the homoepitaxial growth of 4H-SiC is presented, based on the structure and growth conditions of CVD system. According to the model analysis, the growth rate of 4H-SiC is quiet influenced by carrier gas flow rate and temperature, which is verified by experiments. Growth rate along the substrate has a bowl-shaped distribution, and the growth rate on the center is slightly lower than on the edge. As the carrier gas flow rate increases, the growth rate controlled by the transport changes into the reaction rate control, the growth rate first increases and then decreases. The position of highest temperature in the actor will be drifted with the carrier gas flow increasing. The reaction rate and the mass transport coefficient increase with the rise of growth temperature, which can cause the increase of growth rate. But the effect of temperature on reaction rate is much greater than on the mass transport. When the temperature rises excessively, the epitaxial growth will be determined by the mass transport. But the high reaction temperature results in forming some particles at the edge of reactor, which can reduce the growth rate, and the particles will have a chance to fall on the epitaxial layer, thus seriously affecting the quality of the epitaxial layer. All the above shows that the growth rate and thickness uniformity can effectively controlled by adjusting the flow rate of hydrogen, the rotational speed of the substrate and the growth temperature.
[1] Jawedul H, Henry A, Bergman J P, Janzen E 2006 Thin solid film 515 460
[2] Jia R X, Zhang Y M, Zhang Y M 2008 Acta Phys. Sin. 57 6649 (in Chinese) [贾仁需, 张义门, 张玉明 2008 物理学报 57 6649]
[3] www.cree.com
[4] Hirokazu F, Hideki N, Masaki K 2012 Appl. Phys. Lett. 100 242102
[5] Jia R X, Zhang Y M, Zhang Y M 2012 Journal Wuhan University of Technology Materials Science Edition 27 415
[6] Jia R X, Zhang Y M, Zhang Y M 2008 Acta Phys. Sin. 57 4456 (in Chinese) [贾仁需, 张义门, 张玉明 2008 物理学报 57 4456]
[7] Bin C, Matsuhata H, Sekiguchi T, Kinoshita A, Ichinoseki K, Okumura H 2012 Appl. Phys. Lett. 100 132108
[8] Bergman J P, Lendenmann H, Nilsson P A, Lindefeit U, Skytt P 2001 Mater. Sci. Forum 299 353
[9] Lofgren P M, Ji W, Hallin C Gu C Y 2000 Electoro. Soc 147 164
[10] Veneroni A, Omarini F Moscatelli D, Maurizio M, Stefano L, Marco M, Giuseppe P, Giuseppe A 2005 J. Cryst. Growth 275 295
[11] Meziere J, Ucar M, Blanquet E, Pons M, Ferret P, Cioccio L D 2004 J. Cryst. Growth. 267 436
[12] Young J L, Doo J Ch, Sung S K, Hong L L, Hae D K 2004 Surface and Coatings Technology 177 415
[13] Govindhan D, Michael D, Yi C, Balaji R, Wu B, Zhang H 2006 J. Cryst. Growth 287 344
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[1] Jawedul H, Henry A, Bergman J P, Janzen E 2006 Thin solid film 515 460
[2] Jia R X, Zhang Y M, Zhang Y M 2008 Acta Phys. Sin. 57 6649 (in Chinese) [贾仁需, 张义门, 张玉明 2008 物理学报 57 6649]
[3] www.cree.com
[4] Hirokazu F, Hideki N, Masaki K 2012 Appl. Phys. Lett. 100 242102
[5] Jia R X, Zhang Y M, Zhang Y M 2012 Journal Wuhan University of Technology Materials Science Edition 27 415
[6] Jia R X, Zhang Y M, Zhang Y M 2008 Acta Phys. Sin. 57 4456 (in Chinese) [贾仁需, 张义门, 张玉明 2008 物理学报 57 4456]
[7] Bin C, Matsuhata H, Sekiguchi T, Kinoshita A, Ichinoseki K, Okumura H 2012 Appl. Phys. Lett. 100 132108
[8] Bergman J P, Lendenmann H, Nilsson P A, Lindefeit U, Skytt P 2001 Mater. Sci. Forum 299 353
[9] Lofgren P M, Ji W, Hallin C Gu C Y 2000 Electoro. Soc 147 164
[10] Veneroni A, Omarini F Moscatelli D, Maurizio M, Stefano L, Marco M, Giuseppe P, Giuseppe A 2005 J. Cryst. Growth 275 295
[11] Meziere J, Ucar M, Blanquet E, Pons M, Ferret P, Cioccio L D 2004 J. Cryst. Growth. 267 436
[12] Young J L, Doo J Ch, Sung S K, Hong L L, Hae D K 2004 Surface and Coatings Technology 177 415
[13] Govindhan D, Michael D, Yi C, Balaji R, Wu B, Zhang H 2006 J. Cryst. Growth 287 344
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