-
[1] Kong Y C, Zheng Y D 2006 Prog. Phys. 26 127 (in Chinese) [孔月婵、郑有炓 2006 物理学进展 26 127]
[2] Reine M B, Hairston A, Lamarre P, Wong K K, Tobin S P, Sood A K, Cooke C, Pophristic M, Guo S, Peres B, Singh R, Eddy Jr C R, Chowdhury U, Wong M M, Dupuis R D, Li T, DenBaars S P 2006 Proc. SPIE 6119 611901
[3] Wu J, Walukiewicz W, Yu K M, Ager III J W, Haller E E, Lu H, Schaff W J, Saito Y, Nanishi Y 2002 Appl. Phys. Lett. 80 3967
[4] Jain S C, Willander M, Narayan J, Overstraeten R V 2000 J. Appl. Phys. 87 965
[5] Lei S Y, Shen B, Zhang G Y 2008 Acta Phys. Sin. 57 2386 (in Chinese)[雷双瑛、 沈 波、 张国义 2008 物理学报 57 2386]
[6] Jiang Y, Luo Y, Xi G Y, Wang L, Li H T, Zhao W, Han Y J 2009 Acta Phys. Sin. 58 7282 (in Chinese) [江 洋、 罗 毅、 席光义、 汪 莱、 李洪涛、 赵 维、 韩彦军2009 物理学报 58 7282]
[7] Rigutti L, Castaldini A, Meneghini M, Cavallini A 2008 Semicond. Sci. Tech. 23 025004
[8] Lochthofen A, Mertin W, Bacher G, Furitsch M, Brüderl G, Strauss U, Hrle V 2008 J. Phys. D: Appl. Phys. 41 135115
[9] Shen G D, Zhang J M, Zou D S, Xu C, Gu X L 2008 Acta Phys. Sin. 57 472 (in Chinese) [沈光地、 张剑铭、 邹德恕、 徐 晨、 顾晓玲2008 物理学报 57 472]
[10] Zhang J M, Zou D S, Xu C, Zhu Y X, Liang T, Da X L, Shen G D 2007 Chin. Phys. 16 1135
[11] Li Z H, Yu T J, Yang Z J, Feng Y C, Zhang G Y, Guo B P, Niu H B 2005 Chin. Phys. 14 830
[12] Hao G D, Ban S L, Jia X M 2007 Chin. Phys. 16 3766
[13] Harima H, Inoue T, Nakashima S, Okumura H, Ishida Y, Yoshida S, Koizumi T, Grille H, Bechstedt F 1999 Appl. Phys. Lett. 74 191
[14] Davydov V Y, Goncharuk I N, Smirnov A N, Nikolaev A E, Lundin W V, Usikov A S, Klochikhin A A, Aderhold J, Graul J, Semchinova O, Harima H 2002 Phys. Rev. B 65 125203
[15] Holtz M, Prokofyeva T, Seon M, Copeland K, Vanbuskirk J, Williams S, Nikishin S A, Tretyakov V, Temkin H 2001 J. Appl. Phys. 89 7977
[16] Tabata A, Leite J R, Lima A P, Silveira E, Lemos V, Frey T, As D J, Schikora D, Lischka K 1999 Appl. Phys. Lett. 75 1095
[17] Alexson D, Bergman L, Nemanich R J, Dutta M, Stroscio M A, Parker C A, Bedair S M, El-Masry N A, Adar F 2001 J. Appl. Phys. 89 798
[18] Chen Y S, Shockley W, Pearson G L 1966 Phys. Rev. 151 648
[19] Chang I F, Mitra S S 1968 Phys. Rev. 172 924
[20] Yu S G, Kim K W, Bergman L, Dutta M, Stroscio M A, Zavada J M 1998 Phys. Rev. B 58 15283
[21] Liang X X, Ban S L 2004 Chin. Phys. 13 71
[22] Martin T P 1975 Phys. Status Solidi B 67 137
[23] Grille H, Schnittler Ch, Bechstedt F 2000 Phys. Rev. B 61 6091
[24] Ban S L, Hasbun J E 1999 Eur. Phys. J. B 8 453
[25] Yu X L, Ban S L 2003 J. Inner Mongolia University (Sci. Ed.) 34 235 (in Chinese) [于晓龙、 班士良 2003 内蒙古大学学报(自然科学版) 34 235]
[26] Liaci F, Bigenwald P, Briot O, Gil B, Briot N, Cloitre T, Aulombard R L 1995 Phys. Rev. B 51 4699
[27] Osamura K, Nakajima K, Murakami Y, Shingu P H, Ohtsuki A 1972 Solid State Commun. 11 617
