Numerical analysis of Cu<sub>2</sub>ZnSnS<sub>4</sub> solar cells on Si substrate

Liu Hui-Cheng; Xu Jia-Xiong; Lin Jun-Hui

doi:10.7498/aps.70.20201936

Abstract

The Cu₂ZnSnS₄ (CZTS) solar cell prepared on Si substrate has an advantage of low lattice mismatch between CZTS and Si substrate, but the conversion efficiency of reported p-CZTS/n-Si solar cells is still low at present. In this work, the CZTS solar cells on Si substrate are calculated numerically by heterojunction solar cell simulation software Afors-het. The calculated results show that the p-CZTS and n-Si act as window layer and absorber respectively in the p-CZTS/n-Si solar cell because the band gap of p-CZTS is larger than that of n-Si. The conversion efficiency of p-CZTS/n-Si solar cell increases as the thickness of p-CZTS window layer decreases. The highest calculated conversion efficiency of p-CZTS/n-Si solar cell is 18.57%. In the best p-CZTS/n-Si solar cell, most of the incident light cannot pass through the p-CZTS window layer due to the high absorption coefficient of p-CZTS, which limits the conversion efficiency of solar cell. In order to solve the problems existing in the p-CZTS/n-Si structure, a novel n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si solar cell structure is proposed, where n-ZnO:Al and i-ZnO are window layers, n-CdS is buffer layer, p-CZTS is absorber, and p-Si is substrate and back electrode. The dark current density-voltage (J-V) characteristic curves of p-CZTS/p-Si structure varying with the thickness and doping concentration of p-Si and the doping concentration of p-CZTS are calculated to investigate the feasibility of p-Si as a back electrode of p-CZTS. All the calculated J-V characteristic curves of p-CZTS/p-Si structure are linear, indicating the formation of ohmic contact between p-CZTS and p-Si. The photovoltaic properties of n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si solar cell are further calculated. The built-in electric field distributed in n-ZnO:Al, i-ZnO, n-CdS, and p-CZTS contribute to the collection of photo-generated carriers. The conversion efficiency of n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si solar cell is enhanced with the decrease of the thickness of p-Si and the increase of doping concentrations of p-Si and p-CZTS and the thickness of p-CZTS. Without considering the effect of parasitic series resistance and parallel resistance and defect states, the highest conversion efficiency of ideal n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si solar cell is 28.41%. The calculated results in this work show that the n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si solar cell has an appropriate structure for CZTS solar cell on Si substrate.

Keywords:

Authors and contacts

School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China

Corresponding author: Xu Jia-Xiong, xujiaxiong@gdut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61504029) and the Science and Technology Project of Guangdong Province, China (Grant No. 2017A010104017)

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References

[1]	Matsushita H, Ichikawa T, Katsui A 2005 J. Mater. Sci. 40 2003 Google Scholar
[2]	Steinhagen C, Panthani M G, Akhavan V, Goodfellow B, Koo B, Korgel B A 2009 J. Am. Chem. Soc. 131 12554 Google Scholar
[3]	Todorov T, Gunawan O, Chey S J, De Monsabert T G, Prabhakar A, Mitzi D B 2011 Thin Solid Films 519 7378 Google Scholar
[4]	Scragg J J, Dale P J, Peter L M, Zoppi G, Forbes I 2008 Phys. Status Solidi B 245 1772 Google Scholar
[5]	Maklavani S E, Mohammadnejad S 2020 Sol. Energy 204 489 Google Scholar
[6]	Nadaraja M, Singh O P, Gour K S, Singh V N 2020 J. Nanosci. Nanotechnol. 20 3925 Google Scholar
[7]	Akcay N, Ataser T, Ozen Y, Ozcelik S 2020 Thin Solid Films 704 138028 Google Scholar
[8]	Karade V, Lokhande A, Babar P, Gang M G, Suryawanshi M, Patil P, Kim J H 2019 Sol. Energy Mater. Sol. Cells 200 109911 Google Scholar
[9]	Ataca C, Topsakal M, Akturk E, Ciraci S 2011 J. Phys. Chem. C 115 16354 Google Scholar
[10]	Song N, Young M, Liu F Y, Erslev P, Wilson S, Harvey S P, Teeter G, Huang Y D, Hao X J, Green M A 2015 Appl. Phys. Lett. 106 252102 Google Scholar
[11]	Xu J X, Yang Y Z, Cao Z M, Xie Z W 2016 Optik 127 1567 Google Scholar
[12]	Shin B H, Zhu Y, Gershon T, Bojarczuk N A, Guha S 2014 Thin Solid Films 556 9 Google Scholar
[13]	Sheng X, Wang L, Tian Y, Luo Y P, Chang L T, Yang D R 2013 J. Mater. Sci.-Mater. Electron. 24 548 Google Scholar
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[15]	Yeh M Y, Lei P H, Lin S H, Yang C D 2016 Materials 9 526 Google Scholar
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Cited By

图 1 仿真结构示意图　(a) p-CZTS/n-Si; (b) p-CZTS/p-Si; (c) n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si

Figure 1. Diagrams of different structures: (a) p-CZTS/n-Si; (b) p-CZTS/p-Si; (c) n-ZnO:Al/i-ZnO/CdS/CZTS/p-Si.

