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摘要: 利用低压化学气相沉积方法在以Au作催化剂的Si衬底上生长了InN纳米线. 扫描电子显微镜分析表明，这些纳米线的直径在60—100 nm的范围内, 而其长度大于1 μm.高分辨透射电子显微镜图像表明，合成的纳米线中含有六方相和立方相的InN晶体.这些InN纳米线具有良好的场发射特性和稳定的场发射电流，其开启场为10.02 V/μm(电流密度为10 μA/cm2)，在24 V/μm 的电场下，其电流密度达到5.5 mA/cm2.此外，对InN纳米线的场发射机理也进行了讨论.
Abstract: InN nanowires were prepared on Si substrates by low pressure chemical vapor deposition using Au as the catalyst. Scanning electron microscopy showed that the diameter of these nanowires is 60—100 nm, and the length is larger than 1 μm. High resolution transmission electron microscopy showed that the synthesized nanowires are a mixture of hexagonal and cubic phase. The field electron emission characteristics of these InN nanowires are good and the field emission current is stable. The turn-on electric field was 10.02 V/μm(the current density being 10 μA/cm2)，and at the high electric field of 24 V/μm，the current density was as high as to 5.5 mA/cm2. The field electron emission mechanism of these nanowires is discussed.
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