[28] Lee B C, Kim K W, Stroscio M A, Dutta M 1998 Phys. Rev. B 58 4860
[29] Komirenko S M, Kim K W, Stroscio M A, Dutta M 1999 Phys. Rev. B 59 5013
[30] Wendler L 1985 Phys. Status Solidi B 129 513
[31] Loudon R 1964 Adv. Phys. 13 423
[32] Lü J T, Cao J C 2005 J. Appl. Phys. 97 033502
[33] Shi J J 2003 Phys. Rev. B 68 165335
[34] Zheng R S, Matsuura M 1999 Phys. Rev. B 60 4937
[35] Zheng R S, Taguchi T, Matsuura M 2000 J. Appl. Phys. 87 2526
[36] Wei S Y, Zhang F, Huang W D, Li W, Zhao X 2006 Chinese J. Liq. Cryst. Displays 21 336 (in Chinese) [危书义、 张 芳、 黄文登、 李 伟、赵 旭 2006 液晶与显示 21 336]
[37] Wang X J, Wang L L, Huang W Q, Tang L M, Zou B S, Chen K Q 2007 Acta Phys. Sin. 56 429(in Chinese) [王新军、 王玲玲、 黄维清、 唐黎明、 邹炳锁、 陈克求 2007 物理学报 56 429]
[38] Bungaro C, Rapcewicz K, Bernholc J 2000 Phys. Rev. B 61 6720
[39] Demangeot F, Groenen J, Frandon J, Renucci M A, Briot O, Clur S, Aulombard R L 1998 Appl. Phys. Lett. 72 2674
[40] Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[41] Harima H 2002 J. Phys. : Condens. Matter 14 R967
[42] Walukiewicz W, Ager III J W, Yu K M, Liliental-Weber Z, Wu J, Li S X, Jones R E, Denlinger J D 2006 J. Phys. D: Appl. Phys. 39 R83
[43] Behr D, Niebuhr R, Wagner J, Bachem K H, Kaufmann U 1997 Gallium Nitride and Related Materials II (Pittsburgh: Materials Research Society) p213
-
[1] Kong Y C, Zheng Y D 2006 Prog. Phys. 26 127 (in Chinese) [孔月婵、郑有炓 2006 物理学进展 26 127]
[2] Reine M B, Hairston A, Lamarre P, Wong K K, Tobin S P, Sood A K, Cooke C, Pophristic M, Guo S, Peres B, Singh R, Eddy Jr C R, Chowdhury U, Wong M M, Dupuis R D, Li T, DenBaars S P 2006 Proc. SPIE 6119 611901
[3] Wu J, Walukiewicz W, Yu K M, Ager III J W, Haller E E, Lu H, Schaff W J, Saito Y, Nanishi Y 2002 Appl. Phys. Lett. 80 3967
[4] Jain S C, Willander M, Narayan J, Overstraeten R V 2000 J. Appl. Phys. 87 965
[5] Lei S Y, Shen B, Zhang G Y 2008 Acta Phys. Sin. 57 2386 (in Chinese)[雷双瑛、 沈 波、 张国义 2008 物理学报 57 2386]
[6] Jiang Y, Luo Y, Xi G Y, Wang L, Li H T, Zhao W, Han Y J 2009 Acta Phys. Sin. 58 7282 (in Chinese) [江 洋、 罗 毅、 席光义、 汪 莱、 李洪涛、 赵 维、 韩彦军2009 物理学报 58 7282]
[7] Rigutti L, Castaldini A, Meneghini M, Cavallini A 2008 Semicond. Sci. Tech. 23 025004
[8] Lochthofen A, Mertin W, Bacher G, Furitsch M, Brüderl G, Strauss U, Hrle V 2008 J. Phys. D: Appl. Phys. 41 135115
[9] Shen G D, Zhang J M, Zou D S, Xu C, Gu X L 2008 Acta Phys. Sin. 57 472 (in Chinese) [沈光地、 张剑铭、 邹德恕、 徐 晨、 顾晓玲2008 物理学报 57 472]
[10] Zhang J M, Zou D S, Xu C, Zhu Y X, Liang T, Da X L, Shen G D 2007 Chin. Phys. 16 1135
[11] Li Z H, Yu T J, Yang Z J, Feng Y C, Zhang G Y, Guo B P, Niu H B 2005 Chin. Phys. 14 830
[12] Hao G D, Ban S L, Jia X M 2007 Chin. Phys. 16 3766