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图 2 p-CZTS/n-Si太阳能电池性能随　(a) n-Si的厚度d_n-Si, (b) n-Si的掺杂浓度N_n-Si, (c) p-CZTS的厚度d_p-CZTS, (d) p-CZTS的掺杂浓度N_p-CZTS的变化关系

Figure 2. The performances of p-CZTS/n-Si solar cell with the changes of (a) the thickness of n-Si (d_n-Si), (b) the doping concentration of n-Si (N_n-Si), (c) the thickness of p-CZTS (d_p-CZTS), (d) the doping concentration of p-CZTS (N_p-CZTS).

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图 3 最优p-CZTS/n-Si太阳能电池的　(a) J–V特性曲线, (b)光谱响应, (c)载流子产生率分布图

Figure 3. The (a) J–V characteristic curve, (b) spectral response, (c) generation rate distribution of the optimal p-CZTS/n-Si solar cell

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图 4 p-CZTS/p-Si的J-V特性曲线随p-Si厚度d_p-Si的变化

Figure 4. J-V characteristic curves of p-CZTS/p-Si with the change of the thickness of p-Si (d_p-Si).

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图 5 p-CZTS/p-Si的J-V特性曲线随p-Si掺杂浓度N_p-Si的变化

Figure 5. J-V characteristic curves of p-CZTS/p-Si with the change of the doping concentration of p-Si (N_p-Si).

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图 6 p-Si掺杂浓度为　(a) 1 × 10¹⁵ cm^–3, (b) 1 × 10¹⁷ cm^–3, (c) 1 × 10¹⁹ cm^–3时, p-CZTS/p-Si的能带图

Figure 6. Band diagrams of p-CZTS/p-Si when the doping concentrations of p-Si are (a) 1 × 10¹⁵ cm^–3, (b) 1 × 10¹⁷ cm^–3, (c) 1 × 10¹⁹ cm^–3

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图 7 p-CZTS/p-Si的J-V特性曲线随p-CZTS掺杂浓度N_p-CZTS的变化

Figure 7. J-V characteristic curves of p-CZTS/p-Si with the change of the doping concentration of p-CZTS (N_p-CZTS).

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图 8 p-CZTS掺杂浓度为　(a) 1 × 10¹⁵ cm^–3, (b) 1 × 10¹⁷ cm^–3, (c) 1 × 10¹⁹ cm^–3时, p-CZTS/p-Si的能带图

Figure 8. Band diagrams of p-CZTS/p-Si when the doping concentrations of p-CZTS are (a) 1 × 10¹⁵ cm^–3, (b) 1 × 10¹⁷ cm^–3, (c) 1 × 10¹⁹ cm^–3.

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图 9 n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si太阳能电池的性能随　(a) p-Si厚度d_p-Si, (b) p-Si掺杂浓度N_p-Si, (c) p-CZTS厚度d_p-CZTS, (d) p-CZTS掺杂浓度N_p-CZTS的变化关系

Figure 9. The performances of n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si solar cell with the changes of (a) the thickness of p-Si (d_p-Si), (b) the doping concentration of p-Si (N_p-Si), (c) the thickness of p-CZTS (d_p-CZTS), (d) the doping concentration of p-CZTS (N_p-CZTS).

DownLoad: Full-Size Img PowerPoint

图 10 优化的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si太阳能电池的　(a) J–V特性曲线, (b)光谱响应, (c)内建电场, (d)能带图

Figure 10. The (a) J–V characteristic curve, (b) spectral response, (c) built-in electric field, (d) band diagram of the optimal n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si solar cell.

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表 1 仿真参数取值

Table 1. Simulated parameters.

参数	p-CZTS	n-CdS	i-ZnO	n-ZnO	p-Si	n-Si
介电常数	10	10	9	9	11.9	11.9
电子亲和能/eV	3.8	4.2	4.6	4.6	4.05	4.05
禁带宽度/eV	1.53	2.4	3.3	3.3	1.12	1.12
导带有效密度/cm^–3	2.2 × 10¹⁸	1.8 × 10¹⁹	2.2 × 10¹⁸	2.2 × 10¹⁸	3.32 × 10¹⁸	3.32 × 10¹⁸
价带有效密度/cm^–3	1.8 × 10¹⁹	2.4 × 10¹⁸	1.8 × 10¹⁹	1.8 × 10¹⁹	1.44 × 10¹⁹	1.44 × 10¹⁹
电子迁移率/(cm²·V^–1·s^–1)	100	100	100	100	1450	1450
空穴迁移率/(cm²·V^–1·s^–1)	57.6	25	25	25	500	500
受主掺杂浓度/cm^–3	变量	0	0	0	变量	0
施主掺杂浓度/cm^–3	0	1 × 10¹⁷	1 × 10⁵	1 × 10¹⁸	0	变量
缺陷浓度/cm^–3	1 × 10¹²	6 × 10¹⁶	1 × 10¹⁷	1 × 10¹⁷	—	—
电子俘获截面/cm²	4.13 × 10^–14	1 × 10^–17	1 × 10^–12	1 × 10^–12	—	—
空穴俘获截面/cm²	4.13 × 10^–11	1 × 10^–13	1 × 10^–15	1 × 10^–15	—	—
厚度/μm	变量	0.05	0.2	0.2	变量	变量

