Flexible neuromorphic transistors and their biomimetric sensing application

Jiang Zi-Han; Ke Shuo; Zhu Ying; Zhu Yi-Xin; Zhu Li; Wan Chang-Jin; Wan Qing

doi:10.7498/aps.71.20220308

Abstract

Biological perception system has the unique advantages of high parallelism, high error tolerance, self-adaptation and low power consumption. Using neuromorphic devices to emulate biological perceptual system can effectively promote the development of brain-computer interfaces, intelligent perception, biological prosthesis and so on. Compared with other neuromorphic devices, multi-terminal neuromorphic transistors can not only realize signal transmission and training learning at the same time, but also carry out nonlinear spatio-temporal integration and collaborative regulation of multi-channel signals. However, the traditional rigid neuromorphic transistor is difficult to achieve bending deformation and close fit with the human body, which limits the application range of neuromorphic devices. Therefore, the research of flexible neuromorphic transistor with good bending characteristics has become the focus of recent research. Firstly, this review introduces the research progress of many kinds of flexible neuromorphic transistors, including device structure, working principle and basic functions. In addition, the application of the flexible neuromorphic transistor in the field of bionic perception is also introduced. Finally, this review also gives a summary and simple prospect of the above research fields.

Keywords:

Authors and contacts

School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China

Corresponding author: Wan Chang-Jin, cjwan@nju.edu.cn ; Wan Qing, wanqing@nju.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 62074075, 62174082).

