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Chen Hang-Yu, Song Jian-Jun, Zhang Jie, Hu Hui-Yong, Zhang He-Ming. New experimental discovery of channel crystal plane and orientation selection for small-sized uniaxial strained Si PMOS. Acta Physica Sinica,
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2015, 64(1): 013602.
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Jing Qing-Li, Du Chun-Guang, Gao Jian-Cun. New application of surface plasmon resonance-measurement of weak magnetic field. Acta Physica Sinica,
2013, 62(3): 037302.
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Peng Hai-Bo, Wang Tie-Shan, Han Yun-Cheng, Ding Da-Jie, Xu He, Cheng Rui, Zhao Yong-Tao, Wang Yu-Yu. Study of channeling effect by impact of highly charged ions on crystal surface of Si(110). Acta Physica Sinica,
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2004, 53(8): 2429-2433.
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1996, 45(1): 107-112.
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1988, 37(11): 1888-1892.
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XU YONG-NIAN, ZHANG KAI-MING. THE GROUP Ⅶ ELEMENTS CHEMISORPTION ON Si(111) AND Ge (111) SURFACES. Acta Physica Sinica,
1984, 33(11): 1619-1623.
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1984, 33(2): 143-153.
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ZHOU JUN-MING, HUANG YI, LIN ZHANG-DA. A STEEP CHANGE IN THE TEMPERATURE DEPENDENCE OF THE STICKING COEFFICIENT OF In ATOMS ON THE Si(111)4×1-In SURFACE. Acta Physica Sinica,
1984, 33(9): 1240-1245.
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ZHOU JUN-MING. CHARGE TRANSFER AT In-Si (111) INTERFACE AND SURFACE ELECTROMIGRATION OF INDIUM ADATOMS. Acta Physica Sinica,
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1982, 31(9): 1285-1288.
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ZHANG KAI-MING, YE LING. CHLORINE CHEMISORPTION ON THE SILICON AND GERMANIUM SURFACE. Acta Physica Sinica,
1980, 29(12): 1596-1603.
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ZHANG KAI-MING, YE LING. A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMS. Acta Physica Sinica,
1980, 29(1): 122-126.
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1979, 28(3): 324-333.
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