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物理学报. 2005, 54(2): 972-976.
doi: 10.7498/aps.54.972.
激光照射下的低温氧化生成锗的纳米结构及其特性
- 收稿日期: 2004-04-14
- 修回日期: 2004-07-16
- 刊出日期: 2005-01-05
English Abstract
Optical constants of Ge nanolayers in oxidation of SiGe alloys determined by ellipsometry
- Received Date:
14 April 2004
- Accepted Date:
16 July 2004
- Published Online:
05 January 2005
Abstract: We investigate the oxidation behavior of Si1-xGex alloys ( x=0005，002，005，015 and 025). A new ellipsometric method is used f or the generating and measuring Ge nanostructures in oxidation of SiGe alloys. The fundamental optical constants of Ge nanolayers in the sample were determined by ellipsometry. The thickness and origin of the Ge bi_nanolayer were found. A new peak in photoluminescence PL spectra was discovered, which is related to the Ge bi_nanolayer (thickness: 08—14nm). Some suitable model and calculating formula can be provided with the UHFR method and quantum confinement analysis to interprete the PL spectrum and the nanostructure mechanism in the oxide.
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Keywords:
- ellipsometry /
- Ge nanostructures /
- PL spectra /
- quantum confinement
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