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基于中国散裂中子源的商用静态随机存取存储器中子单粒子效应实验研究

王勋 张凤祁 陈伟 郭晓强 丁李利 罗尹虹

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基于中国散裂中子源的商用静态随机存取存储器中子单粒子效应实验研究

王勋, 张凤祁, 陈伟, 郭晓强, 丁李利, 罗尹虹

Experimental study on neutron single event effects of commercial SRAMs based on CSNS

Wang Xun, Zhang Feng-Qi, Chen Wei, Guo Xiao-Qiang, Ding Li-Li, Luo Yin-Hong
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  • 利用中国散裂中子源反角白光中子束线开展13款商用静态随机存取存储器的中子单粒子效应实验. 研究了测试图形、特征尺寸和版图工艺差异对单粒子效应的影响. 结果表明测试图形对器件的单粒子翻转截面影响不大, 但对部分器件的多单元翻转占比有较大的影响; 特征尺寸对器件单粒子翻转截面的影响没有明显的规律, 但对多单元翻转的影响规律明显, 多单元翻转占比和最大位数都随着特征尺寸的降低而增大; 器件版图工艺差异对器件的单粒子翻转截面和多单元翻转占比都有较大的影响. 此外, 通过与高原辐照实验结果对比, 发现在反角白光中子源获得的多单元翻转占比小于高原辐照实验的结果, 其原因是反角白光中子源实验中, 中子的最高能量和高能成分占比偏小, 且中子束流只有垂直入射. 因此, 利用反角白光中子源评估器件的大气中子单粒子效应时可能会低估多单元翻转情况. 本文的结果可为研究者利用反角白光中子源开展相关研究提供参考.
    The experiment of neutron single event effect was carried out at China Spallation Neutron Source (CSNS) back-n on 13 kinds of commercial SRAM. The single event upset (SEU) cross section of each device was obtained, and multiple cell upsets (MCU) were extracted from the SEUs using a statistical method without layout information. The influences of the test pattern, feature size and device layout on the SEU cross section and MCU were studied. The results show that the test pattern has little influence on the SEU cross section of the devices, but has a great influence on the MCU ratio of some devices. The feature size has influence both on the SEU cross section and the MCU ratio of the devices. The influence on SEU cross section is not definite. The influence on the MCU ratio is definite. Both the ratio and the maximum size of the MCUs increase with the decrease of the feature size. The difference of layout has great influence both on the SEU cross section and the MCU ratio of the device. In addition, compared with the results of plateau irradiation, the ratio of MCU in CSNS back-n is less than that of plateau irradiation. There are two reasons for this difference. One is that the energy spectrum of CSNS back-n is softer than that of the atmospheric neutron. The other is the neutron beam at CSNS back-n is perpendicular to the device under test. Therefore, evaluating the atmospheric neutron SEE using CSNS back-n line may underestimate the MCU ratio of the device under test. The experimental data, analytical methods and results obtained in this paper are valuable for the researchers to carry out the atmospheric neutron SEE test and the evaluation of devices on atmospheric neutron SEE.
      通信作者: 王勋, wangxun@nint.ac.cn
      Corresponding author: Wang Xun, wangxun@nint.ac.cn
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    Weulersse C, Guibbaud N, Beltrando A L, Galinat J, Beltrando C, Miller F, Trochet P, Alexandrescu D 2017 IEEE Trans. Nucl. Sci. 64 2268

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    郭晓强, 郭红霞, 王桂珍, 林东生, 陈伟, 白小燕, 杨善潮, 刘岩 2009 强激光与粒子束 21 1547

    Guo X Q, Guo H X, Wang G Z, Ling D S, Chen W, Bai X Y, Yang S C, Liu Y 2009 High Power Laser Particle Beams 21 1547

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    Yang W, Li Y, Li Y, Hu Z, Xie F, He C, Wang S, Zhou B, He H, Khan W, Liang T 2019 Microelectron. Reliab. 99 119Google Scholar

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    胡志良, 杨卫涛, 李永宏, 李洋, 贺朝会, 王松林, 周斌, 于全芝, 何欢, 谢飞, 白雨蓉, 梁天骄 2019 物理学报 68 238502Google Scholar

    Hu Z L, Yang W T, Li Y H, Li Y, He C H, Wang S L, Zhou B, Yu Q Z, He H, Xie F, Bai Y R, Liang T J 2019 Acta Phys. Sin. 68 238502Google Scholar

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    JEDEC, Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices: JESD89 A, JEDEC STANDARD, vol.89, JEDEC Solid State Technology Association

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    Ni W, Jing H, Zhang L, Ou L 2018 Radiat. Phys. Chem. 152 43Google Scholar

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    鲍杰, 陈永浩, 张显鹏, 等 2019 物理学报 68 080101Google Scholar

