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空间高能离子在纳米级SOI SRAM中引起的单粒子翻转特性及物理机理研究

张战刚 雷志锋 岳龙 刘远 何玉娟 彭超 师谦 黄云 恩云飞

空间高能离子在纳米级SOI SRAM中引起的单粒子翻转特性及物理机理研究

张战刚, 雷志锋, 岳龙, 刘远, 何玉娟, 彭超, 师谦, 黄云, 恩云飞
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  • 基于蒙特卡罗方法研究空间高能离子在65–32 nm绝缘体上硅静态随机存取存储器(SOI SRAM)中产生的灵敏区沉积能量谱、单粒子翻转截面和空间错误率特性及内在的物理机理.结果表明:单核能为200 MeV/n的空间离子在60–40 nm厚的灵敏区中产生的能损歧离导致纳米级SOI SRAM在亚线性能量转移阈值区域出现单粒子翻转;宽的二次电子分布导致灵敏区仅能部分收集单个高能离子径迹中的电子-空穴对,致使灵敏区最大和平均沉积能量各下降25%和33.3%,进而引起单粒子翻转概率降低,以及在轨错误率下降约80%.发现俘获带质子直接电离作用导致65 nm SOI SRAM的在轨错误率增大一到两个数量级.
      通信作者: 张战刚, zhangangzhang@163.com
    • 基金项目: 国家自然科学基金(批准号:11505033)、广东省省级科技计划(批准号:2015B090901048,2017B090901068,2015B090912002)和广州市科技计划(批准号:201707010186)资助的课题.
    [1]

    Dodd P E, Shaneyfelt M R, Schwank J R, Felix J A 2010 IEEE Trans. Nucl. Sci. 57 1747

    [2]

    Weller R A, Mendenhall M H, Reed R A, Schrimpf R D, Warren K M, Sierawski B D, Massengill L W 2010 IEEE Trans. Nucl. Sci. 57 1726

    [3]

    Reed R A, Weller R A, Schrimpf R D, Mendenhall M H, Warren K M, Massengill L W 2006 IEEE Trans. Nucl. Sci. 53 3356

    [4]

    Warren K M, Weller R A, Mendenhall M H, Reed R A, Ball D R, Howe C L, Olson B D, Alles M L, Massengill L W, Schrimpf R D, Haddad N F, Doyle S E, McMorrow D, Melinger J S, Lotshaw W T 2005 IEEE Trans. Nucl. Sci. 52 2125

    [5]

    Dodd P E, Schwank J R, Shaneyfelt M R, Ferlet-Cavrois V, Paillet P, Baggio J, Hash G L, Felix J A, Hirose K, Saito H 2007 IEEE Trans. Nucl. Sci. 54 889

    [6]

    Dodd P E, Schwank J R, Shaneyfelt M R, Felix J A, Paillet P, Ferlet-Cavrois V, Baggio J, Reed R A, Warren K M, Weller R A, Schrimpf R D, Hash G L, Dalton S M, Hirose K, Saito H 2007 IEEE Trans. Nucl. Sci. 54 2303

    [7]

    Ecoffet R, Duzellier S, Falguere D, Guibert L, Inguimbert C 1997 IEEE Trans. Nucl. Sci. 44 2230

    [8]

    Koga R, Crain S H, Crain W R, Crawford K B, Hansel S J 1998 IEEE Trans. Nucl. Sci. 45 2475

    [9]

    Liu M S, Liu H Y, Brewster N, Nelson D, Golke K W, Kirchner G, Hughes H L, Campbell A, Ziegler J F 2006 IEEE Trans. Nucl. Sci. 53 3487

    [10]

    Xapsos M A 1992 IEEE Trans. Nucl. Sci. 39 1613

    [11]

    Dodd P E, Musseau O, Shaneyfelt M R, Sexton F W, D'hose C, Hash G L, Martinez M, Loemker R A, Leray J L, Winokur P S 1998 IEEE Trans. Nucl. Sci. 45 2483

    [12]

    Reed R A, Weller R A, Mendenhall M H, Lauenstein J M, Warren K M, Pellish J A, Schrimpf R D, Sierawski B D, Massengill L W, Dodd P E, Shaneyfelt M R, Felix J A, Schwank J R, Haddad N F, Lawrence R K, Bowman J H, Conde R 2007 IEEE Trans. Nucl. Sci. 54 2312

    [13]

    Raine M, Gaillardin M, Sauvestre J E, Flament O, Bournel A, Aubry-Fortuna V 2010 IEEE Trans. Nucl. Sci. 57 1892

    [14]

    Zhang Z G, Liu J, Hou M D, Sun Y M, Zhao F Z Liu G, Han Z S, Geng C, Liu J D, Xi K, Duan J L, Yao H J, Mo D, Luo J, Gu S, Liu T Q 2013 Chin. Phys. B 22 096103

    [15]