FullText HTML : translate this paragraph

References

[1]	Jung Y H, Park B, Kim J U, Kim T I 2019 Adv. Mater. 31 1803637 Google Scholar
[2]	Lumpkin E A, Caterina M J 2007 Nature 445 858 Google Scholar
[3]	Abraira Victoria E, Ginty David D 2013 Neuron 79 618 Google Scholar
[4]	Wan C J, Zhu L Q, Liu Y H, Feng P, Liu Z P, Cao H L, Xiao P, Shi Y, Wan Q 2016 Adv. Mater. 28 3557 Google Scholar
[5]	Indiveri G, Chicca E, Douglas R J 2009 Cognit. Comput. 1 119 Google Scholar
[6]	James C D, Aimone J B, Miner N E, Vineyard C M, Rothganger F H, Carlson K D, Mulder S A, Draelos T J, Faust A, Marinella M J, Naegle J H, Plimpton S J 2017 Biol. Inspired Cogn. Archit. 19 49
[7]	Ho V M, Lee J A, Martin K C 2011 Science 334 623 Google Scholar
[8]	Machens Christian K 2012 Science 338 1156 Google Scholar
[9]	Kuzum D, Yu S, Wong H S 2013 Nanotechnology 24 382001 Google Scholar
[10]	Khodagholy D, Gelinas J N, Thesen T, Doyle W, Devinsky O, Malliaras G G, Buzsáki G 2015 Nat. Neurosci. 18 310 Google Scholar
[11]	Viventi J, Kim D H, Vigeland L, Frechette E S, Blanco J A, Kim Y S, Avrin A E, Tiruvadi V R, Hwang S W, Vanleer A C, Wulsin D F, Davis K, Gelber C E, Palmer L, Van der Spiegel J, Wu J, Xiao J, Huang Y, Contreras D, Rogers J A, Litt B 2011 Nat. Neurosci. 14 1599 Google Scholar
[12]	Xu L, Gutbrod S R, Bonifas A P, Su Y, Sulkin M S, Lu N, Chung H J, Jang K I, Liu Z, Ying M, Lu C, Webb R C, Kim J S, Laughner J I, Cheng H, Liu Y, Ameen A, Jeong J W, Kim G T, Huang Y, Efimov I R, Rogers J A 2014 Nat. Commun. 5 3329 Google Scholar
[13]	Lipomi D J, Vosgueritchian M, Tee B C K, Hellstrom S L, Lee J A, Fox C H, Bao Z 2011 Nat. Nanotechnol. 6 788 Google Scholar
[14]	Wang C, Hwang D, Yu Z, Takei K, Park J, Chen T, Ma B, Javey A 2013 Nat. Mater. 12 899 Google Scholar
[15]	Kim D H, Ghaffari R, Lu N, ’et al. 2012 Proc. Natl. Acad. Sci. U. S. A. 109 19910 Google Scholar
[16]	Moore D R, Shannon R V 2009 Nat. Neurosci. 12 686 Google Scholar
[17]	Minev Ivan R, Musienko P, Hirsch A, et al. 2015 Science 347 159 Google Scholar
[18]	Luo Y H L, da Cruz L 2016 Prog. Retinal Eye Res. 50 89 Google Scholar
[19]	Terabe K, Hasegawa T, Nakayama T, Aono M 2005 Nature 433 47 Google Scholar
[20]	Aono M, Hasegawa T 2010 Proc. IEEE 98 2228 Google Scholar
[21]	Hasegawa T, Ohno T, Terabe K, Tsuruoka T, Nakayama T, Gimzewski J K, Aono M 2010 Adv. Mater. 22 1831 Google Scholar
[22]	Zhao M, Li R, Xue J 2020 AIP Adv. 10 045003 Google Scholar
[23]	Jeon Y R, Choi J, Kwon J D, Park M H, Kim Y, Choi C 2021 ACS Appl. Mater. Interfaces 13 10161 Google Scholar
[24]	Tuma T, Pantazi A, Le Gallo M, Sebastian A, Eleftheriou E 2016 Nat. Nanotechnol. 11 693 Google Scholar
[25]	Hua L, Zhu H, Shi K, Zhong S, Tang Y, Liu Y 2021 IEEE Trans. Circuits Syst. I, Reg. Papers 68 1599 Google Scholar
[26]	Yao P, Wu H, Gao B, Tang J, Zhang Q, Zhang W, Yang J J, Qian H 2020 Nature 577 641 Google Scholar
[27]	Wen S, Wei H, Yan Z, Guo Z, Yang Y, Huang T, Chen Y 2020 IEEE Trans. Netw. Sci. Eng. 7 1431 Google Scholar
[28]	Du F, Lu J G 2021 Appl. Math. Comput. 389 125616
[29]	Grollier J, Querlioz D, Camsari K Y, Everschor-Sitte K, Fukami S, Stiles M D 2020 Nat. Electron. 3 360 Google Scholar
[30]	Jiang J, Guo J, Wan X, Yang Y, Xie H, Niu D, Yang J, He J, Gao Y, Wan Q 2017 Small 13 1700933 Google Scholar
[31]	Jiang S S, He Y L, Liu R, Zhang C X, Shi Y, Wan Q 2021 J. Phys. D-Appl. Phys. 54 185106 Google Scholar
[32]	Beck M E, Shylendra A, Sangwan V K, Guo S, Gaviria Rojas W A, Yoo H, Bergeron H, Su K, Trivedi A R, Hersam M C 2020 Nat. Commun. 11 1565 Google Scholar
[33]	Taube Navaraj W, Garcia Nunez C, Shakthivel D, Vinciguerra V, Labeau F, Gregory D H, Dahiya R 2017 Front. Neurosci. 11 501 Google Scholar
[34]	Cho Y, Lee J Y, Yu E, Han J H, Baek M H, Cho S, Park B G 2019 Micromachines 10 32 Google Scholar
[35]	Dai S, Wu X, Liu D, Chu Y, Wang K, Yang B, Huang J 2018 ACS Appl. Mater. Interfaces 10 21472 Google Scholar
[36]	John R A, Liu F, Nguyen Anh C, Kulkarni M R, Zhu C, Fu Q, Basu A, Liu Z, Mathews N 2018 Adv. Mater. 30 1800220 Google Scholar
[37]	Kim M K, Lee J S 2019 Nano Lett. 19 2044 Google Scholar
[38]	Nishitani Y, Kaneko Y, Ueda M, Morie T, Fujii E 2012 J. Appl. Phys. 111 124108 Google Scholar
[39]	Sun J, Oh S, Choi Y, Seo S, Oh M J, Lee M, Lee W B, Yoo P J, Cho J H, Park J H 2018 Adv. Funct. Mater. 28 1804397 Google Scholar
[40]	Wang J, Chen Y, Kong L A, Fu Y, Gao Y, Sun J 2018 Appl. Phys. Lett. 113 151101 Google Scholar
[41]	Jiang J, Hu W, Xie D, Yang J, He J, Gao Y, Wan Q 2019 Nanoscale 11 1360 Google Scholar
[42]	Park H L, Lee Y, Kim N, Seo D G, Go G T, Lee T W 2020 Adv. Mater. 32 1903558 Google Scholar
[43]	Rogers J A, Someya T, Huang Y 2010 Science 327 1603 Google Scholar
[44]	Tiwari N, Rajput M, John R A, Kulkarni M R, Nguyen A C, Mathews N 2018 ACS Appl. Mater. Interfaces 10 30506 Google Scholar
[45]	Meng J, Wang T, Zhu H, Ji L, Bao W, Zhou P, Chen L, Sun Q Q, Zhang D W 2022 Nano Lett. 22 81 Google Scholar
[46]	Kim S J, Jeong J S, Jang H W, Yi H, Yang H, Ju H, Lim J A 2021 Adv. Mater. 33 2100475 Google Scholar
[47]	Wei H, Ni Y, Sun L, Yu H, Gong J, Du Y, Ma M, Han H, Xu W 2021 Nano Energy 81 105648 Google Scholar
[48]	Wang Y, Huang W, Zhang Z, Fan L, Huang Q, Wang J, Zhang Y, Zhang M 2021 Nanoscale 13 11360 Google Scholar
[49]	Yu F, Zhu L Q, Xiao H, Gao W T, Guo Y B 2018 Adv. Funct. Mater. 28 1804025 Google Scholar
[50]	Li Z Y, Zhu L Q, Guo L Q, Ren Z Y, Xiao H, Cai J C 2021 ACS Appl. Mater. Interfaces 13 7784 Google Scholar
[51]	Wang X, Yan Y, Li E, Liu Y, Lai D, Lin Z, Liu Y, Chen H, Guo T 2020 Nano Energy 75 104952 Google Scholar
[52]	Ham S, Kang M, Jang S, Jang J, Choi S, Kim T-W, Wang G 2020 Sci. Adv. 6 eaba1178 Google Scholar
[53]	Jang S, Jang S, Lee E H, Kang M, Wang G, Kim T W 2019 ACS Appl. Mater. Interfaces 11 1071 Google Scholar
[54]	Zhong G K, Zi M F, Ren C L, Xiao Q, Tang M K, Wei L Y, An F, Xie S H, Wang J B, Zhong X L, Huang M Q, Li J Y 2020 Appl. Phys. Lett. 117 092903 Google Scholar
[55]	Ren Y, Yang J Q, Zhou L, Mao J Y, Zhang S R, Zhou Y, Han S T 2018 Adv. Funct. Mater. 28 1805599 Google Scholar
[56]	Kim S, Choi B, Lim M, Yoon J, Lee J, Kim H D, Choi S J 2017 ACS Nano 11 2814 Google Scholar
[57]	Wang T Y, Meng J L, He Z Y, Chen L, Zhu H, Sun Q Q, Ding S J, Zhou P, Zhang D W 2020 Adv. Sci. 7 1903480 Google Scholar
[58]	Meng J L, Wang T Y, Chen L, Sun Q Q, Zhu H, Ji L, Ding S J, Bao W Z, Zhou P, Zhang D W 2021 Nano Energy 83 105815 Google Scholar
[59]	Cao G M, Meng P, Chen J G, Liu H S, Bian R J, Zhu C, Liu F C, Liu Z 2021 Adv. Funct. Mater. 31 2005443 Google Scholar
[60]	Zhu J D, Zhang T, Yang Y C, Huang R 2020 Appl. Phys. Rev. 7 011312 Google Scholar
[61]	He Y L, Zhu L, Zhu Y, Chen C S, Jiang S S, Liu R, Shi Y, Wan Q 2021 Adv. Intell. Syst. 3 2000210 Google Scholar
[62]	Hodgkin A L, Huxley A F 1952 J. Physiol. 117 500 Google Scholar
[63]	Abbott L F 2008 Neuron 60 489 Google Scholar
[64]	Abbott L F 1999 Brain Res. Bull. 50 303 Google Scholar
[65]	Izhikevich E M 2004 IEEE Trans. Neural Netw. 15 1063 Google Scholar
[66]	Burkitt A N 2006 Biol. Cybern. 95 1 Google Scholar
[67]	Sun F, Lu Q, Feng S, Zhang T 2021 ACS Nano 15 3875 Google Scholar
[68]	Choquet D, Triller A 2013 Neuron 80 691 Google Scholar
[69]	Reyes A D 2011 Hear. Res. 279 60 Google Scholar
[70]	Rotman Z, Deng P Y, Klyachko V A 2011 J. Neurosci. 31 14800 Google Scholar
[71]	Fortune E S, Rose G J 2002 J. Physiol. Paris 96 539 Google Scholar
[72]	Fortune E S, Rose G J 2000 J. Neurosci. 20 7122 Google Scholar
[73]	Bliss T V P, Collingridge G L 1993 Nature 361 31 Google Scholar
[74]	Kim M K, Lee J S 2018 ACS Nano 12 1680 Google Scholar
[75]	Lamprecht R, LeDoux J 2004 Nat. Rev. Neurosci. 5 45 Google Scholar
[76]	Fu Y, Kong L A, Chen Y, Wang J, Qian C, Yuan Y, Sun J, Gao Y, Wan Q 2018 ACS Appl. Mater. Interfaces 10 26443 Google Scholar
[77]	Alibart F, Pleutin S, Bichler O, Gamrat C, Serrano-Gotarredona T, Linares-Barranco B, Vuillaume D 2012 Adv. Funct. Mater. 22 609 Google Scholar
[78]	Yang Y, Wen J, Guo L, Wan X, Du P, Feng P, Shi Y, Wan Q 2016 ACS Appl. Mater. Interfaces 8 30281 Google Scholar
[79]	Bear M F, Malenka R C 1994 Curr. Opin. Neurobiol. 4 389 Google Scholar
[80]	Law C C, Cooper L N 1994 Proc. Natl. Acad. Sci. U. S. A. 91 7797 Google Scholar
[81]	Yuan H, Shimotani H, Ye J, Yoon S, Aliah H, Tsukazaki A, Kawasaki M, Iwasa Y 2010 J. Am. Chem. Soc. 132 18402 Google Scholar
[82]	Zhang L L, Zhao X S 2009 Chem. Soc. Rev. 38 2520 Google Scholar
[83]	Wang J, Li Y, Liang R, Zhang Y, Mao W, Yang Y, Ren T L 2017 IEEE Electron Dev. Lett. 38 1496 Google Scholar
[84]	Wan C J, Zhu L Q, Zhou J M, Shi Y, Wan Q 2014 Nanoscale 6 4491 Google Scholar
[85]	Zhou J M, Wan C J, Zhu L Q, Shi Y, Wan Q 2013 IEEE Electron Dev. Lett. 34 1433 Google Scholar
[86]	Liu N, Zhu L Q, Feng P, Wan C J, Liu Y H, Shi Y, Wan Q 2015 Sci Rep 5 18082 Google Scholar
