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液晶与垂直腔面发射半导体激光器(VCSELs)阵列结合可实现波长可调谐、偏振精确控制等, 同时液晶的引入也会改变垂直腔面发射半导体激光器阵列的热特性, 本文设计了表面液晶-垂直腔面发射激光器阵列结构, 并开展了阵列的热特性实验研究. 对比分析了向列相液晶层对VCSEL阵列热特性的影响, 实验结果表明, 1 × 1, 2 × 2, 3 × 3三种表面液晶-VCSEL阵列的阈值电流温度变化率最高可降低23.6%, 热阻降低26.75%; 同时, 激光器阵列各发光单元之间的温度均匀性显著提高, 出光孔与周围温差小于0.5 ℃. 综上所述, VCSEL阵列中液晶层的引入不仅大大加速激光器阵列单元热量扩散, 而且降低了有源区结温, 提高了VCSELs激光器阵列热特性, 为实现高光束质量的单偏振波长可控VCSEL激光器阵列打下了良好的理论和实验基础.In recent years, with the increase of information processing capacity of optical networks and the continuous improvement of high-density optical communication technology, the requirements for the performance of light sources are also increased. High-quality VCSEL with beam polarization stability control plays an increasingly important role in the above fields. The combination of liquid crystal and vertical cavity surface emitting laser (VCSEL) array can realize wavelength tunability and precise polarization control. At the same time, the introduction of liquid crystal will also change the thermal characteristics of VCSEL array. In this paper, the structure of VCSEL array is designed and the experimental research on the thermal characteristics of VCSEL array is carried out. The effects of nematic liquid crystal layer on the thermal characteristics of VCSEL array are compared and analyzed. The experimental results show that the threshold current temperature change rate of 1 × 1, 2 × 2 and 3 × 3 surface liquid crystal VCSEL array can be reduced by 23.6% and the thermal resistance can be reduced by 26.75%. Moreover, the saturated optical power of VCSEL array can be improved to a different degree. Meanwhile, the liquid crystal layer can effectively increase the heat transverse conduction and reduce the optical hole. The temperature difference between the light outlet and the table makes the heat conduction time very short at a small distance between the light outlet and the table, which is more conducive to the uniform temperature distribution of the laser array. The experimental results show that the temperature difference between the light outlet and the surrounding is less than 0.5 ℃. To sum up, the introduction of liquid crystal layer into VCSEL array not only greatly accelerates the thermal diffusion of laser array unit, but also reduces the junction temperature of active region, improves the thermal characteristics of VCSELs laser array, and lays a good theoretical and experimental foundation for realizing the high beam quality single polarization wavelength controllable VCSEL laser array.
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Jang J P 2000 Semiconductor Laser (Beijing: Electronic Industry Press) p86 (in Chinese)
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图 1 表面液晶-VCSEL阵列结构示意图 (a)横截面图; (b)俯视图
Fig. 1. Structure of independent addressable surface liquid crystal VCSEL array: (a) Cross section; (b) top view.
图 2 引入液晶前后各阵列的特征温度和阈值电流温度漂移率
Fig. 2. Characteristic temperature and threshold current temperature drift rate of each array before and after introducing liquid crystal (LC).
图 3 不同温度下各阵列斜率效率 (a)无液晶; (b)有液晶
Fig. 3. Slope efficiency of each array at different temperatures: (a) Without liquid crystal; (b) with liquid crystal.
图 4 引入液晶前后不同温度下三种阵列的脉冲电流P-I曲线及室温时饱和光功率光谱图 (a), (d), (g) 1 × 1; (b), (e), (h) 2 × 2; (c), (f), (i) 3 × 3
Fig. 4. The P-I curves of each array at different temperatures before and after coating with LC and spectra at saturated optical power at room temperture (a), (d), (g) 1 × 1; (b), (e), (h) 2 × 2; (c), (f), (i) 3 × 3
图 5 引入液晶前后各阵列热阻比较
Fig. 5. Thermal resistance of each array before and after coating with LC.
