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Synthesis of nanoparticles in SiO2 by implantation of Cu and Zn ions and their thermal stability in oxygen atmoshphere

Xu Rong Jia Guang-Yi Liu Chang-Long

Synthesis of nanoparticles in SiO2 by implantation of Cu and Zn ions and their thermal stability in oxygen atmoshphere

Xu Rong, Jia Guang-Yi, Liu Chang-Long
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  • Cu nanoparticles (NPs) embedded in silica were synthesized by implantation of 45 keV Cu ions at a fluence of 1.01017 cm-2, and then subjected to post irradiation with 50 keV Zn ions at fluences of 0.51017 cm-2 and 1.01017 cm-2, respectively. Zn post ion implantation induced modifications in structures, optical absorption properties of Cu NPs as well as their thermal stability in oxygen ambient have been investigated in detail. Results clearly show that Cu-Zn alloy NPs could be formed in the Cu pre-implanted silica followed by Zn ion irradiation at a fluence of 0.51017 cm-2, which causes an unique surface plasmon resonance (SPR) absorption peak at about 516 nm. Subsequent annealing in oxygen atmosphere results in the decomposition of Cu-Zn alloy NPs, at 450 ℃, and thus, ZnO and Cu NPs appear in the substrate. Further increase of annealing temperature to 550 ℃ could transform all the Zn and Cu into ZnO and CuO. Moreover, results also demonstrate that introduction of Zn into SiO2 substrate could effectively suppress the oxidation of Cu NPs, meanwhile, the existence of Cu could promote thermal diffusion of Zn towards substrate surface, which enhances the oxidation of Zn. The underlying mechanism has been discussed.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11175129, 11175235), and the Natural Science Foundation of Tianjin, China (Grant No. 12JCZDJC26900).
    [1]

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    Inouye H, Tanaka K, Tanahashi I, Hattori T, Nakatsuka H 2000 Jpn. J. Appl. Phys. 39 5132

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    Huang Q, Zhang X D, Zhang H, Xiong S Z, Geng W D, Geng X H, Zhao Y 2010 Chin. Phys. B 19 047304

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    Stepanov A L 2010 Rev. Adv. Mater. Sci. 26 1

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    Liu X F, Jiang C Z, Ren F, Fu Q 2005 Acta Phys. Sin. 54 4633 (in Chinese)[刘向绯, 蒋昌忠, 任峰, 付强2005 物理学报54 4633]

    [7]

    Ferrando R, Jellinek J, Johnston R L 2008 Chem. Rev. 108 845

    [8]

    Peña O, Pal U, Rodríguez-Fernández L, Silva-Pereyra H G, Rodríguez-Iglesias V, Cheang-Wong J C, Arenas-Alatorre J, Oliver A 2009 J. Phys. Chem. C 113 2296

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    Mattei G, Maurizio C, Mazzoldi P, D’Acapito F, Battaglin G, Cattaruzza E, de Julián Fernández C, Sada C 2005 Phys. Rev. B 71 195418

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    Mattei G, De Marchi G, Maurizio C, Mazzoldi P, Sads C, Bello V, Battaglin G 2003 Phys. Rev. Lett. 90 085502

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    Zhang L, Jiang C Z, Ren F, Chen H B, Shi Y, Fu Q 2004 Acta Phys. Sin. 53 2910 (in Chinese)[张丽, 蒋昌忠, 任峰, 陈海波, 石瑛, 付强2004 物理学报53 2910]

    [12]

    Wang J, Zhang L H, Zhang X D, Shen Y Y, Liu C L 2013 J. Alloy. Compd. 549 231

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    Tang Q G, Meng J P, Liang J S, Nie L, Li Y X 2010 J. Alloy. Compd. 491 242

    [14]

    Xi J Y, Wang Z F, Lu G X 2002 Appl. Catal. A 225 77

    [15]

    Stepanov A L, Zhikharev V A, Hole D E, Townsend P D, Khaibullin I B 2000 Nucl. Instrum. Methods Phys. Res. B 166-167 26

