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本文运用场匹配法对具有任意位错的双排矩形栅慢波结构的场分布、 色散特性及耦合阻抗进行了研究. 研究结果表明, 场匹配法推导的色散特性与仿真软件CST和HFSS计算的结果完全一致, 耦合阻抗介于CST和HFSS之间. 在此基础上, 详细研究了上下两排系统之间位错对色散特性及耦合阻抗的影响. 当位错严格为半个周期时, 第一阻带消失, 第一个模式最高截止频率与第二个模式最低截止频率重叠, 发生简并; 当位错为0.45倍周期时, 在保证耦合阻抗不变的情况下, 基模的通带虽降低了2.8 GHz, 但阻带却增大了7.9 GHz, 从而可以有效避免简并及模式竞争的发生.
[1] Collin R E 1966 Foundaations for Microwave Engineering(New York: McGraw-Hill) 383-388
[2] Marshall E M, Phillips P M, Walsh J E 1988 IEEE Trans. Plasma Sci. 16 199
[3] Bugaev S P, Cherepenin V A, Kanavets V I 1990 IEEE Trans. Plasma Sci. 18 518
[4] Lin Y Y, Huang Y C 2007 Physical Review Special Topics-Accelerators and Beams 10 030701
[5] McVey B D, Basten M A, Booske J H 1994 IEEE Transactions on Microwave Theory and Techniques 42 995
[6] Mineo M, Paoloni C 2010 IEEE Trans. Electron Devices 57 1481
[7] Mineo M, Paoloni C 2010 IEEE Trans. Electron Devices 57 3169
[8] Sengele S, Jiang H, Booske J H 2009 IEEE Trans. Electron Devices 56 730
[9] Shin Y M, Barnett L R, Luhmann N C 2008 Appl. Phys. Lett. 93 6951
[10] Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Devices. 56 706
[11] Shin Y M, Barnett L R 2008 Appl. Phys. Lett. 92 091501
[12] Wang Z C, Lu D J, Wang L 2008 Journal of Electronics, Information Technology 30 2792 ( in Chinese) [王自成, 陆德坚, 王莉 2008 电子与信息学报 30 2792]
[13] Zhu Y P 1997 Radar Ecm. 4 16 (in Chinese) [朱乙平 1997 雷达与对抗 4 16]
[14] Joe J, Louis L J, Scharer J E July 1997 Phys. Plasmas 4 2707
[15] Carlsten B E, DECEMBER 2002 Physics of Plasmas 9 5088
[16] Liu S G, Li H F, Wang W X 1985 Introduction of Microwave Electronics (Beijing: National Defence Industry Press) P.104-106 [刘盛纲, 李宏福, 王文祥 1985 微波电子学导论 (北京: 国防工业出版社) 第104—106页]
[17] Zhang K Q, Li D J 2001 Electromagnetic Theory for Microwaves and Optoelectronics (The Second Edition) (Beijing: Electronic Industry Press) p398-401 (in Chinese) [张克潜, 李德杰 2001 微波与光电子学中的电磁理论 (第二版) (北京: 电子工业出版社) 第398—401页]
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[1] Collin R E 1966 Foundaations for Microwave Engineering(New York: McGraw-Hill) 383-388
[2] Marshall E M, Phillips P M, Walsh J E 1988 IEEE Trans. Plasma Sci. 16 199
[3] Bugaev S P, Cherepenin V A, Kanavets V I 1990 IEEE Trans. Plasma Sci. 18 518
[4] Lin Y Y, Huang Y C 2007 Physical Review Special Topics-Accelerators and Beams 10 030701
[5] McVey B D, Basten M A, Booske J H 1994 IEEE Transactions on Microwave Theory and Techniques 42 995
[6] Mineo M, Paoloni C 2010 IEEE Trans. Electron Devices 57 1481
[7] Mineo M, Paoloni C 2010 IEEE Trans. Electron Devices 57 3169
[8] Sengele S, Jiang H, Booske J H 2009 IEEE Trans. Electron Devices 56 730
[9] Shin Y M, Barnett L R, Luhmann N C 2008 Appl. Phys. Lett. 93 6951
[10] Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Devices. 56 706
[11] Shin Y M, Barnett L R 2008 Appl. Phys. Lett. 92 091501
[12] Wang Z C, Lu D J, Wang L 2008 Journal of Electronics, Information Technology 30 2792 ( in Chinese) [王自成, 陆德坚, 王莉 2008 电子与信息学报 30 2792]
[13] Zhu Y P 1997 Radar Ecm. 4 16 (in Chinese) [朱乙平 1997 雷达与对抗 4 16]
[14] Joe J, Louis L J, Scharer J E July 1997 Phys. Plasmas 4 2707
[15] Carlsten B E, DECEMBER 2002 Physics of Plasmas 9 5088
[16] Liu S G, Li H F, Wang W X 1985 Introduction of Microwave Electronics (Beijing: National Defence Industry Press) P.104-106 [刘盛纲, 李宏福, 王文祥 1985 微波电子学导论 (北京: 国防工业出版社) 第104—106页]
[17] Zhang K Q, Li D J 2001 Electromagnetic Theory for Microwaves and Optoelectronics (The Second Edition) (Beijing: Electronic Industry Press) p398-401 (in Chinese) [张克潜, 李德杰 2001 微波与光电子学中的电磁理论 (第二版) (北京: 电子工业出版社) 第398—401页]
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