[87]	Wang X L, Shao Y, Wu X, Zhang M N, Li L, Liu W J, Zhang D W, Ding S J 2020 RSC Adv. 10 3572 Google Scholar
[88]	Liang X, Li Z, Liu L, Chen S, Wang X, Pei Y 2020 Appl. Phys. Lett. 116 012102 Google Scholar
[89]	Okaue D, Tanabe I, Ono S, Sakamoto K, Sato T, Imanishi A, Morikawa Y, Takeya J, Fukui K I 2020 J. Phys. Chem. C 124 2543 Google Scholar
[90]	Ono S, Seki S, Hirahara R, Tominari Y, Takeya J 2008 Appl. Phys. Lett. 92 103313 Google Scholar
[91]	Yang J T, Ge C, Du J Y, Huang H Y, He M, Wang C, Lu H B, Yang G Z, Jin K J 2018 Adv. Mater. 34 1801548
[92]	Eguchi K, Matsushita M M, Awaga K 2019 Phys. Chem. Chem. Phys. 21 18823 Google Scholar
[93]	Sharbati M T, Du Y, Torres J, Ardolino N D, Yun M, Xiong F 2018 Adv. Mater. 30 1802353 Google Scholar
[94]	Nikam R D, Kwak M, Lee J, Rajput K G, Hwang H 2020 Adv. Electron. Mater. 6 1901100 Google Scholar
[95]	Qin J K, Zhou F, Wang J, Chen J, Wang C, Guo X, Zhao S, Pei Y, Zhen L, Ye P D, Lau S P, Zhu Y, Xu C Y, Chai Y 2020 ACS Nano 14 10018 Google Scholar
[96]	Zhang C X, Li S, He Y L, Chen C S, Jiang S S, Yang X Q, Wang X R, Pan L J, Wan Q 2020 IEEE Electron Dev. Lett. 41 617 Google Scholar
[97]	Ke S, He Y L, Zhu L, Jiang Z H, Mao H W, Zhu Y X, Wan C J, Wan Q 2021 Adv. Electron. Mater. 7 2100487 Google Scholar
[98]	Chen C, He Y, Zhu L, Zhu Y, Shi Y, Wan Q 2021 IEEE Trans. Electron Dev. 68 3119 Google Scholar
[99]	He Y L, Zhu Y, Chen C S, Liu R, Jiang S S, Zhu L, Shi Y, Wan Q 2020 IEEE Trans. Electron Dev. 67 5216 Google Scholar
[100]	Kim S H, Hong K, Xie W, Lee K H, Zhang S, Lodge T P, Frisbie C D 2013 Adv. Mater. 25 1822 Google Scholar
[101]	Cho J H, Lee J, Xia Y, Kim B, He Y, Renn M J, Lodge T P, Daniel Frisbie C 2008 Nat. Mater. 7 900 Google Scholar
[102]	Lee Y, Oh J Y, Xu W, Kim O, Kim T R, Kang J, Kim Y, Son D, Tok J B H, Park M J, Bao Z, Lee T W 2018 Sci. Adv. 4 eaat7387 Google Scholar
[103]	Molina-Lopez F, Gao T Z, Kraft U, Zhu C, Öhlund T, Pfattner R, Feig V R, Kim Y, Wang S, Yun Y, Bao Z 2019 Nat. Commun. 10 2676 Google Scholar
[104]	Liu L, Xu W, Ni Y, Xu Z, Cui B, Liu J, Wei H, Xu W 2022 ACS Nano 16 2282 Google Scholar
[105]	Zhu Y, Liu G, Xin Z, Fu C, Wan Q, Shan F 2020 ACS Appl. Mater. Interfaces 12 1061 Google Scholar
[106]	Yao B W, Li J, Chen X D, Yu M X, Zhang Z C, Li Y, Lu T B, Zhang J 2021 Adv. Funct. Mater. 31 2100069 Google Scholar
[107]	Ji D, Li T, Zou Y, Chu M, Zhou K, Liu J, Tian G, Zhang Z, Zhang X, Li L, Wu D, Dong H, Miao Q, Fuchs H, Hu W 2018 Nat. Commun. 9 2339 Google Scholar
[108]	Stucchi E, Dell'Erba G, Colpani P, Kim Y H, Caironi M 2018 Adv. Electron. Mater. 4 1800340 Google Scholar
[109]	Grey P, Pereira L, Pereira S, Barquinha P, Cunha I, Martins R, Fortunato E 2016 Adv. Electron. Mater. 2 1500414 Google Scholar
[110]	Singaraju S A, Baby T T, Neuper F, Kruk R, Hagmann J A, Hahn H, Breitung B 2019 ACS Appl. Electron. Mater. 1 1538 Google Scholar
[111]	Zhao D, Fabiano S, Berggren M, Crispin X 2017 Nat. Commun. 8 14214 Google Scholar
[112]	Zhang W, Zhao Q, Yuan J 2018 Angew. Chem. Int. Ed. 57 6754 Google Scholar
[113]	Kim Hyeong J, Chen B, Suo Z, Hayward Ryan C 2020 Science 367 773 Google Scholar
[114]	Ali A, Ahmed S 2018 Int. J. Biol. Macromol. 109 273 Google Scholar
[115]	Elgadir M A, Uddin M S, Ferdosh S, Adam A, Chowdhury A J K, Sarker M Z I 2015 J. Food Drug Anal. 23 619 Google Scholar
[116]	Negm N A, Hefni H H H, Abd-Elaal A A A, Badr E A, Abou Kana M T H 2020 Int. J. Biol. Macromol. 152 681 Google Scholar
[117]	Ways T M M, Lau W M, Khutoryanskiy V V 2018 Polymers 10 267 Google Scholar
[118]	Ali T, Mertens K, Kuhnel K, Rudolph M, Oehler S, Lehninger D, Muller F, Revello R, Hoffmann R, Zimmermann K, Kampfe T, Czernohorsky M, Seidel K, Van Houdt J, Eng L M 2021 Nanotechnology 32 425201 Google Scholar
[119]	Choi Y, Kim J H, Qian C, Kang J, Hersam M C, Park J H, Cho J H 2020 ACS Appl. Mater. Interfaces 12 4707 Google Scholar
[120]	Tsai M F, Jiang J, Shao P W, Lai Y H, Chen J W, Ho S Z, Chen Y C, Tsai D P, Chu Y H 2019 ACS Appl. Mater. Interfaces 11 25882 Google Scholar
[121]	Seo M, Kang M H, Jeon S B, Bae H, Hur J, Jang B C, Yun S, Cho S, Kim W K, Kim M S, Hwang K M, Hong S, Choi S Y, Choi Y K 2018 IEEE Electron Dev. Lett. 39 1445 Google Scholar
[122]	Jung S W, Koo J B, Park C W, Na B S, Oh J Y, Lee S S, Koo K W 2015 J. Vac. Sci. Technol. B 33 051201 Google Scholar
[123]	Hoffman J, Pan X A, Reiner J W, Walker F J, Han J P, Ahn C H, Ma T P 2010 Adv. Mater. 22 2957 Google Scholar
[124]	Nishitani Y, Kaneko Y, Ueda M, Fujii E, Tsujimura A 2013 Jpn. J. Appl. Phys. 52 04CE06 Google Scholar
[125]	Müller J, Böscke T S, Bräuhaus D, Schröder U, Böttger U, Sundqvist J, Kücher P, Mikolajick T, Frey L 2011 Appl. Phys. Lett. 99 112901 Google Scholar
[126]	Dai S L, Zhao Y W, Wang Y, Zhang J Y, Fang L, Jin S, Shao Y L, Huang J 2019 Adv. Funct. Mater. 29 1903700 Google Scholar
[127]	Narayanan Unni K N, de Bettignies R, Dabos-Seignon S, Nunzi J M 2004 Appl. Phys. Lett. 85 1823 Google Scholar
[128]	Kang S J, Park Y J, Bae I, Kim K J, Kim H C, Bauer S, Thomas E L, Park C 2009 Adv. Funct. Mater. 19 2812 Google Scholar
[129]	Kim K L, Lee W, Hwang S K, Joo S H, Cho S M, Song G, Cho S H, Jeong B, Hwang I, Ahn J H, Yu Y J, Shin T J, Kwak S K, Kang S J, Park C 2016 Nano Lett. 16 334 Google Scholar
[130]	Tian B B, Zhong N, Duan C G 2020 Chin. Phys. B 29 097701 Google Scholar
[131]	Park C, Lee K, Koo M, Park C 2021 Adv. Mater. 33 2004999 Google Scholar
[132]	Lee K, Jang S, Kim K L, Koo M, Park C, Lee S, Lee J, Wang G, Park C 2020 Adv. Sci. 7 2001662 Google Scholar
[133]	Yu S 2018 Proc. IEEE 106 260 Google Scholar
[134]	Van Tho L, Baeg K J, Noh Y Y 2016 Nano Converg. 3 10 Google Scholar
[135]	Zhang H, Zhang Y T, Yu Y, Song X X, Zhang H T, Cao M X, Che Y L, Dai H T, Yang J B, Yao J Q 2017 ACS Photonics 4 2220 Google Scholar
[136]	Cho S W, Kwon S M, Kim Y H, Park S K 2021 Adv. Intell. Syst. 3 2000162 Google Scholar
[137]	Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T 2009 Science 326 1516 Google Scholar
[138]	He Y L, Liu R, Jiang S S, Chen C S, Zhu L, Shi Y, Wan Q 2020 J. Phys. D: Appl. Phys. 53 215106 Google Scholar
[139]	Yang X X, Yu J R, Zhao J, Chen Y H, Gao G Y, Wang Y F, Sun Q J, Wang Z L 2020 Adv. Funct. Mater. 30 2002506 Google Scholar
[140]	Zhao T S, Zhao C, Xu W Y, Liu Y N, Gao H, Mitrovic I Z, Lim E G, Yang L, Zhao C Z 2021 Adv. Funct. Mater. 31 2106000 Google Scholar
[141]	Park E, Kim M, Kim T S, Kim I S, Park J, Kim J, Jeong Y, Lee S, Kim I, Park J K, Kim G T, Chang J, Kang K, Kwak J Y 2020 Nanoscale 12 24503 Google Scholar
[142]	Feng G, Jiang J, Zhao Y, Wang S, Liu B, Yin K, Niu D, Li X, Chen Y, Duan H, Yang J, He J, Gao Y, Wan Q 2020 Adv. Mater. 32 1906171 Google Scholar
[143]	Basbaum A I, Bautista D M, Scherrer G, Julius D 2009 Cell 139 267 Google Scholar
[144]	Lee Y, Lee T W 2019 Accounts Chem. Res. 52 964 Google Scholar
[145]	Hou Y X, Li Y, Zhang Z C, Li J Q, Qi D H, Chen X D, Wang J J, Yao B W, Yu M X, Lu T B, Zhang J 2021 ACS Nano 15 1497 Google Scholar
[146]	Li Y, Xuan Z H, Lu J K, Wang Z R, Zhang X M, Wu Z H, Wang Y Z, Xu H, Dou C M, Kang Y, Liu Q, Lv H B, Shang D S 2021 Adv. Funct. Mater. 31 2100042 Google Scholar
[147]	Jang Y W, Kang J, Jo J W, Kim Y H, Kim J, Park S K 2021 Sens. Actuator B: Chem. 342 130058 Google Scholar
[148]	Yang J C, Mun J, Kwon S Y, Park S, Bao Z, Park S 2019 Adv. Mater. 31 1904765 Google Scholar
[149]	Wan C J, Liu Y H, Feng P, Wang W, Zhu L Q, Liu Z P, Shi Y, Wan Q 2016 Adv. Mater. 28 5878 Google Scholar
[150]	Kim Y, Chortos A, Xu W, Liu Y, Oh J Y, Son D, Kang J, Foudeh A M, Zhu C, Lee Y, Niu S, Liu J, Pfattner R, Bao Z, Lee T W 2018 Science 360 998 Google Scholar
[151]	Jiang S, He Y, Liu R, Chen C, Zhu L, Zhu Y, Shi Y, Wan Q 2021 IEEE T. Electron Dev. 68 415 Google Scholar
[152]	Ling H, Koutsouras D A, Kazemzadeh S, van de Burgt Y, Yan F, Gkoupidenis P 2020 Appl. Phys. Rev. 7 011307 Google Scholar
[153]	Zhu Q B, Li B, Yang D D, Liu C, Feng S, Chen M L, Sun Y, Tian Y N, Su X, Wang X M, Qiu S, Li Q W, Li X M, Zeng H B, Cheng H M, Sun D M 2021 Nat. Commun. 12 1798 Google Scholar
[154]	Gao S, Liu G, Yang H, Hu C, Chen Q, Gong G, Xue W, Yi X, Shang J, Li R W 2019 ACS Nano 13 2634 Google Scholar
[155]	Wang G, Wang R, Kong W, Zhang J 2018 Cogn. Neurodynamics 12 615 Google Scholar
[156]	Yamamoto Y, Harada S, Yamamoto D, Honda W, Arie T, Akita S, Takei K 2016 Sci. Adv. 2 e1601473 Google Scholar
[157]	Wu X, Li E, Liu Y, Lin W, Yu R, Chen G, Hu Y, Chen H, Guo T 2021 Nano Energy 85 106000 Google Scholar
[158]	Wan C, Cai P, Guo X, Wang M, Matsuhisa N, Yang L, Lv Z, Luo Y, Loh X J, Chen X 2020 Nat. Commun. 11 4602 Google Scholar
[159]	Shastri B J, Tait A N, de Lima T F, Pernice W H P, Bhaskaran H, Wright C D, Prucnal P R 2021 Nat. Photonics 15 102 Google Scholar
[160]	Song S, Kim J, Kwon S M, Jo J W, Park S K, Kim Y-H 2021 Adv. Intell. Syst. 3 2000119 Google Scholar
[161]	Komar M S 2017 Autom. Control Comp. Sci. 51 701 Google Scholar