    [16]

    Gnaser H, Brodyanski A, Reuscher B 2008 Surf. Interface Anal. 40 1415

    [17]

    Zhang X D, Xi J F, Shen Y Y, Zhang L H, Zhu F, Wang Z, Xue Y H, Liu C L 2011 Opt. Mater. 33 570

    [18]

    Shen Y Y, Zhang X D, Zhang D C, Xue Y H, Zhang L H, Liu C L 2011 Mater. Lett. 65 2966

    [19]

    Wang Y H, Li H Q, Lu J D, Wang R W 2011 Chin. Phys. Lett. 28 116101

    [20]

    Marshall C D, Speth J A, Payne S A 1997 J. Non-Cryst. Solids 212 59

    [21]

    Hume-Rothery W, Mabbott G W, Evans K M C 1934 Phil. Trans. R. Soc. 233 1

    [22]

    Pickering H W, Wagner C 1967 J. Electrochem. Soc. 114 698

    [23]

    Yazawa A, Gubčová A 1970 Trans. JIM 11 419

    [24]

    Amekura H, Kono K, Takeda Y, Kishimoto N 2005 Appl. Phys. Lett. 87 153105

    [25]

    Amekura H, Umeda N, Sakuma Y, Plaksin O A, Takeda Y, Kishimoto N, Buchal C 2006 Appl. Phys. Lett. 88 153119

    [26]

    Sun X F, Wei C P, Li Q Y 2009 Acta Phys. Sin. 58 5816 (in Chinese)[孙小飞, 魏长平, 李启源2009 物理学报 58 5816]

    [27]

    Volkert C A, Minor A M 2007 MRS Bull. 32 389

    [28]

    Chao L C, Lin S J, Chang W C 2010 Nucl. Instrum. Methods Phys. Res. B 268 1581

  • [1]

    Zhao C H, Zhang B P, Shang P P 2009 Chin. Phys. B 18 5539

    [2]

    Daniel M C, Astruc D 2004 Chem. Rev. 104 293

    [3]

    Inouye H, Tanaka K, Tanahashi I, Hattori T, Nakatsuka H 2000 Jpn. J. Appl. Phys. 39 5132

    [4]

    Huang Q, Zhang X D, Zhang H, Xiong S Z, Geng W D, Geng X H, Zhao Y 2010 Chin. Phys. B 19 047304

    [5]

    Stepanov A L 2010 Rev. Adv. Mater. Sci. 26 1

    [6]

    Liu X F, Jiang C Z, Ren F, Fu Q 2005 Acta Phys. Sin. 54 4633 (in Chinese)[刘向绯, 蒋昌忠, 任峰, 付强2005 物理学报54 4633]

    [7]

    Ferrando R, Jellinek J, Johnston R L 2008 Chem. Rev. 108 845

    [8]

    Peña O, Pal U, Rodríguez-Fernández L, Silva-Pereyra H G, Rodríguez-Iglesias V, Cheang-Wong J C, Arenas-Alatorre J, Oliver A 2009 J. Phys. Chem. C 113 2296

    [9]

    Mattei G, Maurizio C, Mazzoldi P, D’Acapito F, Battaglin G, Cattaruzza E, de Julián Fernández C, Sada C 2005 Phys. Rev. B 71 195418

    [10]

    Mattei G, De Marchi G, Maurizio C, Mazzoldi P, Sads C, Bello V, Battaglin G 2003 Phys. Rev. Lett. 90 085502

    [11]

    Zhang L, Jiang C Z, Ren F, Chen H B, Shi Y, Fu Q 2004 Acta Phys. Sin. 53 2910 (in Chinese)[张丽, 蒋昌忠, 任峰, 陈海波, 石瑛, 付强2004 物理学报53 2910]

    [12]

    Wang J, Zhang L H, Zhang X D, Shen Y Y, Liu C L 2013 J. Alloy. Compd. 549 231

    [13]

