USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In<sub>0.75</sub>Ga<sub>0.25</sub>As<sub>0.58</sub>P<sub>0.42</sub>
Acta Physica Sinica
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Acta Phys. Sin.  1983, Vol. 32 Issue (9): 1220-1226    
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USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42
WANG QI-MING1, PENG HUAI-DE1, ZHU LONG-DE1, GAO JI-LIN1, BAO QING-CHENG2
(1)中国科学院半导体研究所; (2)中国科学院半导体研究所,研究生中国科学院长春物理研究所
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