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物理学报. 2004, 53(4): 1211-1216.
doi: 10.7498/aps.53.1211.
锗/硅异质纳米结构中空穴存储特性研究
- 收稿日期: 2003-06-24
- 修回日期: 2003-07-22
- 刊出日期: 2004-04-15
English Abstract
Hole storage characteristics in Ge/Si hetero-nanocrystal-based memories
- Received Date:
24 June 2003
- Accepted Date:
22 July 2003
- Published Online:
15 April 2004
Abstract: Based on analysis of the physical process of hole tunneling, the time characteristics of the writing/erasing and retention in p-channel Ge/Si hetero-nanocrystal-based metal-oxide-semiconductor field-effect transistor(MOSFET) memory have been simulated numerically. Owing to the advantages of a compound potential well and a higher band offset in the valence band, the retention time is increased up to the orders of over 108 and 105, compared with the conventional Si-nanocrystal-based MOSFET memory and the n-channel Ge/Si hetero-nanocrystal-based MOSFET memory, respectively. Moreover, the present device keeps on having high-speed writing/erasing in the direct-tunneling ultrathin oxide regime. It would be expected to solve the contradictory problem between high-speed programming and long retention, therefore, the performance would be substantially improved.
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Keywords:
- Ge/Si /
- hetero-nanocrystal /
- memory /
- hole storage /
- simulation
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