Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (6): 068702    
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Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor
Gao Bo1, Cui Jiang-Wei1, Lan Bo1, Li Ming1, Wang Yi-Yuan1, Yu Xue-Feng2, Ren Di-Yuan2
(1)Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Graduate University of Chinese Academy of Sciences, Beijing 100049, China; Xinjiang Autonomous Region Key Laboratory of Electronics Information Mater; (2)Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Autonomous Region Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China
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