DownLoad: CSV

[1]	Matsushita H, Ichikawa T, Katsui A 2005 J. Mater. Sci. 40 2003 Google Scholar
[2]	Steinhagen C, Panthani M G, Akhavan V, Goodfellow B, Koo B, Korgel B A 2009 J. Am. Chem. Soc. 131 12554 Google Scholar
[3]	Todorov T, Gunawan O, Chey S J, De Monsabert T G, Prabhakar A, Mitzi D B 2011 Thin Solid Films 519 7378 Google Scholar
[4]	Scragg J J, Dale P J, Peter L M, Zoppi G, Forbes I 2008 Phys. Status Solidi B 245 1772 Google Scholar
[5]	Maklavani S E, Mohammadnejad S 2020 Sol. Energy 204 489 Google Scholar
[6]	Nadaraja M, Singh O P, Gour K S, Singh V N 2020 J. Nanosci. Nanotechnol. 20 3925 Google Scholar
[7]	Akcay N, Ataser T, Ozen Y, Ozcelik S 2020 Thin Solid Films 704 138028 Google Scholar
[8]	Karade V, Lokhande A, Babar P, Gang M G, Suryawanshi M, Patil P, Kim J H 2019 Sol. Energy Mater. Sol. Cells 200 109911 Google Scholar
[9]	Ataca C, Topsakal M, Akturk E, Ciraci S 2011 J. Phys. Chem. C 115 16354 Google Scholar
[10]	Song N, Young M, Liu F Y, Erslev P, Wilson S, Harvey S P, Teeter G, Huang Y D, Hao X J, Green M A 2015 Appl. Phys. Lett. 106 252102 Google Scholar
[11]	Xu J X, Yang Y Z, Cao Z M, Xie Z W 2016 Optik 127 1567 Google Scholar
[12]	Shin B H, Zhu Y, Gershon T, Bojarczuk N A, Guha S 2014 Thin Solid Films 556 9 Google Scholar
[13]	Sheng X, Wang L, Tian Y, Luo Y P, Chang L T, Yang D R 2013 J. Mater. Sci.-Mater. Electron. 24 548 Google Scholar
[14]	李琳, 文亚南, 董燕, 汪壮兵, 梁齐 2012 真空 49 45 Google Scholar Li L, Wen Y N, Dong Y, Wang Z B, Liang Q 2012 Vacuum 49 45 Google Scholar
[15]	Yeh M Y, Lei P H, Lin S H, Yang C D 2016 Materials 9 526 Google Scholar
[16]	Singh S, Katiyar A K, Midya A, Ghorai A, Ray S K 2017 Nanotechnology 28 435704 Google Scholar
[17]	Wang W, Winkler M T, Gunawan O, Gokmen T, Todorov T K, Zhu Y, Mitzi D B 2014 Adv. Energy Mater. 4 1301465 Google Scholar
[18]	Varache R, Leendertz C, Gueunier-farret M E, Haschke J, Munoz D, Korte L 2015 Sol. Energy Mater. Sol. Cells 141 14 Google Scholar
[19]	Amin N, Hossain M I, Chelvanathan P, Uzzaman A M, Sopian K 2010 International Conference on Electrical & Computer Engineering Dhaka, Bangladesh, December 18–20, 2010 p730
[20]	Jiang F, Shen H L, Wang W, Zhang L 2011 Appl. Phys. Express 4 074101 Google Scholar
[21]	许佳雄, 姚若河 2012 物理学报 61 187304 Google Scholar Xu J X, Yao R H 2012 Acta Phys. Sin. 61 187304 Google Scholar
[22]	Prabeesh P, Selvam I P, Potty S N 2016 Thin Solid Films 606 94 Google Scholar
[23]	Ali K, Khan S A, Jafri M Z M 2014 Sol. Energy 101 1 Google Scholar
[24]	Yoshikawa K, Kawasaki H, Yoshida W, Irie T, Konishi K, Nakano K, Uto T, Adachi D, Kanematsu M, Uzu H, Yamamoto K 2017 Nat. Energy 2 17032 Google Scholar

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Numerical analysis of Cu₂ZnSnS₄ solar cells on Si substrate

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Corresponding author: Xu Jia-Xiong, xujiaxiong@gdut.edu.cn

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Numerical analysis of Cu2ZnSnS4 solar cells on Si substrate

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Numerical analysis of Cu₂ZnSnS₄ solar cells on Si substrate