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The degradation of a device can be described by the degradation model in the accelerated tests. Because the degradation is closely related to the degradation mechanism, which reflects the intrinsic physical or chemical reactions, the degradation model can be established based on the temperature effect on the reaction rate and the change of reaction volume concentration in the physical/chemical reactions. Different degradation processes can be studied using the degradation model, including both the monotonic and nonmonotonic degradation processes. Moreover, the accelerated test is carried out for the GaN LED, figuring out the parameters for the degradation model, the ratio of different degradation processes, and the time constant.
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Keywords:
- parameter degradation model /
- chemical kinetics /
- accelerated test /
- GaN LED
[1] Jiang R, Lu H, Chen D J, Ren F F,Yan D W, Zhang R, Zheng Y D 2013 Chin. Phys. B 22 047805
[2] Yan Q R, Yan Q A, Shi P P, Niu Q L, Li S T, Zhang Y 2013 Chin. Phys. B 22 026102
[3] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 物理学报 59 5002]
[4] Hu J, Du L, Zhuang Y Q, Bao J L, Zhou J 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡瑾, 杜磊, 庄奕琪, 包军林, 周江 2006 物理学报 55 1384]
[5] Meeker W Q, Escobar L A, Lu C J A 1998 Technometrics 40 89
[6] Grillot P N, Krames M R, Zhao H, Teoh S H 2006 IEEE Trans. Device Mater. Rel. 6 564
[7] Huang J S 2005 IEEE Trans. Device Mater. Rel. 5 150
[8] Geng X M, Zhang J P, Xie X Z, Zhao K R 2005 Chinese Journal of Electron Devices 28 714 (in Chinese) [耿新民, 张建平, 谢秀中, 赵科仁 2005 电子器件 28 714]
[9] Wang L, Li X Y, Jiang T M, Wan B 2009 8th International Conference on Reliability, Maintainability and Safety Chengdu, China, July 20–242009 p1313
[10] Fan J J, Yung K C, Pecht M 2012 IEEE Trans. Device Mater. Rel. 12 470
[11] Zhou Y G, Ye X R, Zhai G F 2011 Prognostics and System Health Management Conference Shenzhen, China, May 24–25 2011 p1
[12] Chen H T, Yuan H J 201 IEEE 17th International Conference on Industrial Engineering and Engineering Management Xiamen China, October 29–31, 2010 p958
[13] Deng A M, Chen X, Zhang C H, Wang Y S 2007 Acta Armamentarll 8 1002 (in Chinese) [邓爱明, 陈循, 张春华, 汪亚顺 2007 兵工学报 8 1002]
[14] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 物理学报 60 128501]
[15] Yang J F, Zhang J F, Zhang X K, Zhang X B 2011 Experiment al Technology and Management 28 26 (in Chinese) [杨景发, 张建飞, 张晓凯, 张锡冰 2011 实验技术与管理 28 62]
[16] Fons Janssen 2009 EDN China 16 46 (in Chinese) [Fons Janssen 2009 电子设计技术 16 46]
[17] Si F H 2008 Electronics & Packaging 8 12 (in Chinese) [斯芳虎 2008 电子与封装 8 12]
[18] Yang L Ma X H Feng Q, Hao Y 2008 Chin. Phys. B 17 2696
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[1] Jiang R, Lu H, Chen D J, Ren F F,Yan D W, Zhang R, Zheng Y D 2013 Chin. Phys. B 22 047805
[2] Yan Q R, Yan Q A, Shi P P, Niu Q L, Li S T, Zhang Y 2013 Chin. Phys. B 22 026102
[3] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 物理学报 59 5002]
[4] Hu J, Du L, Zhuang Y Q, Bao J L, Zhou J 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡瑾, 杜磊, 庄奕琪, 包军林, 周江 2006 物理学报 55 1384]
[5] Meeker W Q, Escobar L A, Lu C J A 1998 Technometrics 40 89
[6] Grillot P N, Krames M R, Zhao H, Teoh S H 2006 IEEE Trans. Device Mater. Rel. 6 564
[7] Huang J S 2005 IEEE Trans. Device Mater. Rel. 5 150
[8] Geng X M, Zhang J P, Xie X Z, Zhao K R 2005 Chinese Journal of Electron Devices 28 714 (in Chinese) [耿新民, 张建平, 谢秀中, 赵科仁 2005 电子器件 28 714]
[9] Wang L, Li X Y, Jiang T M, Wan B 2009 8th International Conference on Reliability, Maintainability and Safety Chengdu, China, July 20–242009 p1313
[10] Fan J J, Yung K C, Pecht M 2012 IEEE Trans. Device Mater. Rel. 12 470
[11] Zhou Y G, Ye X R, Zhai G F 2011 Prognostics and System Health Management Conference Shenzhen, China, May 24–25 2011 p1
[12] Chen H T, Yuan H J 201 IEEE 17th International Conference on Industrial Engineering and Engineering Management Xiamen China, October 29–31, 2010 p958
[13] Deng A M, Chen X, Zhang C H, Wang Y S 2007 Acta Armamentarll 8 1002 (in Chinese) [邓爱明, 陈循, 张春华, 汪亚顺 2007 兵工学报 8 1002]
[14] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 物理学报 60 128501]
[15] Yang J F, Zhang J F, Zhang X K, Zhang X B 2011 Experiment al Technology and Management 28 26 (in Chinese) [杨景发, 张建飞, 张晓凯, 张锡冰 2011 实验技术与管理 28 62]
[16] Fons Janssen 2009 EDN China 16 46 (in Chinese) [Fons Janssen 2009 电子设计技术 16 46]
[17] Si F H 2008 Electronics & Packaging 8 12 (in Chinese) [斯芳虎 2008 电子与封装 8 12]
[18] Yang L Ma X H Feng Q, Hao Y 2008 Chin. Phys. B 17 2696
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