Cited By

图 1 生物神经元(a)和生物突触(b)的结构示意图^[66]

Figure 1. Schematic diagram of biological neuron (a) and biological synapse (b)^[66].

DownLoad: Full-Size Img PowerPoint

图 2 (a)基于多栅 IZO 神经形态晶体管的柔性 pH 传感器的示意图^[86]; (b) 神经纤维-OECT 的装置结构示意图和 OECT-神经纤维的照片, 插图: 离子在可渗透半导体中的掺杂机制示意图; (c) P3CT-神经纤维的 PSC 作为施加电压尖峰之间的时间间隔(Δt)的函数 (V_GS = –0.7 V, 100 ms); (d) P3CT-和 P3HT-神经纤维中超过 45 个周期的LTP和LTD循环测试; (e) 生物神经网络和神经纤维晶体管网络示意图(左), 10 × 10 P3CT-神经纤维阵列的照片(右)^[46]

Figure 2. (a) Schematic illustration of the flexible pH sensor based on an IZO neuromorphic transistor with multiple gate electrodes^[86]; (b) schematic of the device architecture for neurofiber-OECT and photograph of OECT-neurofiber, inset: schematic of the doping mechanism by ions in a permeable semiconductor; (c) PSC of a P3CT-neurofiber as a function of the time interval (Δt) between applied voltage spikes (V_GS = –0.7 V, 100 ms); (d) cycle test of LTP and LTD in P3CT- and P3HT-neurofibers over 45 cycles; (e) schematic of biological neural network and neurofiber transistor network (left), photograph of a 10 × 10 array of P3CT-neurofibers (right)^[46].

DownLoad: Full-Size Img PowerPoint

图 3 (a) LiClO₄溶解在PEO中作为栅极电解质的突触晶体管的结构示意图; (b) 双脉冲易化, 插图: PPF指数被绘制为两个脉冲之间时间间隔的函数; (c)由40个突触前脉冲触发的EPSC; (d) LTP和LTD的可重复性^[105]

Figure 3. (a) Schematic of synaptic transistors with LiClO₄ dissolved in PEO as gate electrolyte; (b) paired-pulse facilitation, inset: PPF index is plotted as a function of time interval between the two pulses; (c) EPSC triggered by 40 presynaptic pluses; (d) repeatability of LTP and LTD^[105].

DownLoad: Full-Size Img PowerPoint

图 4 (a) 自支撑光电神经形态晶体管示意图; (b) 光刺激角膜伤害感受器示意图; (c) IGZO 晶体管中光学响应的能带图; (d) PCN“受伤”前后实验测量的光电流; (e) 利用V_G = 0.1 V模拟的中枢敏化, P_T降至 4.98 nW/µm²; (f) 利用V_G = –0.1 V 模拟的镇痛作用, P_T 增大到 17.62 nW/µm^2[97]

Figure 4. (a) Schematic diagram of the freestanding photoelectric neuromorphic transistor; (b) schematic illustration of photoexcited corneal nociceptor; (c) energy-band diagrams of optical responses in IGZO-based transistor; (d) experimentally measured photocurrents of the PCN before and after “wounded”; (e) central sensitization simulated by V_G = 0.1 V with P_T reduced to 4.98 nW/µm² ; (f) analgesic effect simulated by V_G = –0.1 V with P_T increased to 17.62 nW/µm^2[97].

DownLoad: Full-Size Img PowerPoint

图 5 (a) 全无机柔性FeFET示意图; (b) 不同脉宽的突触前脉冲电压触发的EPSC; 不同弯曲半径(c)、不同弯曲循环次数(d)、不同弯曲时间(e)下的LTP和LTD; (f)—(h)对应的MNIST数字识别准确率^[54]

Figure 5. (a) Schematic of the all-inorganic flexible FeFET; (b) EPSC triggered by presynaptic voltage pulse with different spike widths; LTP and LTD with the different bending radius, (c) different bending cycles (d), and different bending durations (e); (f)–(h) the corresponding MNIST digit recognition accuracy^[54].

DownLoad: Full-Size Img PowerPoint

图 6 (a) 以P(VDF-TrFE)薄膜为栅介质的自支撑有机神经形态晶体管的结构示意图; (b) 贴合在大脑形状模型(上图)和弯曲半径为50 µm的FONTs(下图)照片; (c) 在6000次突触前脉冲期间, 折叠FONTs的LTP和LTD的重复转换, 上左、上右图分别代表最初和最后的10个LTP, LTD循环^[53]

Figure 6. (a) Schematic diagram of freestanding ferroelectric organic neuromorphic transistors with a P(VDF-TrFE) film as the dielectric layer; (b) photo images of the FONTs on the brain-shaped mold and folded FONTs with a bending radius of 50 µm (lower panel); (c) repetitive transition between the LTP and LTD in the folded FONTs during 6000 spikes of presynaptic pulses (±30 V for 500 ms), the left and the right in upper graph shows the LTP and LTD during the initial and final 10 cycles, respectively^[53].

DownLoad: Full-Size Img PowerPoint

图 7 (a) 生物触觉感知系统示意图(左)和人工触觉学习铁电皮肤的器件结构示意图(右); (b)三种不同手写风格(N₁, N₂ 和 N₃)的“N”图案示意图(左)和用于识别手写图案的单层神经网络的组成部分(右)^[132]

Figure 7. (a) Schematic of the biological tactile perception system (left) and schematic device structure of the artificial tactile learning ferroelectric skin (right); (b) schematic illustrations of “N” patterns with three different handwriting styles (N₁, N₂, and N₃) (left) and constituents of a single-layer neural network used to recognize handwriting pattern (right)^[132].

