| [1] |
Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue. Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2024, 73(3): 036103.
doi: 10.7498/aps.73.20221360
|
| [2] |
Cheng Ai-Qiang, Wang Shuai, Xu Zu-Yin, He Jin, Zhang Tian-Cheng, Bao Hua-Guang, Ding Da-Zhi. A large-signal scaling model of high-power GaN microwave device. Acta Physica Sinica,
2023, 72(14): 147103.
doi: 10.7498/aps.72.20230440
|
| [3] |
Bai Yu-Rong, Li Yong-Hong, Liu Fang, Liao Wen-Long, He Huan, Yang Wei-Tao, He Chao-Hui. Simulation of displacement damage in indium phosphide induced by space heavy ions. Acta Physica Sinica,
2021, 70(17): 172401.
doi: 10.7498/aps.70.20210303
|
| [4] |
Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2021, 70(21): 217301.
doi: 10.7498/aps.70.20210700
|
| [5] |
Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
doi: 10.7498/aps.69.20190640
|
| [6] |
Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao. Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica,
2019, 68(24): 248501.
doi: 10.7498/aps.68.20191311
|
| [7] |
Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor. Acta Physica Sinica,
2019, 68(24): 247203.
doi: 10.7498/aps.68.20191153
|
| [8] |
Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong. Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica,
2018, 67(17): 178501.
doi: 10.7498/aps.67.20180474
|
| [9] |
Zhang Li, Lin Zhi-Yu, Luo Jun, Wang Shu-Long, Zhang Jin-Cheng, Hao Yue, Dai Yang, Chen Da-Zheng, Guo Li-Xin. High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications. Acta Physica Sinica,
2017, 66(24): 247302.
doi: 10.7498/aps.66.247302
|
| [10] |
Wang Kai, Xing Yan-Hui, Han Jun, Zhao Kang-Kang, Guo Li-Jian, Yu Bao-Ning, Deng Xu-Guang, Fan Ya-Ming, Zhang Bao-Shun. Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices. Acta Physica Sinica,
2016, 65(1): 016802.
doi: 10.7498/aps.65.016802
|
| [11] |
Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica,
2016, 65(16): 168501.
doi: 10.7498/aps.65.168501
|
| [12] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica,
2016, 65(3): 038402.
doi: 10.7498/aps.65.038402
|
| [13] |
Li Shuang, Chang Chao, Wang Jian-Guo, Liu Yan-Sheng, Zhu Meng, Guo Le-Tian, Xie Jia-Ling. Suppression of secondary electron multipactor on dielectric surface in TM mode. Acta Physica Sinica,
2015, 64(13): 137701.
doi: 10.7498/aps.64.137701
|
| [14] |
Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2013, 62(15): 157202.
doi: 10.7498/aps.62.157202
|
| [15] |
Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
doi: 10.7498/aps.61.047301
|
| [16] |
Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei. High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica,
2010, 59(10): 7333-7337.
doi: 10.7498/aps.59.7333
|
| [17] |
Zhao You-Wen, Miao Shan-Shan, Dong Zhi-Yuan, Lü Xiao-Hong, Deng Ai-Hong, Yang Jun, Wang Bo. Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property. Acta Physica Sinica,
2007, 56(9): 5536-5541.
doi: 10.7498/aps.56.5536
|
| [18] |
Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun. Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica,
2007, 56(3): 1603-1607.
doi: 10.7498/aps.56.1603
|
| [19] |
Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min. A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica,
2006, 55(7): 3617-3621.
doi: 10.7498/aps.55.3617
|
| [20] |
Lv YONG-LIANG, ZHOU SHI-PING, XU DE-MING. ANALYSIS OF PROPERTIES OF HIGH-ELECTRON-MOBILITY-TRANSISTOR UNDER OPTICAL ILLUMI NATION. Acta Physica Sinica,
2000, 49(7): 1394-1399.
doi: 10.7498/aps.49.1394
|
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