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2020, 69(1): 018101.
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2017, 66(15): 158501.
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2017, 66(4): 047801.
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Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica,
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Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica,
2015, 64(17): 177804.
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2015, 64(10): 107801.
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2012, 61(20): 208502.
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica,
2011, 60(7): 078503.
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica,
2011, 60(9): 098107.
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica,
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Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun. Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures. Acta Physica Sinica,
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Li Jian-Jun, Yang Zhen, Han Jun, Deng Jun, Zou De-Shu, Kang Yu-Zhu, Ding Liang, Shen Guang-Di. High performance resonant cavity light emitting diodes for POF application. Acta Physica Sinica,
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 472-476.
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Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang. Noise as a representation for reliability of light emitting diode. Acta Physica Sinica,
2006, 55(3): 1384-1389.
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