纳米金属镝的传导电子定域化

侯碧辉; 刘凤艳; 岳明; 王克军

doi:10.7498/aps.60.017201

摘要

研究不同粒径的稀土金属镝(Dy)纳米晶块体材料的电阻率随温度的变化. 电阻率包括剩余电阻率ρres=ρ(0)、磁散射电阻率ρmag(T)和声子散射电阻率ρpho(T). 样品的平均粒径分别为10,30,100和1000 nm. 实验发现磁散射电阻率ρmag(T)和声子散射电阻率ρpho

关键词:

镝金属电性 /
定域化 /
能带论 /
无序

The Changes of resistivity with temperature of bulk nanocrystalline metal dysprosium samples with different grain sizes were studied in this paper. The value of the resistivity is a sum of the residual rsistivity ρres=ρ (0), magnetic scatter resistivity ρmag(T) and phonon scatter resistivity ρpho(T). The mean grain sizes are 10 nm, 30 nm, 100 nm and 1000 nm. It was experimentally found that the magnetic scatter resistivity ρmag(T) and phonon scatter resistivity ρpho(T) increase as temperature increases. The measured values of the resistivities of the four samples are in the range of (0.8—252)×10-8Ω ·m, representing metalloid features. Experiments also showed that the residual rsistivity ρ (0) of the sample with 10nm mean grain size is about 98.6×10-8Ω ·m, which is about one order of magnitude greater than those of the other three samples. This is an experimental example of the energy band narrowing and the appearance of electron localization with the increase of disorder degree.

Keywords:

作者及机构信息

1.
北京工业大学应用数理学院,材料科学与工程学院,北京 100124

基金项目: 国家自然科学基金(批准号:50771002)资助的课题.

Authors and contacts

1.
College of Applied Science, and college of Materials Science and engineering, Beijing University of Technology, Beijing 100124, China

参考文献

[1]	Jensen J, Mackintosh A R 1991 Rare Earth Magnetism: Structure and Excitations (Oxford: Clarendon Press) p403
[2]	Chernyshov A S, Tsokol A O, Tishin A M, Gschneidner K A, Jr., Pecharsky V K 2005 Phys. Rev. B 71 184410
[3]	Darnell F J 1963 Phys. Rev. 130 1825
[4]	Hertz R, Kronmüller H 1978 J. Magn. Magn. Mater. 9 273
[5]	Vorob'ev V V, Krupotkin M Ya, Finkel V A 1985 Sov. Phys. JETP 61 1056
[6]	Izawa T, Tajima K, Yamamoto Y, Fujii M, Fujimaru O, Shinoda Y 1996 J. Phys. Soc. Jpn. 65 2640
[7]	Darnell F J, Moore E P 1963 J. Appl. Phys. 34 1337
[8]	Chernyshov A S, Mudryk Y, Pecharsky V K, Gschneidner K A Jr 2008 Phys. Rev. B 77 094132
[9]	Rhyne J J 1968 Phys. Rev. 172 523
[10]	Colvin R V, Legvold Sam, Spedding F H 1960 Phys. Rev. 120 741
[11]	Hall P M, Legvold S, Spedding F H 1960 Phys. Rev. 117 971
[12]	Boys D W and Legvold S 1968 Phys. Rev. 174 377
[13]	Behrendt DR, Legvold S, Spedding F H 1958 Phys. Rev. 109 1544
[14]	Yue M, Wang K J, Liu W Q, Zhang D T, Zhang J X 2008 Appl. Phys. Lett. 93 202501
[15]	Kittel C, 1986 Introduction to Solid State Physics 8th edition (NewYork: John Wiley & Sons) p146, 539,208
[16]	Rerbal K, Chazalviel J N, Ozanam F, Solomon I 2002 Journal of Non-Crystalline Solids 299-302 585
[17]	Ma S S, Xu H, Liu X L, Wang H Y 2007 Acta Phys. Sin. 56 2852(in Chinese) [马松山、徐惠、刘小良、王焕友 2007 物理学报 56 2852]
[18]	Zhao Y 2010 Acta Phys. Sin. 59 532(in Chinese) [赵义 2010 物理学报 59 532]
[19]	Mooij J H 1973 Phys. Stat. Sol. A17 521
[20]	Ioffe A F, Regel A R 1960 Non-Crystalline, Amorphous and Liquid Electronic Semiconductors, in Progress in Semiconductors (London: Pergamon) 4 p237

施引文献

[1]	Jensen J, Mackintosh A R 1991 Rare Earth Magnetism: Structure and Excitations (Oxford: Clarendon Press) p403
[2]	Chernyshov A S, Tsokol A O, Tishin A M, Gschneidner K A, Jr., Pecharsky V K 2005 Phys. Rev. B 71 184410
[3]	Darnell F J 1963 Phys. Rev. 130 1825
[4]	Hertz R, Kronmüller H 1978 J. Magn. Magn. Mater. 9 273
[5]	Vorob'ev V V, Krupotkin M Ya, Finkel V A 1985 Sov. Phys. JETP 61 1056
[6]	Izawa T, Tajima K, Yamamoto Y, Fujii M, Fujimaru O, Shinoda Y 1996 J. Phys. Soc. Jpn. 65 2640
[7]	Darnell F J, Moore E P 1963 J. Appl. Phys. 34 1337
[8]	Chernyshov A S, Mudryk Y, Pecharsky V K, Gschneidner K A Jr 2008 Phys. Rev. B 77 094132
[9]	Rhyne J J 1968 Phys. Rev. 172 523
[10]	Colvin R V, Legvold Sam, Spedding F H 1960 Phys. Rev. 120 741
[11]	Hall P M, Legvold S, Spedding F H 1960 Phys. Rev. 117 971
[12]	Boys D W and Legvold S 1968 Phys. Rev. 174 377
[13]	Behrendt DR, Legvold S, Spedding F H 1958 Phys. Rev. 109 1544
[14]	Yue M, Wang K J, Liu W Q, Zhang D T, Zhang J X 2008 Appl. Phys. Lett. 93 202501
[15]	Kittel C, 1986 Introduction to Solid State Physics 8th edition (NewYork: John Wiley & Sons) p146, 539,208
[16]	Rerbal K, Chazalviel J N, Ozanam F, Solomon I 2002 Journal of Non-Crystalline Solids 299-302 585
[17]	Ma S S, Xu H, Liu X L, Wang H Y 2007 Acta Phys. Sin. 56 2852(in Chinese) [马松山、徐惠、刘小良、王焕友 2007 物理学报 56 2852]
[18]	Zhao Y 2010 Acta Phys. Sin. 59 532(in Chinese) [赵义 2010 物理学报 59 532]
[19]	Mooij J H 1973 Phys. Stat. Sol. A17 521
[20]	Ioffe A F, Regel A R 1960 Non-Crystalline, Amorphous and Liquid Electronic Semiconductors, in Progress in Semiconductors (London: Pergamon) 4 p237

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