    Raine M, Gaillardin M, Paillet P, Duhamel O, Girard S, Bournel A 2011 IEEE Trans. Nucl. Sci. 58 2664

    [16]

    Zhang Z G, Lei Z F, En Y F, Liu J 2016 Radiation Effects on Components & Systems Conference (RADECS) Bremen, Germany, September 19-23, 2016 pp1-4

    [17]

    Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522

    [18]

    Heidel D F, Marshall P W, LaBel K A, Schwank J R, Rodbell K P, Hakey M C, Berg M D, Dodd P E, Friendlich M R, Phan A D, Seidleck C M, Shaneyfelt M R, Xapsos M A 2008 IEEE Trans. Nucl. Sci. 55 3394

    [19]

    Fenouillet-Beranger C, Perreau P, Pham-Nguyen L, Denorme S, Andrieu F, Tosti L, Brevard L, Weber O, Barnola S, Salvetat T, Garros X, Casse M, Cassé M, Leroux C, Noel J P, Thomas O, Le-Gratiet B, Baron F, Gatefait M, Campidelli Y, Abbate F, Perrot C, de-Buttet C, Beneyton R, Pinzelli L, Leverd F, Gouraud P, Gros-Jean M, Bajolet A, Mezzomo C, Leyris C, Haendler S, Noblet D, Pantel R, Margain A, Borowiak C, Josse E, Planes N, Delprat D, Boedt F, Bourdelle K, Nguyen B Y, Boeuf F, Faynot O, Skotnicki T 2009 IEEE International Electron Devices Meeting (IEDM) Baltimore, USA, December 7-9, 2009 p1

    [20]

    Adams J H, Barghouty A F, Mendenhall M H, Reed R A, Sierawski B D, Warren K M, Watts J W, Weller R A 2012 IEEE Trans. Nucl. Sci. 59 3141

    [21]

    Tylka A J, Adams J H, Boberg P R, Brownstein B, Dietrich W F, Flueckiger E O, Petersen E L, Shea M A, Smart D F, Smith E C 1997 IEEE Trans. Nucl. Sci. 44 2150

    [22]

    Ziegler J F, Biersack J P, Littmark U 1985 The Stopping and Range of Ions in Solids (New York: Pergamon Press)

    [23]

    Pavlovic M, Strasik I 2007 Nucl. Instrum. Meth. Phys. Res. B 257 601

    [24]

    Raine M, Hubert G, Gaillardin M, Artola L, Paillet P, Girard S, Sauvestre J, Bournel A 2011 IEEE Trans. Nucl. Sci. 58 840

  • [1]

    Dodd P E, Shaneyfelt M R, Schwank J R, Felix J A 2010 IEEE Trans. Nucl. Sci. 57 1747

    [2]

    Weller R A, Mendenhall M H, Reed R A, Schrimpf R D, Warren K M, Sierawski B D, Massengill L W 2010 IEEE Trans. Nucl. Sci. 57 1726

    [3]

    Reed R A, Weller R A, Schrimpf R D, Mendenhall M H, Warren K M, Massengill L W 2006 IEEE Trans. Nucl. Sci. 53 3356

    [4]

    Warren K M, Weller R A, Mendenhall M H, Reed R A, Ball D R, Howe C L, Olson B D, Alles M L, Massengill L W, Schrimpf R D, Haddad N F, Doyle S E, McMorrow D, Melinger J S, Lotshaw W T 2005 IEEE Trans. Nucl. Sci. 52 2125

    [5]

    Dodd P E, Schwank J R, Shaneyfelt M R, Ferlet-Cavrois V, Paillet P, Baggio J, Hash G L, Felix J A, Hirose K, Saito H 2007 IEEE Trans. Nucl. Sci. 54 889

    [6]

    Dodd P E, Schwank J R, Shaneyfelt M R, Felix J A, Paillet P, Ferlet-Cavrois V, Baggio J, Reed R A, Warren K M, Weller R A, Schrimpf R D, Hash G L, Dalton S M, Hirose K, Saito H 2007 IEEE Trans. Nucl. Sci. 54 2303

    [7]

    Ecoffet R, Duzellier S, Falguere D, Guibert L, Inguimbert C 1997 IEEE Trans. Nucl. Sci. 44 2230

    [8]

    Koga R, Crain S H, Crain W R, Crawford K B, Hansel S J 1998 IEEE Trans. Nucl. Sci. 45 2475

    [9]

    Liu M S, Liu H Y, Brewster N, Nelson D, Golke K W, Kirchner G, Hughes H L, Campbell A, Ziegler J F 2006 IEEE Trans. Nucl. Sci. 53 3487

    [10]

    Xapsos M A 1992 IEEE Trans. Nucl. Sci. 39 1613

    [11]

    Dodd P E, Musseau O, Shaneyfelt M R, Sexton F W, D'hose C, Hash G L, Martinez M, Loemker R A, Leray J L, Winokur P S 1998 IEEE Trans. Nucl. Sci. 45 2483

    [12]