[13] Harima H, Inoue T, Nakashima S, Okumura H, Ishida Y, Yoshida S, Koizumi T, Grille H, Bechstedt F 1999 Appl. Phys. Lett. 74 191
[14] Davydov V Y, Goncharuk I N, Smirnov A N, Nikolaev A E, Lundin W V, Usikov A S, Klochikhin A A, Aderhold J, Graul J, Semchinova O, Harima H 2002 Phys. Rev. B 65 125203
[15] Holtz M, Prokofyeva T, Seon M, Copeland K, Vanbuskirk J, Williams S, Nikishin S A, Tretyakov V, Temkin H 2001 J. Appl. Phys. 89 7977
[16] Tabata A, Leite J R, Lima A P, Silveira E, Lemos V, Frey T, As D J, Schikora D, Lischka K 1999 Appl. Phys. Lett. 75 1095
[17] Alexson D, Bergman L, Nemanich R J, Dutta M, Stroscio M A, Parker C A, Bedair S M, El-Masry N A, Adar F 2001 J. Appl. Phys. 89 798
[18] Chen Y S, Shockley W, Pearson G L 1966 Phys. Rev. 151 648
[19] Chang I F, Mitra S S 1968 Phys. Rev. 172 924
[20] Yu S G, Kim K W, Bergman L, Dutta M, Stroscio M A, Zavada J M 1998 Phys. Rev. B 58 15283
[21] Liang X X, Ban S L 2004 Chin. Phys. 13 71
[22] Martin T P 1975 Phys. Status Solidi B 67 137
[23] Grille H, Schnittler Ch, Bechstedt F 2000 Phys. Rev. B 61 6091
[24] Ban S L, Hasbun J E 1999 Eur. Phys. J. B 8 453
[25] Yu X L, Ban S L 2003 J. Inner Mongolia University (Sci. Ed.) 34 235 (in Chinese) [于晓龙、 班士良 2003 内蒙古大学学报(自然科学版) 34 235]
[26] Liaci F, Bigenwald P, Briot O, Gil B, Briot N, Cloitre T, Aulombard R L 1995 Phys. Rev. B 51 4699
[27] Osamura K, Nakajima K, Murakami Y, Shingu P H, Ohtsuki A 1972 Solid State Commun. 11 617
[28] Lee B C, Kim K W, Stroscio M A, Dutta M 1998 Phys. Rev. B 58 4860
[29] Komirenko S M, Kim K W, Stroscio M A, Dutta M 1999 Phys. Rev. B 59 5013
[30] Wendler L 1985 Phys. Status Solidi B 129 513
[31] Loudon R 1964 Adv. Phys. 13 423
[32] Lü J T, Cao J C 2005 J. Appl. Phys. 97 033502
[33] Shi J J 2003 Phys. Rev. B 68 165335
[34] Zheng R S, Matsuura M 1999 Phys. Rev. B 60 4937
[35] Zheng R S, Taguchi T, Matsuura M 2000 J. Appl. Phys. 87 2526
[36] Wei S Y, Zhang F, Huang W D, Li W, Zhao X 2006 Chinese J. Liq. Cryst. Displays 21 336 (in Chinese) [危书义、 张 芳、 黄文登、 李 伟、赵 旭 2006 液晶与显示 21 336]
[37] Wang X J, Wang L L, Huang W Q, Tang L M, Zou B S, Chen K Q 2007 Acta Phys. Sin. 56 429(in Chinese) [王新军、 王玲玲、 黄维清、 唐黎明、 邹炳锁、 陈克求 2007 物理学报 56 429]
[38] Bungaro C, Rapcewicz K, Bernholc J 2000 Phys. Rev. B 61 6720
[39] Demangeot F, Groenen J, Frandon J, Renucci M A, Briot O, Clur S, Aulombard R L 1998 Appl. Phys. Lett. 72 2674
[40] Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[41] Harima H 2002 J. Phys. : Condens. Matter 14 R967
[42] Walukiewicz W, Ager III J W, Yu K M, Liliental-Weber Z, Wu J, Li S X, Jones R E, Denlinger J D 2006 J. Phys. D: Appl. Phys. 39 R83
[43] Behr D, Niebuhr R, Wagner J, Bachem K H, Kaufmann U 1997 Gallium Nitride and Related Materials II (Pittsburgh: Materials Research Society) p213
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