    Bao J, Chen Y H, Zhang X P, et al. 2019 Acta Phys. Sin. 68 080101Google Scholar

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    [22]

    Lilja K, Bounasser M, Wen S J, et al. 2013 IEEE Trans. Nucl. Sci. 60 2782Google Scholar

    [23]

    He Y, Chen S, Chen J, Chi Y, Liang B, Liu B, Qin J, Du Y, Huang P 2012 IEEE Trans. Nucl. Sci. 59 2772Google Scholar

    [24]

    Atkinson N M, Witulski A F, Holman W T, et al. 2011 IEEE Trans. Nucl. Sci. 58 885Google Scholar

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    Wang X, Ding L, Luo Y, Chen W, Zhang F, Guo X 2020 IEEE Trans. Nucl. Sci. 67 1443Google Scholar

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    王勋, 罗尹虹, 丁李利, 张凤祁, 陈伟, 郭晓强, 王坦 2020 原子能科学技术Google Scholar

    Wang X, Luo Y H, Ding L L, Zhang F Q, Chen W, Guo X Q, Wang T 2020 Atom. Energy Sci. Technol.Google Scholar

    [27]

    Radaelli D, Puchner H, Wong S, Daniel S 2005 IEEE Trans. Nucl. Sci. 52 2433Google Scholar

    [28]

    Yasuo Y, Hironaru Y, Eishi I, Hideaki K, Masatoshi S, Takashi A, Shigehisa Y 2007 IEEE Trans. Nucl. Sci. 54 1030Google Scholar

    [29]

    Zhang Z G, Liu J, Hou M D, et al. 2013 Chin. Phys. B 22 086102Google Scholar

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    Ikeda N, Kuboyama S, Matsuda S, Handa T 2005 IEEE Trans. Nucl. Sci. 52 2200Google Scholar

  • 图 1  CSNS反角白光中子源实验终端布局[19]

    Fig. 1.  Layout of back-n at CSNS[19].

    图 2  CSNS反角白光中子源终端2与羊八井大气中子微分能谱对比

    Fig. 2.  Comparison between the differential neutron energy spectra of CSNS back-n and Yangbajing.

    图 3  CSNS反角白光中子源辐照实验布局示意图

    Fig. 3.  Layout of the irradiation experiment at CSNS back-n

    图 4  不同测试图形下测得的器件SEU截面对比

    Fig. 4.  Comparison between the SEE cross sections of devices with different test patterns.

    图 5  不同厂商相同特征尺寸SRAM器件SEU截面对比 (a) 350 nm SRAM; (b) 130 nm SRAM; (c) 65 nm SRAM

    Fig. 5.  Comparison of the SEE cross sections of the devices with the same feature sizes from different manufacturer: (a) 350 nm SRAM; (b) 130 nm SRAM; (c) 65 nm SRAM.

    图 6  同一厂商系列不同特征尺寸SRAM器件SEU截面对比 (a) HITECHI/RENESAS HM系列SRAM; (b) Cypress CY1318系列SRAM;(c) Cypress CY62126系列SRAM; (d) ISSI IS6X系列SRAM

    Fig. 6.  Comparison of the SEE cross sections of devices from the same manufacturer with different feature sizes: (a) HITECHI/RENESAS HM SRAM; (b) Cypress CY1318SRAM; (c) Cypress CY62126SRAM; (d) ISSI IS6X SRAM

    图 7  不同测试图形下MCU占比 (a) IS61WV204816(40 nm); (b) CY62126DV(130 nm); (c) HM62V8100 (180 nm); (d) IS64WV25616 (65 nm)

    Fig. 7.  MCU rates of the devices with different test patterns: (a) IS61WV204816(40 nm); (b) CY62126DV(130 nm); (c) HM62V8100 (180 nm); (d) IS64WV25616 (65 nm)

    图 8  不同厂商相同特征尺寸SRAM器件MCU情况

    Fig. 8.  MCU rates and sizes of the devices with the same feature sizes from different manufacturer.

    图 9  同一厂商系列不同特征尺寸SRAM器件MCU情况 (a) CY7C1318系列不同特征尺寸MCU情况; (b) IS6X系列不同特征尺寸MCU情况

    Fig. 9.  MCU rates and sizes of the devices from the same manufacturer with different feature sizes: (a) CY7C1318; (b) IS6X

    表 1  待测SRAM器件参数

    Table 1.  Parameters of the SRAM devices for test.

