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摘要: 利用文献[1]中给出的基本方程和Vogl等人的紧束缚哈密顿量,计算了十多种立方半导体的理想双空位在禁带中引入的能级,并用了一个简单的“空位分子”模型来讨论双空位态的物理问题。
Abstract: The energy levels of the ideal divacancy states in band gap for more than 10 cubic semiconductors are invesgated by using the basic equations given in ref. [1] and the tight binding Hamiltonian given by vogl et al. A simple physical model is used to describe the basic physics of the divacancy problem.