Status and prospective of high-efficiency c-Si solar cells based on tunneling oxide passivation contacts

Ren Cheng-Chao; Zhou Jia-Kai; Zhang Bo-Yu; Liu Zhang; Zhao Ying; Zhang Xiao-Dan; Hou Guo-Fu

doi:10.7498/aps.70.20210316

Abstract

Current photovoltaic market is dominated by crystalline silicon (c-Si) solar modules and this status will last for next decades. Among all high-efficiency c-Si solar cells, the tunnel oxide passivated contact (TOPCon) solar cell has attracted much attention due to its excellent passivation and compatibility with the traditional c-Si solar cells. The so-called tunnel oxide passivated contact (TOPCon) consists of an ultra-thin silicon oxide layer less than 2 nm in thickness and a heavily doped poly-Si layer, which is used for implementing effective passivation and selective collection of carriers. This TOPCon solar cell has some advantages including no laser contact opening, no light-induced degradation and no elevated temperature-induced degradation because of N-type c-Si wafer, compatibility with high temperature sintering and technical scalability. This paper first introduces the basic structure and principles of TOPCon solar cells, then compares the existing methods of preparing ultra-thin silicon oxide layer and heavily doped poly-Si layer, and finally points out the future research direction of this cell based on the analysis of the current research status.

Keywords:

Authors and contacts

1.
Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300350, China
2.
Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China
3.
Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education, Tianjin 300350, China
4.
Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin, Tianjin 300350, China

Corresponding author: Hou Guo-Fu, gfhou@nankai.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2018YFB1500402) and the National Natural Science Foundation of China (Grant No. 62074084).

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References

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Cited By

图 1 钝化接触太阳电池中载流子的输运过程

Figure 1. Carrier transport in passivated contact solar cell.

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图 2 TOPCon电池能带图^[28]

Figure 2. Energy band diagram of TOPCon cell^[28].

DownLoad: Full-Size Img PowerPoint

图 3 汞蒸气灯的示意图和反应机理^[36]

Figure 3. Schematic diagram and reaction mechanism of mercury vapor lamp^[36].

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图 4 三种氧化法制备的TOPCon对称钝化结构在不同的氧化时间和退火温度后的iV_oc^[37]

Figure 4. Implied open circuit voltage of TOPCon passivation structure prepared by three oxidation methods after different oxidation time and annealing temperature^[37].

DownLoad: Full-Size Img PowerPoint

图 5 不同氧化法得到氧化层的XPS光谱　(a) SiO_x/Si界面的Si 2p光谱及拟合厚度; (b)不同氧化技术得到的SiO_x层的化学计量比^[42]

Figure 5. XPS spectra of oxide layers obtained by different oxidation methods：(a) Si 2p spectra and fitting thickness of SiO_x/ Si interface; (b) stoichiometry of SiO_x layers obtained by different oxidation technologies^[42].

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图 6 研究的电池结构　(a)具有N⁺多晶硅BSF的N- RISE BJBC电池; (b)具有常规c-Si BSF的参考N-RISE BJBC电池^[46]

Figure 6. Structure of the studied cell: (a) N- RISE BJBC cell with N⁺ polysilicon BSF; (b) reference n-rise BJBC cell with conventional c-Si BSF ^[46].

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图 7 (a)具有poly-Si后接触和poly-SiC_x前接触的TOPCon太阳电池光照下的电流-电压(Ⅳ)曲线; (b)具有不同窗口层的太阳电池的外部量子效率(EQE)^[50]

Figure 7. (a) Current voltage (Ⅳ) curves of TOPCon solar cells with poly-Si back contact and poly-SiC_x front contact under illumination；(b) external quantum efficiency (EQE) of solar cells with different window layers^[50].

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图 8 隧穿氧化层钝化接触太阳电池结构图^[23]

Figure 8. Structure of passivated contact solar cell with tunneling oxide layer^[23].

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图 9 PANDA-TOPCon结构的太阳电池结构图

Figure 9. Structure of PANDA-TOPCon solar cell.

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图 10 POLO电池的基本结构图^[56]

Figure 10. Basic structure of POLO cell^[56].

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表 1 基于隧穿氧化物钝化接触的高效晶体硅太阳电池的研究简况表

Table 1. Research status and prospective of high-efficiency c-Si solar cells based on tunneling oxide passivation contacts.

Institution	Type	E_ff/ %	V_oc/ mV	J_sc/ (mA·cm^–2)	FF/ %	Area/ cm²	Year
Trina	N-type i-TOPCon	24.58	717	40.6	84.5	244.31	2020^[10]
JinkoSolar/AUO	N-type TOPCon	24.90	712.8	41.68	83.84	235.80	2021^[11]
中来	N-type TOPCon	23.19	701	39.9	83	246.21	2019^[12]
ISFH	P-type POLO	26.1	726.6	42.62	84.28	4	2018^[13]
Frauhofer ISE	N-type TOPCon	25.8	724	42.9	83.1	4	2017^[14]
Frauhofer ISE	N-type TOPCon	24.5	713	41.4	83.1	100	2017^[15]
Frauhofer ISE	N-type TOPCon	23.4	697	41.1	81.2	200	2018^[16]

DownLoad: CSV

表 2 氧化层制备方法优缺点对比

Table 2. Comparison of advantages and disadvantages of oxide layer preparation methods.