    Tang Q G, Meng J P, Liang J S, Nie L, Li Y X 2010 J. Alloy. Compd. 491 242

    [14]

    Xi J Y, Wang Z F, Lu G X 2002 Appl. Catal. A 225 77

    [15]

    Stepanov A L, Zhikharev V A, Hole D E, Townsend P D, Khaibullin I B 2000 Nucl. Instrum. Methods Phys. Res. B 166-167 26

    [16]

    Gnaser H, Brodyanski A, Reuscher B 2008 Surf. Interface Anal. 40 1415

    [17]

    Zhang X D, Xi J F, Shen Y Y, Zhang L H, Zhu F, Wang Z, Xue Y H, Liu C L 2011 Opt. Mater. 33 570

    [18]

    Shen Y Y, Zhang X D, Zhang D C, Xue Y H, Zhang L H, Liu C L 2011 Mater. Lett. 65 2966

    [19]

    Wang Y H, Li H Q, Lu J D, Wang R W 2011 Chin. Phys. Lett. 28 116101

    [20]

    Marshall C D, Speth J A, Payne S A 1997 J. Non-Cryst. Solids 212 59

    [21]

    Hume-Rothery W, Mabbott G W, Evans K M C 1934 Phil. Trans. R. Soc. 233 1

    [22]

    Pickering H W, Wagner C 1967 J. Electrochem. Soc. 114 698

    [23]

    Yazawa A, Gubčová A 1970 Trans. JIM 11 419

    [24]

    Amekura H, Kono K, Takeda Y, Kishimoto N 2005 Appl. Phys. Lett. 87 153105

    [25]

    Amekura H, Umeda N, Sakuma Y, Plaksin O A, Takeda Y, Kishimoto N, Buchal C 2006 Appl. Phys. Lett. 88 153119

    [26]

    Sun X F, Wei C P, Li Q Y 2009 Acta Phys. Sin. 58 5816 (in Chinese)[孙小飞, 魏长平, 李启源2009 物理学报 58 5816]

    [27]

    Volkert C A, Minor A M 2007 MRS Bull. 32 389

    [28]

    Chao L C, Lin S J, Chang W C 2010 Nucl. Instrum. Methods Phys. Res. B 268 1581

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  • Received Date:  22 November 2013
  • Accepted Date:  01 January 2014
  • Published Online:  05 April 2014

Synthesis of nanoparticles in SiO2 by implantation of Cu and Zn ions and their thermal stability in oxygen atmoshphere

  • 1. School of Science, Tianjin University, Tianjin 300072, China;
  • 2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, China;
  • 3. Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 11175129, 11175235), and the Natural Science Foundation of Tianjin, China (Grant No. 12JCZDJC26900).

Abstract: Cu nanoparticles (NPs) embedded in silica were synthesized by implantation of 45 keV Cu ions at a fluence of 1.01017 cm-2, and then subjected to post irradiation with 50 keV Zn ions at fluences of 0.51017 cm-2 and 1.01017 cm-2, respectively. Zn post ion implantation induced modifications in structures, optical absorption properties of Cu NPs as well as their thermal stability in oxygen ambient have been investigated in detail. Results clearly show that Cu-Zn alloy NPs could be formed in the Cu pre-implanted silica followed by Zn ion irradiation at a fluence of 0.51017 cm-2, which causes an unique surface plasmon resonance (SPR) absorption peak at about 516 nm. Subsequent annealing in oxygen atmosphere results in the decomposition of Cu-Zn alloy NPs, at 450 ℃, and thus, ZnO and Cu NPs appear in the substrate. Further increase of annealing temperature to 550 ℃ could transform all the Zn and Cu into ZnO and CuO. Moreover, results also demonstrate that introduction of Zn into SiO2 substrate could effectively suppress the oxidation of Cu NPs, meanwhile, the existence of Cu could promote thermal diffusion of Zn towards substrate surface, which enhances the oxidation of Zn. The underlying mechanism has been discussed.

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