DownLoad: Full-Size Img PowerPoint

图 8 (a) 光电双调控的柔性人工异突触示意图; (b) 由两个连续光脉冲序列模拟的学习-遗忘-再学习行为; (c)光照条件下, 电脉冲产生的LTP和LTD, 并且通过单独的电脉冲获得进一步的抑制; (d) 在平坦状态和弯曲状态 (R = 10 mm) 下, PSC作为突触前脉冲数的函数^[57]; (e) C₆₀ 浮栅突触晶体管的示意图(左)和横截面 SEM 形貌图像(右)^[55]

Figure 8. (a) Schematic diagram of flexible artificial heterosynapse with photoelectric dual modulation; (b) learning, forgetting and relearning behaviors emulated by two sequences of consecutive light pulses; (c ) electrical pulses induced the LTP and LTD under illumination of light, further depression was obtained by electrical pulse independently; (d) PSC as a function of pre-synaptic pulse number in a flat states and curved state (R = 10 mm)^[57]; (e) schematic representation (left) and cross-sectional SEM topography image (right) of a C₆₀ floating gate synaptic transistor^[55].

DownLoad: Full-Size Img PowerPoint

图 9 (a) 以CNTs/CsPbBr3-QDs为沟道的光电晶体管示意图; (b) 当观察到陌生和熟悉的面孔时, 人类视觉系统印象的示意图; (c) 不同训练脉冲数的训练权重结果; (d) 模拟人脸的学习过程^[153]

Figure 9. (a) Schematic diagram of the phototransistor with a CNTs/CsPbBr3-QDs channel; (b) schematics illustration of the impression of human visual systems when unfamiliar and familiar faces are observed; (c) training weight results with different number of training pulses; (d) simulation of the learning process of a human face^[153].

DownLoad: Full-Size Img PowerPoint

图 10 (a) 视觉-触觉融合的双模人工感觉神经元示意图; (b) 用于肌肉和机械手驱动的视觉-触觉融合示意图; (c)视觉(顶部, 粉红色)和触觉(底部, 蓝色)反馈分别用于在z轴和y轴上推断“是”或“否”; (d) 单感觉模式和双感觉模式各自的识别率^[158]

Figure 10. (a) Schematic illustration of bimodal artificial sensory neuron with visual-haptic fusion; (b) schematic diagram of visual-haptic fusion for muscle and robotic hand actuation; (c) visual (top, pink) and haptic (bottom, blue) feedback used to infer “YES” or “NO” in z-axis and y-axis respectively; (d) the recognition rates of unimodal and bimodal modes, respectively^[158].

DownLoad: Full-Size Img PowerPoint

表 1 不同类型柔性突触晶体管比较

Table 1. Comparison of different types of flexible synaptic transistors.

器件类型	衬底/栅介质/沟道	弯曲半径/mm	弯曲次数	生物相容性	神经功能	文献
电解质栅晶体管	PET/Al₂O₃/IWO	20	—	—	EPSC、PPF、高通滤波	[44]
	PET/LiClO₄/MoSSe	3	1000	—	图像识别、存储和处理	[45]
	—/离子凝胶/P3 CT	—	—	—	LIF、语音识别	[46]
	PEN/LiClO₄+PEO/SnO₂	8	1000	—	学习规则、痛觉感知	[47]
	PEN/SiO₂+PVA/CNTs	3	1000	—	STP、LTP、LTD	[48]
	PI/壳聚糖/ITO	20	—	是	STDP、学习规则	[49]
	PET/蛋白质/ITO	10	3500	是	神经递质释放动力学	[50]
	PDMS/离子凝胶/P3 HT	—	—	—	学习规则	[51]
铁电晶体管	—/P(VDF-TrFE)/并五苯	2.5	100	—	SRDP、STDP、图像识别	[52]
	—/P(VDF-TrFE)/并五苯	5×10^–5	—	—	STDP	[53]
	云母/PZT/IGZO	4	400	—	数字识别	[54]
浮栅晶体管	PET/Al₂O₃+PMMA:C₆₀/并五苯	10	500	—	STP、LTP	[55]
	纸/Au+SiO_x/CNTs	—	—	—	STDP、图像识别	[56]
	PET/ZrO₂+Al₂O₃/MoS₂	10	—	—	学习规则	[57]
	PET/黑磷-QD+Al₂O₃/MoSSe	5	1000	—	学习规则	[58]

