We have studied the surface relaxation of GaAs (110) with Low-Energy-Electron-Diffra-cion. We find that the best agreemet between theory and experiment is obtained for such a structure in which the As atoms are tilted outward by 0.10±0.02? and the Ga atoms are tilted inward by 0.55±0.02?, with an angle of rotation (ω) of 27.32°±0.24°, keeping the bond length at surface As-Ga unchanged and a Ga to secondlayer spcing d2= 1.45±0.01?and the second-layer Ga to third-layer spcing d3 = 2.01±0.01?. For this structure, the As back bond length lAs =2.43±0.01? (contracted 0.56%) and the Ga back bood length lGa=2.235±0.004?(contracted 8.0%)
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