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在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻.
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关键词:
- AlGaN/GaN 结构 /
- AlN/GaN超晶格 /
- 二维电子气 /
- 高电子迁移率晶体管
[1] Piao G, Shimizu M, Okumura H 2004 Compound Semiconductors 2004, Proceeding of the 31st International Symposium on Compound Semiconductors 184 243
[2] 2000 J. Appl. Phys 87 334
[3] J. Cryst. Growth 272 420
[4] Smorchkova I P, Keller S, Heikman S, Elsass C R, Heying B, Fini P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 24 3998
[5] [6] Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M, Oda O 2004 J. Cryst. Growth 272 293
[7] Arulkumaran S, Egawa T, Ishikawa H, Jimbo T 2003 J. Vac. Sci. Technol. B 21 888
[8] Keller S, Parish G, Fini P T, Heikman S, Chen C H, Zhang N, DenBaars S P, Mishra U K, Wu Y F 1999 J. Appl. Phys. 86 5850
[9] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[10] Ridley B K, Ambacher O, Eastman L F 2000 Semicond. Sci. Technol. 15 270
[11] Smorchkova I P, Elsass C R, Lbbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S, Mishra U K 1999 J. Appl. Phys. 86 4520
[12] Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F
[13] Dimitrov R, Murphy M, Smart J, Schaff W, Shealy J R, Eastman L F, Ambacher O, Stutzmann M 2000 J. Appl. Phys. 87 3375
[14] Elass C R, Smorchkova I P, Heying B, Haus E, Poblenz C, Fini P, Maranowski K, Petroff P M, DenBaars S P, Mishra U K, Speck J S, Saxler A, Elhamri S, Mitchel W C 2000 Jpn. J. Appl. Phys. Part 39 L1023
[15] Webb J B, Tang H, Bardwell J A, Coleridge P 2001 Appl. Phys. Lett. 78 3845
[16] Yu T H, Brennan K F 2001 J. Appl. Phys. 89 3827
[17] Pophristic M, Guo S P, Peres B 2003 Appl. Phys. Lett. 82 4289
[18] Zhang J P, Wang H M, Gaevski M E, Chen C Q, Fareed Q, Yang J W, Simin G, Khan M A 2003 Appl. Phys. Lett. 80 3542
[19] Wang H M, Zhang J P, Chen C Q, Fareed Q, Yang J W, Khan M A 2002 Appl. Phys. Lett. 81 604
[20] Yamaguchi S, Kosaki M, Watanabe Y, Nitta S, Amano H, Akasaki I 2001 Appl. Phys. Lett. 79 3062
[21] Liu Z, Wang X L, Wang J X, Hu G X, Guo L C, Li J M 2007 Chin. Phys. 16 1467
[22] Kawakami Y, Shen X Q, Piao G, Shimizu M, Okumura H 2007 J. Cryst. Growth 300 168
[23] Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[24] Kondratyev A V, Talalaev R A, Lundin W V, Sakharov A V, Tsatsul’nikov A V, Zavarin E E, Fomin A V, Sizov D S 2004
[25] Jeganathan K, Ide T, Shimizu M, Okumura H 2003 J. Appl. Phys. 94 3260
-
[1] Piao G, Shimizu M, Okumura H 2004 Compound Semiconductors 2004, Proceeding of the 31st International Symposium on Compound Semiconductors 184 243
[2] 2000 J. Appl. Phys 87 334
[3] J. Cryst. Growth 272 420
[4] Smorchkova I P, Keller S, Heikman S, Elsass C R, Heying B, Fini P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 24 3998
[5] [6] Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M, Oda O 2004 J. Cryst. Growth 272 293
[7] Arulkumaran S, Egawa T, Ishikawa H, Jimbo T 2003 J. Vac. Sci. Technol. B 21 888
[8] Keller S, Parish G, Fini P T, Heikman S, Chen C H, Zhang N, DenBaars S P, Mishra U K, Wu Y F 1999 J. Appl. Phys. 86 5850
[9] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[10] Ridley B K, Ambacher O, Eastman L F 2000 Semicond. Sci. Technol. 15 270
[11] Smorchkova I P, Elsass C R, Lbbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S, Mishra U K 1999 J. Appl. Phys. 86 4520
[12] Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F
[13] Dimitrov R, Murphy M, Smart J, Schaff W, Shealy J R, Eastman L F, Ambacher O, Stutzmann M 2000 J. Appl. Phys. 87 3375
[14] Elass C R, Smorchkova I P, Heying B, Haus E, Poblenz C, Fini P, Maranowski K, Petroff P M, DenBaars S P, Mishra U K, Speck J S, Saxler A, Elhamri S, Mitchel W C 2000 Jpn. J. Appl. Phys. Part 39 L1023
[15] Webb J B, Tang H, Bardwell J A, Coleridge P 2001 Appl. Phys. Lett. 78 3845
[16] Yu T H, Brennan K F 2001 J. Appl. Phys. 89 3827
[17] Pophristic M, Guo S P, Peres B 2003 Appl. Phys. Lett. 82 4289
[18] Zhang J P, Wang H M, Gaevski M E, Chen C Q, Fareed Q, Yang J W, Simin G, Khan M A 2003 Appl. Phys. Lett. 80 3542
[19] Wang H M, Zhang J P, Chen C Q, Fareed Q, Yang J W, Khan M A 2002 Appl. Phys. Lett. 81 604
[20] Yamaguchi S, Kosaki M, Watanabe Y, Nitta S, Amano H, Akasaki I 2001 Appl. Phys. Lett. 79 3062
[21] Liu Z, Wang X L, Wang J X, Hu G X, Guo L C, Li J M 2007 Chin. Phys. 16 1467
[22] Kawakami Y, Shen X Q, Piao G, Shimizu M, Okumura H 2007 J. Cryst. Growth 300 168
[23] Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[24] Kondratyev A V, Talalaev R A, Lundin W V, Sakharov A V, Tsatsul’nikov A V, Zavarin E E, Fomin A V, Sizov D S 2004
[25] Jeganathan K, Ide T, Shimizu M, Okumura H 2003 J. Appl. Phys. 94 3260
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