DownLoad: CSV

[1]	Jung Y H, Park B, Kim J U, Kim T I 2019 Adv. Mater. 31 1803637 Google Scholar
[2]	Lumpkin E A, Caterina M J 2007 Nature 445 858 Google Scholar
[3]	Abraira Victoria E, Ginty David D 2013 Neuron 79 618 Google Scholar
[4]	Wan C J, Zhu L Q, Liu Y H, Feng P, Liu Z P, Cao H L, Xiao P, Shi Y, Wan Q 2016 Adv. Mater. 28 3557 Google Scholar
[5]	Indiveri G, Chicca E, Douglas R J 2009 Cognit. Comput. 1 119 Google Scholar
[6]	James C D, Aimone J B, Miner N E, Vineyard C M, Rothganger F H, Carlson K D, Mulder S A, Draelos T J, Faust A, Marinella M J, Naegle J H, Plimpton S J 2017 Biol. Inspired Cogn. Archit. 19 49
[7]	Ho V M, Lee J A, Martin K C 2011 Science 334 623 Google Scholar
[8]	Machens Christian K 2012 Science 338 1156 Google Scholar
[9]	Kuzum D, Yu S, Wong H S 2013 Nanotechnology 24 382001 Google Scholar
[10]	Khodagholy D, Gelinas J N, Thesen T, Doyle W, Devinsky O, Malliaras G G, Buzsáki G 2015 Nat. Neurosci. 18 310 Google Scholar
[11]	Viventi J, Kim D H, Vigeland L, Frechette E S, Blanco J A, Kim Y S, Avrin A E, Tiruvadi V R, Hwang S W, Vanleer A C, Wulsin D F, Davis K, Gelber C E, Palmer L, Van der Spiegel J, Wu J, Xiao J, Huang Y, Contreras D, Rogers J A, Litt B 2011 Nat. Neurosci. 14 1599 Google Scholar
[12]	Xu L, Gutbrod S R, Bonifas A P, Su Y, Sulkin M S, Lu N, Chung H J, Jang K I, Liu Z, Ying M, Lu C, Webb R C, Kim J S, Laughner J I, Cheng H, Liu Y, Ameen A, Jeong J W, Kim G T, Huang Y, Efimov I R, Rogers J A 2014 Nat. Commun. 5 3329 Google Scholar
[13]	Lipomi D J, Vosgueritchian M, Tee B C K, Hellstrom S L, Lee J A, Fox C H, Bao Z 2011 Nat. Nanotechnol. 6 788 Google Scholar
[14]	Wang C, Hwang D, Yu Z, Takei K, Park J, Chen T, Ma B, Javey A 2013 Nat. Mater. 12 899 Google Scholar
[15]	Kim D H, Ghaffari R, Lu N, ’et al. 2012 Proc. Natl. Acad. Sci. U. S. A. 109 19910 Google Scholar
[16]	Moore D R, Shannon R V 2009 Nat. Neurosci. 12 686 Google Scholar
[17]	Minev Ivan R, Musienko P, Hirsch A, et al. 2015 Science 347 159 Google Scholar
[18]	Luo Y H L, da Cruz L 2016 Prog. Retinal Eye Res. 50 89 Google Scholar
[19]	Terabe K, Hasegawa T, Nakayama T, Aono M 2005 Nature 433 47 Google Scholar
[20]	Aono M, Hasegawa T 2010 Proc. IEEE 98 2228 Google Scholar
[21]	Hasegawa T, Ohno T, Terabe K, Tsuruoka T, Nakayama T, Gimzewski J K, Aono M 2010 Adv. Mater. 22 1831 Google Scholar
[22]	Zhao M, Li R, Xue J 2020 AIP Adv. 10 045003 Google Scholar
[23]	Jeon Y R, Choi J, Kwon J D, Park M H, Kim Y, Choi C 2021 ACS Appl. Mater. Interfaces 13 10161 Google Scholar
[24]	Tuma T, Pantazi A, Le Gallo M, Sebastian A, Eleftheriou E 2016 Nat. Nanotechnol. 11 693 Google Scholar
[25]	Hua L, Zhu H, Shi K, Zhong S, Tang Y, Liu Y 2021 IEEE Trans. Circuits Syst. I, Reg. Papers 68 1599 Google Scholar
[26]	Yao P, Wu H, Gao B, Tang J, Zhang Q, Zhang W, Yang J J, Qian H 2020 Nature 577 641 Google Scholar
[27]	Wen S, Wei H, Yan Z, Guo Z, Yang Y, Huang T, Chen Y 2020 IEEE Trans. Netw. Sci. Eng. 7 1431 Google Scholar
[28]	Du F, Lu J G 2021 Appl. Math. Comput. 389 125616
[29]	Grollier J, Querlioz D, Camsari K Y, Everschor-Sitte K, Fukami S, Stiles M D 2020 Nat. Electron. 3 360 Google Scholar
[30]	Jiang J, Guo J, Wan X, Yang Y, Xie H, Niu D, Yang J, He J, Gao Y, Wan Q 2017 Small 13 1700933 Google Scholar
[31]	Jiang S S, He Y L, Liu R, Zhang C X, Shi Y, Wan Q 2021 J. Phys. D-Appl. Phys. 54 185106 Google Scholar
[32]	Beck M E, Shylendra A, Sangwan V K, Guo S, Gaviria Rojas W A, Yoo H, Bergeron H, Su K, Trivedi A R, Hersam M C 2020 Nat. Commun. 11 1565 Google Scholar
[33]	Taube Navaraj W, Garcia Nunez C, Shakthivel D, Vinciguerra V, Labeau F, Gregory D H, Dahiya R 2017 Front. Neurosci. 11 501 Google Scholar
[34]	Cho Y, Lee J Y, Yu E, Han J H, Baek M H, Cho S, Park B G 2019 Micromachines 10 32 Google Scholar
[35]	Dai S, Wu X, Liu D, Chu Y, Wang K, Yang B, Huang J 2018 ACS Appl. Mater. Interfaces 10 21472 Google Scholar
[36]	John R A, Liu F, Nguyen Anh C, Kulkarni M R, Zhu C, Fu Q, Basu A, Liu Z, Mathews N 2018 Adv. Mater. 30 1800220 Google Scholar
[37]	Kim M K, Lee J S 2019 Nano Lett. 19 2044 Google Scholar
[38]	Nishitani Y, Kaneko Y, Ueda M, Morie T, Fujii E 2012 J. Appl. Phys. 111 124108 Google Scholar
[39]	Sun J, Oh S, Choi Y, Seo S, Oh M J, Lee M, Lee W B, Yoo P J, Cho J H, Park J H 2018 Adv. Funct. Mater. 28 1804397 Google Scholar
[40]	Wang J, Chen Y, Kong L A, Fu Y, Gao Y, Sun J 2018 Appl. Phys. Lett. 113 151101 Google Scholar
[41]	Jiang J, Hu W, Xie D, Yang J, He J, Gao Y, Wan Q 2019 Nanoscale 11 1360 Google Scholar
[42]	Park H L, Lee Y, Kim N, Seo D G, Go G T, Lee T W 2020 Adv. Mater. 32 1903558 Google Scholar
[43]	Rogers J A, Someya T, Huang Y 2010 Science 327 1603 Google Scholar
[44]	Tiwari N, Rajput M, John R A, Kulkarni M R, Nguyen A C, Mathews N 2018 ACS Appl. Mater. Interfaces 10 30506 Google Scholar
[45]	Meng J, Wang T, Zhu H, Ji L, Bao W, Zhou P, Chen L, Sun Q Q, Zhang D W 2022 Nano Lett. 22 81 Google Scholar
[46]	Kim S J, Jeong J S, Jang H W, Yi H, Yang H, Ju H, Lim J A 2021 Adv. Mater. 33 2100475 Google Scholar
[47]	Wei H, Ni Y, Sun L, Yu H, Gong J, Du Y, Ma M, Han H, Xu W 2021 Nano Energy 81 105648 Google Scholar
[48]	Wang Y, Huang W, Zhang Z, Fan L, Huang Q, Wang J, Zhang Y, Zhang M 2021 Nanoscale 13 11360 Google Scholar
[49]	Yu F, Zhu L Q, Xiao H, Gao W T, Guo Y B 2018 Adv. Funct. Mater. 28 1804025 Google Scholar
[50]	Li Z Y, Zhu L Q, Guo L Q, Ren Z Y, Xiao H, Cai J C 2021 ACS Appl. Mater. Interfaces 13 7784 Google Scholar
[51]	Wang X, Yan Y, Li E, Liu Y, Lai D, Lin Z, Liu Y, Chen H, Guo T 2020 Nano Energy 75 104952 Google Scholar
[52]	Ham S, Kang M, Jang S, Jang J, Choi S, Kim T-W, Wang G 2020 Sci. Adv. 6 eaba1178 Google Scholar
[53]	Jang S, Jang S, Lee E H, Kang M, Wang G, Kim T W 2019 ACS Appl. Mater. Interfaces 11 1071 Google Scholar
[54]	Zhong G K, Zi M F, Ren C L, Xiao Q, Tang M K, Wei L Y, An F, Xie S H, Wang J B, Zhong X L, Huang M Q, Li J Y 2020 Appl. Phys. Lett. 117 092903 Google Scholar
[55]	Ren Y, Yang J Q, Zhou L, Mao J Y, Zhang S R, Zhou Y, Han S T 2018 Adv. Funct. Mater. 28 1805599 Google Scholar
[56]	Kim S, Choi B, Lim M, Yoon J, Lee J, Kim H D, Choi S J 2017 ACS Nano 11 2814 Google Scholar
[57]	Wang T Y, Meng J L, He Z Y, Chen L, Zhu H, Sun Q Q, Ding S J, Zhou P, Zhang D W 2020 Adv. Sci. 7 1903480 Google Scholar
[58]	Meng J L, Wang T Y, Chen L, Sun Q Q, Zhu H, Ji L, Ding S J, Bao W Z, Zhou P, Zhang D W 2021 Nano Energy 83 105815 Google Scholar
[59]	Cao G M, Meng P, Chen J G, Liu H S, Bian R J, Zhu C, Liu F C, Liu Z 2021 Adv. Funct. Mater. 31 2005443 Google Scholar
[60]	Zhu J D, Zhang T, Yang Y C, Huang R 2020 Appl. Phys. Rev. 7 011312 Google Scholar
[61]	He Y L, Zhu L, Zhu Y, Chen C S, Jiang S S, Liu R, Shi Y, Wan Q 2021 Adv. Intell. Syst. 3 2000210 Google Scholar
[62]	Hodgkin A L, Huxley A F 1952 J. Physiol. 117 500 Google Scholar
[63]	Abbott L F 2008 Neuron 60 489 Google Scholar
[64]	Abbott L F 1999 Brain Res. Bull. 50 303 Google Scholar
[65]	Izhikevich E M 2004 IEEE Trans. Neural Netw. 15 1063 Google Scholar
[66]	Burkitt A N 2006 Biol. Cybern. 95 1 Google Scholar
[67]	Sun F, Lu Q, Feng S, Zhang T 2021 ACS Nano 15 3875 Google Scholar
[68]	Choquet D, Triller A 2013 Neuron 80 691 Google Scholar
[69]	Reyes A D 2011 Hear. Res. 279 60 Google Scholar
[70]	Rotman Z, Deng P Y, Klyachko V A 2011 J. Neurosci. 31 14800 Google Scholar
[71]	Fortune E S, Rose G J 2002 J. Physiol. Paris 96 539 Google Scholar
[72]	Fortune E S, Rose G J 2000 J. Neurosci. 20 7122 Google Scholar
[73]	Bliss T V P, Collingridge G L 1993 Nature 361 31 Google Scholar
[74]	Kim M K, Lee J S 2018 ACS Nano 12 1680 Google Scholar
[75]	Lamprecht R, LeDoux J 2004 Nat. Rev. Neurosci. 5 45 Google Scholar
[76]	Fu Y, Kong L A, Chen Y, Wang J, Qian C, Yuan Y, Sun J, Gao Y, Wan Q 2018 ACS Appl. Mater. Interfaces 10 26443 Google Scholar
[77]	Alibart F, Pleutin S, Bichler O, Gamrat C, Serrano-Gotarredona T, Linares-Barranco B, Vuillaume D 2012 Adv. Funct. Mater. 22 609 Google Scholar
[78]	Yang Y, Wen J, Guo L, Wan X, Du P, Feng P, Shi Y, Wan Q 2016 ACS Appl. Mater. Interfaces 8 30281 Google Scholar
[79]	Bear M F, Malenka R C 1994 Curr. Opin. Neurobiol. 4 389 Google Scholar
[80]	Law C C, Cooper L N 1994 Proc. Natl. Acad. Sci. U. S. A. 91 7797 Google Scholar
[81]	Yuan H, Shimotani H, Ye J, Yoon S, Aliah H, Tsukazaki A, Kawasaki M, Iwasa Y 2010 J. Am. Chem. Soc. 132 18402 Google Scholar
[82]	Zhang L L, Zhao X S 2009 Chem. Soc. Rev. 38 2520 Google Scholar
[83]	Wang J, Li Y, Liang R, Zhang Y, Mao W, Yang Y, Ren T L 2017 IEEE Electron Dev. Lett. 38 1496 Google Scholar
[84]	Wan C J, Zhu L Q, Zhou J M, Shi Y, Wan Q 2014 Nanoscale 6 4491 Google Scholar
[85]	Zhou J M, Wan C J, Zhu L Q, Shi Y, Wan Q 2013 IEEE Electron Dev. Lett. 34 1433 Google Scholar
[86]	Liu N, Zhu L Q, Feng P, Wan C J, Liu Y H, Shi Y, Wan Q 2015 Sci Rep 5 18082 Google Scholar
[87]	Wang X L, Shao Y, Wu X, Zhang M N, Li L, Liu W J, Zhang D W, Ding S J 2020 RSC Adv. 10 3572 Google Scholar