    型号制造商容量/bits特征尺寸/nm工作电压/V
    HM628512AHITACHI4 M (512 K × 8)5005
    HM628512BHITACHI4 M (512 K × 8)3503.3
    HM62V8100RENESAS8 M (1 M × 8)1803.3
    IS62WV1288ISSI1 M (128 K × 8)1303.3
    IS64WV25616ISSI4 M (256 K × 16)653.3
    IS61WV204816ISSI32 M (2 M × 16)403.3
    CY62126VCypress1 M (64 K × 16)3503.0
    CY62126BVCypress1 M (64 K × 16)2503.0
    CY62126DVCypress1 M (64 K × 16)1303.0
    CY7C1318AV18Cypress18 M (1 M × 18)1501.8
    CY7C1318BV18Cypress18 M (1 M × 18)901.8
    CY7C1318KV18Cypress18 M (1 M × 18)651.8
    M328C国产256 K (32 K × 8)651.8
    下载: 导出CSV

    表 2  在CSNS反角白光中子源的SEU测试结果

    Table 2.  Test results of the SEUs at CSNS back-n.

    型号特征尺寸/nm测试图形容量/Mbit注量(>10 MeV)/108 n·cm–2翻转数/#翻转截面/10-14cm2·bit–1不确定度/%
    HM628512A5000x00H125.541762.5212.88
    0x55H127.212622.8912.13
    0xAAH125.382153.1812.47
    0xFFH125.362053.0412.56
    HM628512B3500x00H125.712072.8812.54
    0x55H87.031973.3412.64
    0xAAH128.973032.6911.92
    0xFFH123.261142.7814.03
    HM62V81001800x00H245.313432.5711.75
    0x55H245.293672.7611.67
    0xAAH245.293872.9111.61
    0xFFH245.363422.5311.76
    IS62WV12881300x00H19.52555.5117.05
    0xAAH38.051164.5813.97
    0xFFH310.201514.6813.24
    IS64WV25616650x00H84.762716.7912.08
    0x55H84.763398.4911.77
    0xAAH85.233818.6811.63
    0xFFH84.502757.2812.06
    IS61WV204816400x00H644.765341.6711.30
    0x55H644.765231.6411.32
    0xAAH644.765891.8411.22
    0xFFH646.357071.6611.10
    CY62126V3500x55H39.88642.0616.29
    0xAAH39.88712.2815.81
    CY62126BV2500x55H3128.005161.2811.33
    CY62126DV1300x00H310.401153.5314.00
    0x55H310.601394.1613.45
    0xAAH310.401414.3013.41
    0xFFH39.041063.7314.26
    CY7C1318AV181500X55H325.1212937.5210.80
    CY7C1318BV18900X55H324.693812.4211.63
    CY7C1318KV18650X55H325.093742.1911.65
    M328C650X55H0.751161671.8413.00
    下载: 导出CSV

    表 3  单粒子MCU提取结果

    Table 3.  Extraction results of the single event multiple cell upsets.

    型号特征尺寸/nm不同测试图形时MCU占比最大MCU位数
    0x000x55H0xAAH0xFFH
    HM628512A50000001
    HM628512B35000001
    HM62V81001802.33%5.94%1.09%4.68%2
    IS62WV128813004.65%02
    IS64WV25616659.59%9.14%6.01%0.73%3
    IS61WV2048164028.29%24.09%28.52%25.00%7
    CY62126V35000001
    CY62126BV25000001
    CY62126DV13040.00%35.97%35.46%45.28%3
    CY7C1318AV1815036.13%4
    CY7C1318BV189042.31%6
    CY7C1318KV186556.80%7
    M328C6514.37%2
    下载: 导出CSV
  • [1]

    Wrobel F, Palau J M, Calvet M C, Bersillon O, Duarte H 2000 IEEE Trans. Nucl. Sci. 47 2580Google Scholar

    [2]

    Hubert G, Bezerra F, Nicot J M, Artola L, Cheminet A, Valdivia J N, Mouret J M, Meyer J R, Cocquerez P 2014 IEEE Trans. Nucl. Sci. 61 1703Google Scholar

    [3]

    Autran J L, Munteanu D 2015 Microelectron. Reliab. 55 2147Google Scholar

    [4]

    Juan A C, Guillaume H, Francisco J F, Francesca V, Maud B, Hortensia M, Helmut P, Raoul V 2017 IEEE Trans. Nucl. Sci. 64 2188

    [5]

    Azambuja J R, Nazar G, Rech P, Carro L, Kastensmidt F L, Fairbanks T, Quinn H 2013 IEEE Trans. Nucl. Sci. 60 4243Google Scholar

    [6]

    Normand E 1996 IEEE Trans. Nucl. Sci. 43 2742Google Scholar

    [7]

    Quinn H, Graham P, Manuzzato A, Fairbanks T, Dallmann N, DesGeorges R 2010 IEEE Trans. Nucl. Sci. 57 3547

    [8]

    Abe S, Watanabe Y 2014 IEEE Trans. Nucl. Sci. 61 3519Google Scholar

    [9]

    Granlund T, Granbom B, Olsson N 2003 IEEE Trans. Nucl. Sci. 50 2065Google Scholar

    [10]