    Reed R A, Weller R A, Mendenhall M H, Lauenstein J M, Warren K M, Pellish J A, Schrimpf R D, Sierawski B D, Massengill L W, Dodd P E, Shaneyfelt M R, Felix J A, Schwank J R, Haddad N F, Lawrence R K, Bowman J H, Conde R 2007 IEEE Trans. Nucl. Sci. 54 2312

    [13]

    Raine M, Gaillardin M, Sauvestre J E, Flament O, Bournel A, Aubry-Fortuna V 2010 IEEE Trans. Nucl. Sci. 57 1892

    [14]

    Zhang Z G, Liu J, Hou M D, Sun Y M, Zhao F Z Liu G, Han Z S, Geng C, Liu J D, Xi K, Duan J L, Yao H J, Mo D, Luo J, Gu S, Liu T Q 2013 Chin. Phys. B 22 096103

    [15]

    Raine M, Gaillardin M, Paillet P, Duhamel O, Girard S, Bournel A 2011 IEEE Trans. Nucl. Sci. 58 2664

    [16]

    Zhang Z G, Lei Z F, En Y F, Liu J 2016 Radiation Effects on Components & Systems Conference (RADECS) Bremen, Germany, September 19-23, 2016 pp1-4

    [17]

    Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522

    [18]

    Heidel D F, Marshall P W, LaBel K A, Schwank J R, Rodbell K P, Hakey M C, Berg M D, Dodd P E, Friendlich M R, Phan A D, Seidleck C M, Shaneyfelt M R, Xapsos M A 2008 IEEE Trans. Nucl. Sci. 55 3394

    [19]

    Fenouillet-Beranger C, Perreau P, Pham-Nguyen L, Denorme S, Andrieu F, Tosti L, Brevard L, Weber O, Barnola S, Salvetat T, Garros X, Casse M, Cassé M, Leroux C, Noel J P, Thomas O, Le-Gratiet B, Baron F, Gatefait M, Campidelli Y, Abbate F, Perrot C, de-Buttet C, Beneyton R, Pinzelli L, Leverd F, Gouraud P, Gros-Jean M, Bajolet A, Mezzomo C, Leyris C, Haendler S, Noblet D, Pantel R, Margain A, Borowiak C, Josse E, Planes N, Delprat D, Boedt F, Bourdelle K, Nguyen B Y, Boeuf F, Faynot O, Skotnicki T 2009 IEEE International Electron Devices Meeting (IEDM) Baltimore, USA, December 7-9, 2009 p1

    [20]

    Adams J H, Barghouty A F, Mendenhall M H, Reed R A, Sierawski B D, Warren K M, Watts J W, Weller R A 2012 IEEE Trans. Nucl. Sci. 59 3141

    [21]

    Tylka A J, Adams J H, Boberg P R, Brownstein B, Dietrich W F, Flueckiger E O, Petersen E L, Shea M A, Smart D F, Smith E C 1997 IEEE Trans. Nucl. Sci. 44 2150

    [22]

    Ziegler J F, Biersack J P, Littmark U 1985 The Stopping and Range of Ions in Solids (New York: Pergamon Press)

    [23]

    Pavlovic M, Strasik I 2007 Nucl. Instrum. Meth. Phys. Res. B 257 601

    [24]

    Raine M, Hubert G, Gaillardin M, Artola L, Paillet P, Girard S, Sauvestre J, Bournel A 2011 IEEE Trans. Nucl. Sci. 58 840

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出版历程
  • 收稿日期:  2017-07-01
  • 修回日期:  2017-08-29
  • 刊出日期:  2017-12-05

空间高能离子在纳米级SOI SRAM中引起的单粒子翻转特性及物理机理研究

  • 1. 电子元器件可靠性物理及其应用技术重点实验室, 工业和信息化部电子第五研究所, 广州 510610
  • 通信作者: 张战刚, zhangangzhang@163.com
    基金项目: 

    国家自然科学基金(批准号:11505033)、广东省省级科技计划(批准号:2015B090901048,2017B090901068,2015B090912002)和广州市科技计划(批准号:201707010186)资助的课题.

摘要: 基于蒙特卡罗方法研究空间高能离子在65–32 nm绝缘体上硅静态随机存取存储器(SOI SRAM)中产生的灵敏区沉积能量谱、单粒子翻转截面和空间错误率特性及内在的物理机理.结果表明:单核能为200 MeV/n的空间离子在60–40 nm厚的灵敏区中产生的能损歧离导致纳米级SOI SRAM在亚线性能量转移阈值区域出现单粒子翻转;宽的二次电子分布导致灵敏区仅能部分收集单个高能离子径迹中的电子-空穴对,致使灵敏区最大和平均沉积能量各下降25%和33.3%,进而引起单粒子翻转概率降低,以及在轨错误率下降约80%.发现俘获带质子直接电离作用导致65 nm SOI SRAM的在轨错误率增大一到两个数量级.

English Abstract

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