THE LOCAL DENSITY OF STATES FOR THE NARROW CHANNELS OF THE SEMICONDUCTOR SURFACE

YE HONG-JUAN

doi:10.7498/aps.35.939

Abstract
In the sub-micron channels of semiconductor surface, it has been found that the conductivity has oscillation structure with gate voltage. We calculate the local density of states for the narrow channel by using Green function method and see that the density of states shows a series of sharp peaks, which can be used to explain qualitatively the conductivity oscillation.
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YE HONG-JUAN

1.
中国科学院上海技术物理研究所
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Vol. 35, Issue 7 - 1986-04-05

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THE LOCAL DENSITY OF STATES FOR THE NARROW CHANNELS OF THE SEMICONDUCTOR SURFACE

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THE LOCAL DENSITY OF STATES FOR THE NARROW CHANNELS OF THE SEMICONDUCTOR SURFACE

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