Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  2011, Vol. 60 Issue (7): 078503    
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search  |   
Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates
Wang Guang-Xu1, Tao Xi-Xia1, Feng Fei-Fei1, Xiong Chuan-Bing2, Liu Jun-Lin2, Zhang Meng2, Jiang Feng-Yi2
(1)Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University, Nanchang 330047, China; (2)Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University, Nanchang 330047, China;Latticepower (Jiangxi) Corporation, Nanchang 330029, China
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn