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物理学报. 1986, 35(6): 808-811.
doi: 10.7498/aps.35.808.
立方半导体中双空位态的电子结构(Ⅱ)——能级和简单的物理模型
- 收稿日期: 1985-09-23
- 刊出日期: 1986-03-05
摘要: 利用文献[1]中给出的基本方程和Vogl等人的紧束缚哈密顿量,计算了十多种立方半导体的理想双空位在禁带中引入的能级,并用了一个简单的“空位分子”模型来讨论双空位态的物理问题。
English Abstract
ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL
- Received Date:
23 September 1985
- Published Online:
05 March 1986
Abstract: The energy levels of the ideal divacancy states in band gap for more than 10 cubic semiconductors are invesgated by using the basic equations given in ref. [1] and the tight binding Hamiltonian given by vogl et al. A simple physical model is used to describe the basic physics of the divacancy problem.
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