[1] Bae S Y, Na C W, Kang J H, Park J 2005 J. Phys. Chem. B 109 2526
[2] Zhang J K, Deng S H, Jin H, Liu R L 2007 Acta Phys. Sin. 56 5371 (in Chinese) [张金奎、邓胜华、金 慧、刘悦林 2007 物理学报 56 5371]
[3] Hou Q Y, Zhao C W, Jin Y J 2009 Acta Phys. Sin. 58 7136 (in Chinese) [侯清玉、赵春旺、金永军 2009 物理学报 58 7136]
[4] Huang Y H, Zhang Y, Gu Y S, Bai X D, Qi J J, Liao Q L, Liu J 2007 J. Phys. Chem. C 111 9039
[5] Li C, Furuta M, Matsuda T, Hiramatsu T, Furuta H, Hirao T 2009 Thin Solid Films 517 3265
[6] Yamamoto T 2002 Thin Solid Films 420-421 100
[7] Huang X H, Li G H, Duan L, Li L, Dou X C, Zhang L D 2009 Scripta Materialia 60 984
[8] Wang X, Hu P, Li Y F, Yu L J 2007 J. Phys. Chem. C 111 6706
[9] Shan F K, Yu Y S 2003 Thin Solid Films 435 174
[10] Kim Y, Kang S 2009 Materials Letters 63 1065
[11] Lu J G, Fujita S 2007 Journal of Applied Physics 101 083705
[12] Kim H, Gilmore C M, Horwitz J S, Piqué A, Murata H, Kushto G P, Schlaf R, Kafafi Z H, Chrisey D B 2000 Appl. Phys. Lett. 76 259
[13] Park K C, Ma D Y, Kim K H 1997 Thin Solid Films 305 201
[14] Huang Y X, Cao Q X, Li Z M, Li G F, Wang Y P, Wei Y H 2009 Acta Phys. Sin. 58 8002 (in Chinese) [黄云霞、曹全喜、李智敏、李桂芳、王毓鹏、卫云鸽 2009 物理学报 58 8002]
[15] Zhang F C, Deng Z H, Yan J F, Yun J N 2005 Electronic Components & Materlals 24 4 (in Chinese) [张富春、邓周虎、阎军锋、允江妮、张志勇 2005 电子元件与材料 24 4]
[16] Payne M C, Teter M P, Allan D C, Arias T A, Joannopoulos J D 1992 Rev. Mod. Phys. 64 1045
[17] Sorescu M, Diamandescu L, Tarabsanu-Mihaila D, Teodorescu V S 2004 J. Mat. Sci. 39 675
[18] Zhao H F, Cao Q X, Li J T 2008 Acta Phys. Sin. 57 5828 (in Chinese) [赵慧芳、曹全喜、李建涛 2008 物理学报 57 5828]
[19] Liu E K, Zhu B S, Luo J S 1998 Semiconductor Physics (Xi'an: Xi an Jiao tong University Press) p98, 123 (in Chinese) [刘恩科、朱秉升、罗晋生 1998 半导体物理(西安:西安交通大学出版社)第98,123页]
[20] Nunes P, Fortunato E, Tonello P, Fernandes F B, Vilarinho P, Martins R 2002 Vacuum 64 281
[21] Lee K E, Wang M S, Kim E J, Hahn S H 2009 Current Applied Physics 9 683