[1] |
Chen Hang-Yu, Song Jian-Jun, Zhang Jie, Hu Hui-Yong, Zhang He-Ming. New experimental discovery of channel crystal plane and orientation selection for small-sized uniaxial strained Si PMOS. Acta Physica Sinica,
2018, 67(6): 068501.
doi: 10.7498/aps.67.20172138
|
[2] |
Chen Yong-Tao, Hong Ren-Kai, Chen Hao-Yu, Ren Guo-Wu. Experimental investigation of ejecta on melted Sn sample under shock loading. Acta Physica Sinica,
2016, 65(2): 026201.
doi: 10.7498/aps.65.026201
|
[3] |
Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica,
2015, 64(3): 038501.
doi: 10.7498/aps.64.038501
|
[4] |
Peng Hui, Li Ping, Pei Xiao-Yang, He Hong-Liang, Cheng He-Ping, Qi Mei-Lan. Experimental study of the spatial discontinuity of dynamic damage evolution. Acta Physica Sinica,
2013, 62(22): 226201.
doi: 10.7498/aps.62.226201
|
[5] |
Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan. The model of valence-band dispersion for strained Ge/Si1-xGex. Acta Physica Sinica,
2012, 61(13): 137104.
doi: 10.7498/aps.61.137104
|
[6] |
Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Xuan Rong-Xi, Hu Hui-Yong, Wang Guan-Yu. Densities of states of strained Si in different crystal systems. Acta Physica Sinica,
2011, 60(4): 047106.
doi: 10.7498/aps.60.047106
|
[7] |
Zhang Min, Ban Shi-Liang. Stark effect of donor impurity states in strained heterojunctions under pressure. Acta Physica Sinica,
2008, 57(7): 4459-4465.
doi: 10.7498/aps.57.4459
|
[8] |
Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi. Dispersion relation model of valence band in strained Si. Acta Physica Sinica,
2008, 57(11): 7228-7232.
doi: 10.7498/aps.57.7228
|
[9] |
Cai Cheng-Yu, Zhou Wang-Min. The strain distribution and equilibrium morphology of Ge/Si semiconductor quantum dot. Acta Physica Sinica,
2007, 56(8): 4841-4846.
doi: 10.7498/aps.56.4841
|
[10] |
Cheng Bu-Wen, Yao Fei, Xue Chun-Lai, Zhang Jian-Guo, Li Chuan-Bo, Mao Rong-Wei, Zuo Yu-Hua, Luo Li-Ping, Wang Qi-Ming. A method to estimate the strain state of SiGe/Si by measuring the bandgap. Acta Physica Sinica,
2005, 54(9): 4350-4353.
doi: 10.7498/aps.54.4350
|
[11] |
QU SHI-XIAN, HE DA-REN. STRANGE REPELLER INDUCED BY DYNAMICAL DISCONTINUITY. Acta Physica Sinica,
1997, 46(7): 1307-1311.
doi: 10.7498/aps.46.1307
|
[12] |
SUN JIAN-GANG, GUAN SHAN, JI XI-PING, HE DA-REN, WANG BING-HONG, QU SHI-XIAN. NEW CRISES DUE TO DYNAMICAL DISCONTINUITY. Acta Physica Sinica,
1996, 45(12): 1970-1977.
doi: 10.7498/aps.45.1970
|
[13] |
Ke San-Huang, Huang Mei-Chun, Wang Ren-Zhi. . Acta Physica Sinica,
1995, 44(7): 1129-1136.
doi: 10.7498/aps.44.1129
|
[14] |
KE SAN-HUANG, WANG REN-ZHI, HUANG MEI-CHUN. THEORETICAL STUDIES ON THE VALENCE-BAND OFFSETS AT STRAINED SEMICONDUCTOR SUPERLATTICES. Acta Physica Sinica,
1994, 43(1): 103-109.
doi: 10.7498/aps.43.103
|
[15] |
HUANG CHUN-HUI, CHEN PING, WANG XUN. PHOTOEMISSION STUDY OF VALENCE BAND DISCONTINUITY OF Si/GaP(Ⅲ)HETEROINTERFACE. Acta Physica Sinica,
1993, 42(10): 1654-1660.
doi: 10.7498/aps.42.1654
|
[16] |
KE SAN-HUANG, WANG REN-ZHI, HUANG MEI-CHUN. THE AVERAGE BOND ENERGY AND THE VALENCE-BAND EDGE OFFSET AT THE INTERFACE OF STRAINED SUPERLATTICE InAs/InP. Acta Physica Sinica,
1993, 42(9): 1510-1514.
doi: 10.7498/aps.42.1510
|
[17] |
ZHU NAN-CHANG, LI RUN-SHEN, XU SHUN-SHENG. INVESTIGATION OF THE SEMICONDUCTOR STRAINED SUPERLATTICE STRUCTURE AND INTERFACE BY X-RAY ROCKING-CURVE ANALYSIS. Acta Physica Sinica,
1991, 40(3): 433-440.
doi: 10.7498/aps.40.433
|
[18] |
WANG REN-ZHI, HUANG MEI-CHUN. A THEORETICAL CALCULATION OF VALENCE-BAND OFFSETS AT HETEROJUNCTIONS. Acta Physica Sinica,
1991, 40(10): 1683-1688.
doi: 10.7498/aps.40.1683
|
[19] |
WU CHUN-WU, YIN SHI-DUAN, ZHANG JING-PING, XIAO GUANG-MING, LIU JIA-RUI, ZHU PEI-RAN. ANOMALOUS ION CHANNELING EFFECTS IN InGaAs/GaAs STRAINED HETEROJUNCTIONS. Acta Physica Sinica,
1989, 38(1): 83-90.
doi: 10.7498/aps.38.83
|
[20] |
Lin Wei-gan. THE EQUIVALENT CIRCUIT FOR A DISCONTINUITY IN A RECTANGULAR WAVE GUIDE. Acta Physica Sinica,
1956, 12(5): 459-476.
doi: 10.7498/aps.12.459
|