[88]	Liang X, Li Z, Liu L, Chen S, Wang X, Pei Y 2020 Appl. Phys. Lett. 116 012102 Google Scholar
[89]	Okaue D, Tanabe I, Ono S, Sakamoto K, Sato T, Imanishi A, Morikawa Y, Takeya J, Fukui K I 2020 J. Phys. Chem. C 124 2543 Google Scholar
[90]	Ono S, Seki S, Hirahara R, Tominari Y, Takeya J 2008 Appl. Phys. Lett. 92 103313 Google Scholar
[91]	Yang J T, Ge C, Du J Y, Huang H Y, He M, Wang C, Lu H B, Yang G Z, Jin K J 2018 Adv. Mater. 34 1801548
[92]	Eguchi K, Matsushita M M, Awaga K 2019 Phys. Chem. Chem. Phys. 21 18823 Google Scholar
[93]	Sharbati M T, Du Y, Torres J, Ardolino N D, Yun M, Xiong F 2018 Adv. Mater. 30 1802353 Google Scholar
[94]	Nikam R D, Kwak M, Lee J, Rajput K G, Hwang H 2020 Adv. Electron. Mater. 6 1901100 Google Scholar
[95]	Qin J K, Zhou F, Wang J, Chen J, Wang C, Guo X, Zhao S, Pei Y, Zhen L, Ye P D, Lau S P, Zhu Y, Xu C Y, Chai Y 2020 ACS Nano 14 10018 Google Scholar
[96]	Zhang C X, Li S, He Y L, Chen C S, Jiang S S, Yang X Q, Wang X R, Pan L J, Wan Q 2020 IEEE Electron Dev. Lett. 41 617 Google Scholar
[97]	Ke S, He Y L, Zhu L, Jiang Z H, Mao H W, Zhu Y X, Wan C J, Wan Q 2021 Adv. Electron. Mater. 7 2100487 Google Scholar
[98]	Chen C, He Y, Zhu L, Zhu Y, Shi Y, Wan Q 2021 IEEE Trans. Electron Dev. 68 3119 Google Scholar
[99]	He Y L, Zhu Y, Chen C S, Liu R, Jiang S S, Zhu L, Shi Y, Wan Q 2020 IEEE Trans. Electron Dev. 67 5216 Google Scholar
[100]	Kim S H, Hong K, Xie W, Lee K H, Zhang S, Lodge T P, Frisbie C D 2013 Adv. Mater. 25 1822 Google Scholar
[101]	Cho J H, Lee J, Xia Y, Kim B, He Y, Renn M J, Lodge T P, Daniel Frisbie C 2008 Nat. Mater. 7 900 Google Scholar
[102]	Lee Y, Oh J Y, Xu W, Kim O, Kim T R, Kang J, Kim Y, Son D, Tok J B H, Park M J, Bao Z, Lee T W 2018 Sci. Adv. 4 eaat7387 Google Scholar
[103]	Molina-Lopez F, Gao T Z, Kraft U, Zhu C, Öhlund T, Pfattner R, Feig V R, Kim Y, Wang S, Yun Y, Bao Z 2019 Nat. Commun. 10 2676 Google Scholar
[104]	Liu L, Xu W, Ni Y, Xu Z, Cui B, Liu J, Wei H, Xu W 2022 ACS Nano 16 2282 Google Scholar
[105]	Zhu Y, Liu G, Xin Z, Fu C, Wan Q, Shan F 2020 ACS Appl. Mater. Interfaces 12 1061 Google Scholar
[106]	Yao B W, Li J, Chen X D, Yu M X, Zhang Z C, Li Y, Lu T B, Zhang J 2021 Adv. Funct. Mater. 31 2100069 Google Scholar
[107]	Ji D, Li T, Zou Y, Chu M, Zhou K, Liu J, Tian G, Zhang Z, Zhang X, Li L, Wu D, Dong H, Miao Q, Fuchs H, Hu W 2018 Nat. Commun. 9 2339 Google Scholar
[108]	Stucchi E, Dell'Erba G, Colpani P, Kim Y H, Caironi M 2018 Adv. Electron. Mater. 4 1800340 Google Scholar
[109]	Grey P, Pereira L, Pereira S, Barquinha P, Cunha I, Martins R, Fortunato E 2016 Adv. Electron. Mater. 2 1500414 Google Scholar
[110]	Singaraju S A, Baby T T, Neuper F, Kruk R, Hagmann J A, Hahn H, Breitung B 2019 ACS Appl. Electron. Mater. 1 1538 Google Scholar
[111]	Zhao D, Fabiano S, Berggren M, Crispin X 2017 Nat. Commun. 8 14214 Google Scholar
[112]	Zhang W, Zhao Q, Yuan J 2018 Angew. Chem. Int. Ed. 57 6754 Google Scholar
[113]	Kim Hyeong J, Chen B, Suo Z, Hayward Ryan C 2020 Science 367 773 Google Scholar
[114]	Ali A, Ahmed S 2018 Int. J. Biol. Macromol. 109 273 Google Scholar
[115]	Elgadir M A, Uddin M S, Ferdosh S, Adam A, Chowdhury A J K, Sarker M Z I 2015 J. Food Drug Anal. 23 619 Google Scholar
[116]	Negm N A, Hefni H H H, Abd-Elaal A A A, Badr E A, Abou Kana M T H 2020 Int. J. Biol. Macromol. 152 681 Google Scholar
[117]	Ways T M M, Lau W M, Khutoryanskiy V V 2018 Polymers 10 267 Google Scholar
[118]	Ali T, Mertens K, Kuhnel K, Rudolph M, Oehler S, Lehninger D, Muller F, Revello R, Hoffmann R, Zimmermann K, Kampfe T, Czernohorsky M, Seidel K, Van Houdt J, Eng L M 2021 Nanotechnology 32 425201 Google Scholar
[119]	Choi Y, Kim J H, Qian C, Kang J, Hersam M C, Park J H, Cho J H 2020 ACS Appl. Mater. Interfaces 12 4707 Google Scholar
[120]	Tsai M F, Jiang J, Shao P W, Lai Y H, Chen J W, Ho S Z, Chen Y C, Tsai D P, Chu Y H 2019 ACS Appl. Mater. Interfaces 11 25882 Google Scholar
[121]	Seo M, Kang M H, Jeon S B, Bae H, Hur J, Jang B C, Yun S, Cho S, Kim W K, Kim M S, Hwang K M, Hong S, Choi S Y, Choi Y K 2018 IEEE Electron Dev. Lett. 39 1445 Google Scholar
[122]	Jung S W, Koo J B, Park C W, Na B S, Oh J Y, Lee S S, Koo K W 2015 J. Vac. Sci. Technol. B 33 051201 Google Scholar
[123]	Hoffman J, Pan X A, Reiner J W, Walker F J, Han J P, Ahn C H, Ma T P 2010 Adv. Mater. 22 2957 Google Scholar
[124]	Nishitani Y, Kaneko Y, Ueda M, Fujii E, Tsujimura A 2013 Jpn. J. Appl. Phys. 52 04CE06 Google Scholar
[125]	Müller J, Böscke T S, Bräuhaus D, Schröder U, Böttger U, Sundqvist J, Kücher P, Mikolajick T, Frey L 2011 Appl. Phys. Lett. 99 112901 Google Scholar
[126]	Dai S L, Zhao Y W, Wang Y, Zhang J Y, Fang L, Jin S, Shao Y L, Huang J 2019 Adv. Funct. Mater. 29 1903700 Google Scholar
[127]	Narayanan Unni K N, de Bettignies R, Dabos-Seignon S, Nunzi J M 2004 Appl. Phys. Lett. 85 1823 Google Scholar
[128]	Kang S J, Park Y J, Bae I, Kim K J, Kim H C, Bauer S, Thomas E L, Park C 2009 Adv. Funct. Mater. 19 2812 Google Scholar
[129]	Kim K L, Lee W, Hwang S K, Joo S H, Cho S M, Song G, Cho S H, Jeong B, Hwang I, Ahn J H, Yu Y J, Shin T J, Kwak S K, Kang S J, Park C 2016 Nano Lett. 16 334 Google Scholar
[130]	Tian B B, Zhong N, Duan C G 2020 Chin. Phys. B 29 097701 Google Scholar
[131]	Park C, Lee K, Koo M, Park C 2021 Adv. Mater. 33 2004999 Google Scholar
[132]	Lee K, Jang S, Kim K L, Koo M, Park C, Lee S, Lee J, Wang G, Park C 2020 Adv. Sci. 7 2001662 Google Scholar
[133]	Yu S 2018 Proc. IEEE 106 260 Google Scholar
[134]	Van Tho L, Baeg K J, Noh Y Y 2016 Nano Converg. 3 10 Google Scholar
[135]	Zhang H, Zhang Y T, Yu Y, Song X X, Zhang H T, Cao M X, Che Y L, Dai H T, Yang J B, Yao J Q 2017 ACS Photonics 4 2220 Google Scholar
[136]	Cho S W, Kwon S M, Kim Y H, Park S K 2021 Adv. Intell. Syst. 3 2000162 Google Scholar
[137]	Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T 2009 Science 326 1516 Google Scholar
[138]	He Y L, Liu R, Jiang S S, Chen C S, Zhu L, Shi Y, Wan Q 2020 J. Phys. D: Appl. Phys. 53 215106 Google Scholar
[139]	Yang X X, Yu J R, Zhao J, Chen Y H, Gao G Y, Wang Y F, Sun Q J, Wang Z L 2020 Adv. Funct. Mater. 30 2002506 Google Scholar
[140]	Zhao T S, Zhao C, Xu W Y, Liu Y N, Gao H, Mitrovic I Z, Lim E G, Yang L, Zhao C Z 2021 Adv. Funct. Mater. 31 2106000 Google Scholar
[141]	Park E, Kim M, Kim T S, Kim I S, Park J, Kim J, Jeong Y, Lee S, Kim I, Park J K, Kim G T, Chang J, Kang K, Kwak J Y 2020 Nanoscale 12 24503 Google Scholar
[142]	Feng G, Jiang J, Zhao Y, Wang S, Liu B, Yin K, Niu D, Li X, Chen Y, Duan H, Yang J, He J, Gao Y, Wan Q 2020 Adv. Mater. 32 1906171 Google Scholar
[143]	Basbaum A I, Bautista D M, Scherrer G, Julius D 2009 Cell 139 267 Google Scholar
[144]	Lee Y, Lee T W 2019 Accounts Chem. Res. 52 964 Google Scholar
[145]	Hou Y X, Li Y, Zhang Z C, Li J Q, Qi D H, Chen X D, Wang J J, Yao B W, Yu M X, Lu T B, Zhang J 2021 ACS Nano 15 1497 Google Scholar
[146]	Li Y, Xuan Z H, Lu J K, Wang Z R, Zhang X M, Wu Z H, Wang Y Z, Xu H, Dou C M, Kang Y, Liu Q, Lv H B, Shang D S 2021 Adv. Funct. Mater. 31 2100042 Google Scholar
[147]	Jang Y W, Kang J, Jo J W, Kim Y H, Kim J, Park S K 2021 Sens. Actuator B: Chem. 342 130058 Google Scholar
[148]	Yang J C, Mun J, Kwon S Y, Park S, Bao Z, Park S 2019 Adv. Mater. 31 1904765 Google Scholar
[149]	Wan C J, Liu Y H, Feng P, Wang W, Zhu L Q, Liu Z P, Shi Y, Wan Q 2016 Adv. Mater. 28 5878 Google Scholar
[150]	Kim Y, Chortos A, Xu W, Liu Y, Oh J Y, Son D, Kang J, Foudeh A M, Zhu C, Lee Y, Niu S, Liu J, Pfattner R, Bao Z, Lee T W 2018 Science 360 998 Google Scholar
[151]	Jiang S, He Y, Liu R, Chen C, Zhu L, Zhu Y, Shi Y, Wan Q 2021 IEEE T. Electron Dev. 68 415 Google Scholar
[152]	Ling H, Koutsouras D A, Kazemzadeh S, van de Burgt Y, Yan F, Gkoupidenis P 2020 Appl. Phys. Rev. 7 011307 Google Scholar
[153]	Zhu Q B, Li B, Yang D D, Liu C, Feng S, Chen M L, Sun Y, Tian Y N, Su X, Wang X M, Qiu S, Li Q W, Li X M, Zeng H B, Cheng H M, Sun D M 2021 Nat. Commun. 12 1798 Google Scholar
[154]	Gao S, Liu G, Yang H, Hu C, Chen Q, Gong G, Xue W, Yi X, Shang J, Li R W 2019 ACS Nano 13 2634 Google Scholar
[155]	Wang G, Wang R, Kong W, Zhang J 2018 Cogn. Neurodynamics 12 615 Google Scholar
[156]	Yamamoto Y, Harada S, Yamamoto D, Honda W, Arie T, Akita S, Takei K 2016 Sci. Adv. 2 e1601473 Google Scholar
[157]	Wu X, Li E, Liu Y, Lin W, Yu R, Chen G, Hu Y, Chen H, Guo T 2021 Nano Energy 85 106000 Google Scholar
[158]	Wan C, Cai P, Guo X, Wang M, Matsuhisa N, Yang L, Lv Z, Luo Y, Loh X J, Chen X 2020 Nat. Commun. 11 4602 Google Scholar
[159]	Shastri B J, Tait A N, de Lima T F, Pernice W H P, Bhaskaran H, Wright C D, Prucnal P R 2021 Nat. Photonics 15 102 Google Scholar
[160]	Song S, Kim J, Kwon S M, Jo J W, Park S K, Kim Y-H 2021 Adv. Intell. Syst. 3 2000119 Google Scholar
[161]	Komar M S 2017 Autom. Control Comp. Sci. 51 701 Google Scholar

