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Study on lowtemperature growth of AlN single crystal film by ECRPEMOCVD

Yang Da-Zhi Qin Fu-Wen Gu Biao Xu Yin

Study on lowtemperature growth of AlN single crystal film by ECRPEMOCVD

Yang Da-Zhi, Qin Fu-Wen, Gu Biao, Xu Yin
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  • Abstract views:  2767
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  • Received Date:  13 June 2002
  • Accepted Date:  09 September 2002
  • Published Online:  20 May 2003

Study on lowtemperature growth of AlN single crystal film by ECRPEMOCVD

  • 1. (1)大连理工大学材料科学与工程系,大连 116024; (2)大连理工大学三束材料表面改性国家重点实验室,大连 116024;大连理工大学电气工程与应用电子技术系,大连 116024

Abstract: The AlN film with GaN initiallayer (GaN buffer layer and epilayer)has been grown on αAl2O3 (0001)substrate by electron cyclotron resonanceplasmaenhanced metal organic chemical vapor deposition(ECRPEMOCVD) technique at low temperatures using TMAl and high pure N2 as Al and N sources, respectively. The effects of hydrogen plasma cleaning, nitridation and GaN initallayer on the quality of AlN epilayer have been investigated by RHEED(reflection highenergy electron diffraction) , TEM(transmission electron microscope) and XRD(xray diffraction). And highquality hexagonalphase AlN single crystal films whose cleavability is the same as the substrate have been grown at low temperatures. The full width at half maximum of XRD peaks is 12′.

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