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STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION

LU FANG SUN HENG-HUI HUANG YUN SHENG CHI ZHANG ZENG-GUANG WANG LIANG

STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION

LU FANG, SUN HENG-HUI, HUANG YUN, SHENG CHI, ZHANG ZENG-GUANG, WANG LIANG
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  • Received Date:  29 July 1986
  • Published Online:  18 March 2005

STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION

  • 1. (1)复旦大学物理系; (2)上海整流器总厂

Abstract: A study of defects in silicon produced by hightemperature electron irradiation was carried out. It was found that the introduction rate of defect increased with the temperature at which the samples were irradiated by electron. After the temperature reached an "extreme" value Tm, the introduction rate of defect began to decrease. The Tm value was related to the annealing activation energy of defect. It was also found that the density of E3 (Ec-0.36 eV) defects greatly increased in hightemperature electron irradiation. When electron irradiation was carried out at 330℃, the density of E3 defects was about 6 times as large as that at room temperature. The possible structure of the E3 defect is multivacancy-oxygen complex.

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