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HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES

YUAN HAO-XIN LI QI-GUANG JIANG SHAN LU WEI TONG FEI-MING TANG DING-YUAN

HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES

YUAN HAO-XIN, LI QI-GUANG, JIANG SHAN, LU WEI, TONG FEI-MING, TANG DING-YUAN
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  • Received Date:  24 April 1989
  • Published Online:  22 June 2005

HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES

  • 1. 中国科学院上海技术物理研究所,上海,200083

Abstract: Theoretical and experimental studies have been made about the electrical characteristics of Hg1-xCdxTe n+-p photodiodes with x=0.5 at room temperature and at hydrostatic pressures up to 2GPa. The observed "anomalous" pressure dependence of the current-voltage characteristics of p-n junctions, which exhibits in the small bias region, has been satisfactorily explained using a theory which takes into account the pressure dependence of deep levels and its effect on deep level-assisted tunneling current. By fitting the dark current to this theory, two deep levels, D1(=Ev + 0.75Eg) and D2( = Ev+0.5Eg), as well as their respective electron and hole lifetimes, were obtained. The pressure coefficients of deep levels in undoped Hg1-x Cdx Te were also obtained.

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