Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas
Acta Physica Sinica
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Acta Phys. Sin  2009, Vol. 58 Issue (8): 5572-5577     doi:10.7498/aps.58.5572
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Archive| Adv Search  |   
Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas
Lu Wu1, Ren Di-Yuan1, Guo Qi1, Yu Xue-Feng1, He Cheng-Fa1, Zheng Yu-Zhan2, Wang Yi-Yuan2
(1)中国科学院新疆理化技术研究所,乌鲁木齐 830011; (2)中国科学院新疆理化技术研究所,乌鲁木齐 830011;中国科学院研究生院,北京 100049
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