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[1] Larsson A 2011 IEEE J. Sel. Top. Quantum 17 1552
Google Scholar
[2] Soda H, Iga K, Kitahara C, Suematsu Y 1979 Jpn. J. Appl. Phys. 18 2329
Google Scholar
[3] Iga K, Kinoshita S, Koyama F 1987 Electron. Lett. 23 134
Google Scholar
[4] Moench H, Kolb J S, Engelhardt A P, Gerlach P, Jaeger R, Pollmann-Retsch J, Weichmann U, Witzigmann B 2014 Conference on Vertical-Cavity Surface-Emitting Lasers XVIII, San Francisco, CA, USA, February 5–6, 2014 p9001
[5] Zhang J W, Ning Y Q, Zhang X 2014 Jpn. J. Appl. Phys. 53 070303
Google Scholar
[6] Zhang L S, Ning Y Q , Zeng Y G, Qin L, Liu Y, Zhang X, Liu D, Xu H W, Zhang J S, Wang L J 2011 Appl. Phys. Express 4 052102
[7] [8] [9] Fan L, Wu M C, Lee H C, Grodziński P 1994 Electron. Lett. 30 1409
Google Scholar
[10] Castany O, Dupont L, Shuaib A, Gauthier J P, Levallois C, Paranthoën C 2011 Appl. Phys. Lett. 98 161105
Google Scholar
[11] Pan G Z, Xu C, Xie Y Y, Dong Y B, Wang Q H, Deng J, Sun J, Chen H D 2019 Opt. Express 27 13910
Google Scholar
[12] Frasunkiewicz L, Czyszanowski T, Thienpont H, Panajotov K 2018 Opt. Commun. 427 271
Google Scholar
[13] Panajotoy K, Xie Y, Dems M 2013 Laser Phys. Lett. 10 105003
Google Scholar
[14] Panaiotoy K, Dems M, Belmonte C 2014 J. Lightwave Technol. 32 20
Google Scholar
[15] Yi X, Jeroen B, Krassimir P, Panaiotoy K, Neyts K 2014 Opt. Lett. 39 6494
[16] 王强, 关宝璐, 刘克, 史国柱, 刘欣, 崔碧峰, 韩军, 李建军, 徐晨 2013 物理学报 62 234602
Google Scholar
Wang Q, Guan B L, Liu K, Shi G Z, Liu X, Cui B F, Han J, Li J J, Xu C 2013 Acta Phys. Sin. 62 234602
Google Scholar
[17] Lott J A, Schneider R P, Choquette K D, Kilcoyne S P, Figiel J J 1993 Electron. Lett. 29 1693
Google Scholar
[18] 刘春玲 2004 博士学位论文 (长春: 长春理工大学)
Liu C L 2004 Ph. D. Dissertation (Changchun: Changchun University of Technology) (in Chinese)
[19] 张永明, 钟景昌, 路国光, 秦莉, 赵英杰, 郝永芹, 姜晓光 2006 光子学报 35 9
Zhang Y M, Zhong J C, Lu G G, Qin L, Zhao Y J, Hao Y Q, Jiang X G 2006 Acta Photon Sin. 35 9
[20] Ahlers G, Cannell D S, Berge L I, Sakurai S 1994 Phys. Rev. E 49 545
Google Scholar
[21] 马宽明, 刘梓轩, 刘培元, 李杰, 武创, 关柏鸥 2019 激光与光电子学进展 56 170621
Google Scholar
Ma K M, Liu X X, Liu P Y, Li J, Wu C, Guan B O 2019 Laser Optoelect. Prog. 56 170621
Google Scholar
[22] 江剑平 2000 半导体激光器 (北京: 电子工业出版社) 第86页
Jang J P 2000 Semiconductor Laser (Beijing: Electronic Industry Press) p86 (in Chinese)
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