    Chen W, Guo X, Wang C, Zhang F, Qi C, Wang X, Jin X, Wei Y, Yang S, Song Z 2019 IEEE Trans. Nucl. Sci. 66 856Google Scholar

    [11]

    Lee U T, Monga S, Choi U, Lee J, Pae S 2018 IEEE Trans. Nucl. Sci. 65 1255Google Scholar

    [12]

    王勋, 张凤祁, 陈伟, 郭晓强, 丁李利, 罗尹虹 2019 物理学报 68 052901Google Scholar

    Wang X, Zhang F Q, Chen W, Guo X Q, Ding L L, Luo Y H 2019 Acta Phys. Sin. 68 052901Google Scholar

    [13]

    Dyer C S, Clucas S N, Sanderson C, Frydland A D, Green R T 2004 IEEE Trans. Nucl. Sci. 51 2817Google Scholar

    [14]

    Weulersse C, Guibbaud N, Beltrando A L, Galinat J, Beltrando C, Miller F, Trochet P, Alexandrescu D 2017 IEEE Trans. Nucl. Sci. 64 2268

    [15]

    郭晓强, 郭红霞, 王桂珍, 林东生, 陈伟, 白小燕, 杨善潮, 刘岩 2009 强激光与粒子束 21 1547

    Guo X Q, Guo H X, Wang G Z, Ling D S, Chen W, Bai X Y, Yang S C, Liu Y 2009 High Power Laser Particle Beams 21 1547

    [16]

    Yang W, Li Y, Li Y, Hu Z, Xie F, He C, Wang S, Zhou B, He H, Khan W, Liang T 2019 Microelectron. Reliab. 99 119Google Scholar

    [17]

    胡志良, 杨卫涛, 李永宏, 李洋, 贺朝会, 王松林, 周斌, 于全芝, 何欢, 谢飞, 白雨蓉, 梁天骄 2019 物理学报 68 238502Google Scholar

    Hu Z L, Yang W T, Li Y H, Li Y, He C H, Wang S L, Zhou B, Yu Q Z, He H, Xie F, Bai Y R, Liang T J 2019 Acta Phys. Sin. 68 238502Google Scholar

    [18]

    JEDEC, Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices: JESD89 A, JEDEC STANDARD, vol.89, JEDEC Solid State Technology Association

    [19]

    Ni W, Jing H, Zhang L, Ou L 2018 Radiat. Phys. Chem. 152 43Google Scholar

    [20]

    鲍杰, 陈永浩, 张显鹏, 等 2019 物理学报 68 080101Google Scholar

    Bao J, Chen Y H, Zhang X P, et al. 2019 Acta Phys. Sin. 68 080101Google Scholar

    [21]

    Ahlbin, J R, Atkinson N M, Gadlage M J, Gaspard N J, Bhuva B L, Loveless T D, Zhang E X, Chen L, Massengill L W 2011 IEEE Trans. Nucl. Sci. 58 2585Google Scholar

    [22]

    Lilja K, Bounasser M, Wen S J, et al. 2013 IEEE Trans. Nucl. Sci. 60 2782Google Scholar

    [23]

    He Y, Chen S, Chen J, Chi Y, Liang B, Liu B, Qin J, Du Y, Huang P 2012 IEEE Trans. Nucl. Sci. 59 2772Google Scholar

    [24]

    Atkinson N M, Witulski A F, Holman W T, et al. 2011 IEEE Trans. Nucl. Sci. 58 885Google Scholar

    [25]

    Wang X, Ding L, Luo Y, Chen W, Zhang F, Guo X 2020 IEEE Trans. Nucl. Sci. 67 1443Google Scholar

    [26]

    王勋, 罗尹虹, 丁李利, 张凤祁, 陈伟, 郭晓强, 王坦 2020 原子能科学技术Google Scholar

    Wang X, Luo Y H, Ding L L, Zhang F Q, Chen W, Guo X Q, Wang T 2020 Atom. Energy Sci. Technol.Google Scholar

    [27]

    Radaelli D, Puchner H, Wong S, Daniel S 2005 IEEE Trans. Nucl. Sci. 52 2433Google Scholar

    [28]

    Yasuo Y, Hironaru Y, Eishi I, Hideaki K, Masatoshi S, Takashi A, Shigehisa Y 2007 IEEE Trans. Nucl. Sci. 54 1030Google Scholar

    [29]

    Zhang Z G, Liu J, Hou M D, et al. 2013 Chin. Phys. B 22 086102Google Scholar

    [30]

    Ikeda N, Kuboyama S, Matsuda S, Handa T 2005 IEEE Trans. Nucl. Sci. 52 2200Google Scholar

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出版历程
  • 收稿日期:  2020-02-23
  • 修回日期:  2020-05-18
  • 上网日期:  2020-05-20
  • 刊出日期:  2020-08-20

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