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Due to negative bias temperature instability and hot carrier injection, p-type metal-oxide-semiconductor field effect transistor (MOSFET) will degrade with time, and the accumulation of interface traps is one major reason for the degradation. In this paper, the influence of the accumulation of pMOSFET interface traps on single event charge sharing collection between two adjacent pMOSFET is studied based on three-dimensional numerical simulations on a 130 nm bulk silicon complementary metal-oxide-semiconductor process, the results show that with the accumulated interface traps increasing, the charge sharing collection reducs for both the two pMOSFETs. The influence of the accumulation of pMOSFET interface traps on single event charge sharing induced multiple transient pulses between two adjacent inverters is also studied, the results show that the multiple transient pulses induced by the two pMOSFET charge sharings will be compressed, while multiple transient pulses induced by the two nMOSFET charge sharing will be broadened.
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Keywords:
- negative bias temperature instability /
- charge sharing collection /
- bipolar amplification effect /
- single event multiple transient
[1] Cao Y R, Ma X H, Hao Y, Zhang Y, Yu L, Zhu Z W, Chen H F 2007 Chin. Phys. B 16 1140
[2] [3] Cao Y R, Hao Y, Ma X H, Hu S G 2009 Chin. Phys. B 18 309
[4] [5] Cao Y R, Ma X H, Hao Y, Hu S G 2010 Chin. Phys. B 19 473
[6] Islam A E, Kufluoglu H, Varghese D, Mahapatra S, Alam M A 2007 IEEE Trans. Electron Dev. 54 2143
[7] [8] [9] Schroder D K 2007 Microelectron. Reliab. 47 841
[10] Paul B C, Kang K, Kufluoglu H, Alam M A, Roy K 2005 IEEE Electron Dev. Lett. 26 560
[11] [12] [13] Kang K, Kufluoglu H, Roy K, Alam M A 2007 IEEE Trans. Comput. Aided Des. Integr. Circ. Syst. 26 1770
[14] [15] Amusan A, Witulski A F, Massengill L, Bhuva B L, Fleming P R, Alles M L, Sternberg A L, Black J D, Schrimpf R D 2006 IEEE Trans. Nucl. Sci. 53 3253
[16] Narasimham B, Amusan O A, Bhuva B L, Schrimpf R D, Holman W T 2008 IEEE Trans. Nucl. Sci. 55 3077
[17] [18] Casey M C, Duncan A R, Bhuva B L, Robinson W H, Massengill L W 2008 IEEE Trans. Nucl. Sci. 55 3136
[19] [20] Amusan A, Casey M C, Bhuva B L, McMorrow D, Gadlage M J, Melinger J S, Massengill L W 2009 IEEE Trans. Nucl. Sci. 56 3065
[21] [22] [23] Amusan A, Massengill L W, Baze M P, Bhuva B L, Witulski A F, DasGupta S, Sternberg A L, Fleming P R, Heath C C, Alles M L 2007 IEEE Trans. Nucl. Sci. 54 2584
[24] [25] Liu B W, Chen S M, Liang B, Liu Z, Zhao Z Y 2009 IEEE Trans. Nucl. Sci. 56 2473
[26] Zhou J, Fleetwood D M, Felix J A, Gusev E P, Emic C D 2005 IEEE Trans. Nucl. Sci. 52 2231
[27] [28] [29] Silvestri M, Gerardin S, Paccagnella A 2008 IEEE Trans. Nucl. Sci. 55 3216
[30] Silvestri M, Gerardin S, Paccagnella A 2008 IEEE Trans. Nucl. Sci. 55 1960
[31] [32] Sexton F W, Schwank J R 1985 IEEE Trans. Nucl. Sci. 32 3975
[33] [34] Neamen D A 2003 Semiconductor Physics and Devices: Basic Principles (3rd ed) (Beijing: Tsinghua University Press) p393
[35] -
[1] Cao Y R, Ma X H, Hao Y, Zhang Y, Yu L, Zhu Z W, Chen H F 2007 Chin. Phys. B 16 1140
[2] [3] Cao Y R, Hao Y, Ma X H, Hu S G 2009 Chin. Phys. B 18 309
[4] [5] Cao Y R, Ma X H, Hao Y, Hu S G 2010 Chin. Phys. B 19 473
[6] Islam A E, Kufluoglu H, Varghese D, Mahapatra S, Alam M A 2007 IEEE Trans. Electron Dev. 54 2143
[7] [8] [9] Schroder D K 2007 Microelectron. Reliab. 47 841
[10] Paul B C, Kang K, Kufluoglu H, Alam M A, Roy K 2005 IEEE Electron Dev. Lett. 26 560
[11] [12] [13] Kang K, Kufluoglu H, Roy K, Alam M A 2007 IEEE Trans. Comput. Aided Des. Integr. Circ. Syst. 26 1770
[14] [15] Amusan A, Witulski A F, Massengill L, Bhuva B L, Fleming P R, Alles M L, Sternberg A L, Black J D, Schrimpf R D 2006 IEEE Trans. Nucl. Sci. 53 3253
[16] Narasimham B, Amusan O A, Bhuva B L, Schrimpf R D, Holman W T 2008 IEEE Trans. Nucl. Sci. 55 3077
[17] [18] Casey M C, Duncan A R, Bhuva B L, Robinson W H, Massengill L W 2008 IEEE Trans. Nucl. Sci. 55 3136
[19] [20] Amusan A, Casey M C, Bhuva B L, McMorrow D, Gadlage M J, Melinger J S, Massengill L W 2009 IEEE Trans. Nucl. Sci. 56 3065
[21] [22] [23] Amusan A, Massengill L W, Baze M P, Bhuva B L, Witulski A F, DasGupta S, Sternberg A L, Fleming P R, Heath C C, Alles M L 2007 IEEE Trans. Nucl. Sci. 54 2584
[24] [25] Liu B W, Chen S M, Liang B, Liu Z, Zhao Z Y 2009 IEEE Trans. Nucl. Sci. 56 2473
[26] Zhou J, Fleetwood D M, Felix J A, Gusev E P, Emic C D 2005 IEEE Trans. Nucl. Sci. 52 2231
[27] [28] [29] Silvestri M, Gerardin S, Paccagnella A 2008 IEEE Trans. Nucl. Sci. 55 3216
[30] Silvestri M, Gerardin S, Paccagnella A 2008 IEEE Trans. Nucl. Sci. 55 1960
[31] [32] Sexton F W, Schwank J R 1985 IEEE Trans. Nucl. Sci. 32 3975
[33] [34] Neamen D A 2003 Semiconductor Physics and Devices: Basic Principles (3rd ed) (Beijing: Tsinghua University Press) p393
[35]
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