方法	优点	缺点
硝酸氧化硅片法(NAOS)	制备方法简单, 制备温度相对较低, 硝酸溶液可重复利用, 氧化层薄膜质量好^[32,33]	硝酸具有强氧化性, 且硝酸蒸汽对人体有害, 对环境也会造成污染
过氧化氢法(H₂O₂)	生成物污染小, 不会对人产生危害, 制备方法简单^[34]	H₂O₂的氧化性较弱, 为提高SiO_x的质量需额外进行退火处理
臭氧去离子氧化法(DIO₃)	具有良好的界面钝化效果^[35,36]	设备昂贵且维护成本较高
UV/O₃ 光解法	可以在UV光的照射下有效地取出Si片表面的有机残留物^[36,37]	制备工艺复杂, 且厚度均匀性相对较差
热氧化法	容易获得较高质量的SiO_x, 且 Si/SiO_x的界面态密度也非常低^[38]	漏电流密度大, 且高温带来的预算也很高
等离子体辅助N₂O氧化法	可以实现超薄SiO_x层和非晶硅层在 PECVD 中的一次沉积 ^[39,40]	厚度不易精确控制
阳极氧化方法	场致阳极化(FIA)可以均匀地形成超薄隧道氧化硅层 ^[41]	可能会导致隧道氧化层界面呈现出较低的空穴势垒能量

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表 3 掺杂层制备方法优缺点对比

Table 3. Comparison of advantages and disadvantages of doping layer preparation method.

方法	优点	缺点
LPCVD	产量高, 可以直接制备n型的多晶硅层	会产生绕镀, 效率相对较低
PECVD	可以进行单面制备, 效率高	产量低, 对设备要求高, 且对环境有污染
溅射法	无污染, 操作简单且安全	均匀性相对较差, 退火温度想对较高

DownLoad: CSV

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[2]	邵杰, 钱黄俊 2018 绿色环保建材 12 229 Shao J, Qian H J 2018 Green Environ. Protect. Build. Mater. 12 229
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[6]	Rehman A U, Lee S H 2013 Sci. World J. 11 470347
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[8]	Schmidt J, Peibst R, Brendel R 2019 Silicon PV 201 9
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[10]	Chen D, Chen Y, Wang Z, Gong J, Liu C, Zou Y, He Y, Wang Y, Yuan L, Lin W, Xia R, Yin L, Zhang X, Xu G, Yang Y, Shen H, Feng Z, Altermatt P P, Verlinden P J 2020 Sol. Energ. Mat. Sol. C. 206 110258 Google Scholar
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[17]	Blakers A W, Wang A, Milne A M, Zhao J, Green M A 1989 Appl. Phys. Lett. 55 1363 Google Scholar
[18]	Green M A, Blakers A W, Zhao J, Milne A M, Wang A, Dai X 1990 IEEE T. Electron. Dev. 37 331 Google Scholar
[19]	Schneiderlchner E, Preu R, Lüdemann R, Glunz S W 2002 Prog. Photovoltaics 10 29 Google Scholar
[20]	Wang A, Zhao J, Green M A 1990 Appl. Phys. Lett. 57 602 Google Scholar
[21]	Zhao J, Green M A 1991 IEEE T. Electron. Dev. 38 1925 Google Scholar
[22]	史济群 1994 华中理工大学学报(自然科学版) 9 1
[23]	Feldmann F, Bivour M, Reichel C, Hermle M, Glunz S W 2014 Sol. Energ. Mat. Sol. C. 120 270 Google Scholar
[24]	刘恩科, 朱秉升, 罗晋生 1994 半导体物理学 (北京: 国防工业出版社) 第146页 Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physical (Beijing: National Defense Industry Press) p146 (in Chinese)
[25]	Schroder D K 1998 Semiconductor Material and Device Characterization (New York: Wiley-IEEE Press) pp107–108
[26]	Sze S M, Ng K K 2006 Phys. Semi. Dev. 8 5
[27]	Tao Y, Upadhyaya V, Jones K, Rohatgi A 2016 AIMS Mat. Sci. 3 180
[28]	Rohatgi A, Rounsaville B, Ok Y-W, Tam A M, Zimbardi F, Upadhyaya A D, Tao Y, Madani K, Richter A, Benick J, Hermle M 2017 IEEE J. Photovolt. 7 1236 Google Scholar
[29]	Glunz S W, Feldmann F 2018 Sol. Energ. Mat. Sol. C. 185 260 Google Scholar
[30]	Shewchun J, Singh R, Green M 1977 J. Appl. Phys. 48 765 Google Scholar
[31]	Lancaster K, Groer S, Feldmann F, Naumann V, Hagendorf C 2016 Energ. Procedia 92 116 Google Scholar
[32]	Matsumoto T, Hirose R, Shibata F, Ishibashi D, Ogawara S, Kobayashi H 2015 Sol. Energ. Mat. Sol. C. 134 298 Google Scholar
[33]	Matsumoto T, Nakajima H, Irishika D, Nonaka T, Imamura K, Kobayashi H 2017 Appl. Surf. Sci. 395 56 Google Scholar
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[37]	Moldovan A, Feldmann F, Zimmer M, Rentsch J, Benick J, Hermle M 2015 Sol. Energ. Mat. Sol. C. 142 123 Google Scholar
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[39]	Jeon M, Kang J, Shim G, Ahn S, Balaji N, Park C, Lee Y, Yi J 2017 Vacuum 141 152 Google Scholar
[40]	Ron Y, Raveh A, Carmi U, Inspektop A, Avni R 1983 Thin Solid Films 107 181 Google Scholar
[41]	Tong J, Wang X, Ouyang Z, Lennon A 2015 Energ. Procedia 77 840 Google Scholar
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Vol. 70, Issue 17 - 2021-09-05

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