[1]	Li Yan, Chen Xin-Li, Wang Wei-Sheng, Shi Zhi-Wen, Zhu Li-Qiang. Egg shell membrane based electrolyte gated oxide neuromorphic transistor. Acta Physica Sinica, 2023, 72(15): 157302. doi: 10.7498/aps.72.20230411
[2]	Guo Li-Qiang, Tao Jian, Wen Juan, Cheng Guang-Gui, Yuan Ning-Yi, Ding Jian-Ning. Corn starch solid electrolyte gated proton/electron hybrid synaptic transistor. Acta Physica Sinica, 2017, 66(16): 168501. doi: 10.7498/aps.66.168501
[3]	Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica, 2016, 65(16): 168501. doi: 10.7498/aps.65.168501
[4]	Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402. doi: 10.7498/aps.65.038402
[5]	Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2013, 62(15): 157202. doi: 10.7498/aps.62.157202
[6]	Su Li-Na, Gu Xiao-Feng, Qin Hua, Yan Da-Wei. Analytical I-V model and numerical analysis of single electron transistor. Acta Physica Sinica, 2013, 62(7): 077301. doi: 10.7498/aps.62.077301
[7]	Dong Jing, Chai Yu-Hua, Zhao Yue-Zhi, Shi Wei-Wei, Guo Yu-Xiu, Yi Ming-Dong, Xie Ling-Hai, Huang Wei. The progress of flexible organic field-effect transistors. Acta Physica Sinica, 2013, 62(4): 047301. doi: 10.7498/aps.62.047301
[8]	Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng. Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301. doi: 10.7498/aps.61.207301
[9]	Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301. doi: 10.7498/aps.61.047301
[10]	Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2012, 61(5): 057202. doi: 10.7498/aps.61.057202
[11]	Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica, 2011, 60(1): 017205. doi: 10.7498/aps.60.017205
[12]	Feng Chao-Wen, Cai Li, Kang Qiang, Peng Wei-Dong, Bai Peng, Wang Jia-Fu. Realization of the discrete chaotic system based on SET-MOS circuits. Acta Physica Sinica, 2011, 60(11): 110502. doi: 10.7498/aps.60.110502
[13]	Sui Bing-Cai, Fang Liang, Zhang Chao. Conductance of single-electron transistor with single island. Acta Physica Sinica, 2011, 60(7): 077302. doi: 10.7498/aps.60.077302
[14]	Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei. High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica, 2010, 59(10): 7333-7337. doi: 10.7498/aps.59.7333
[15]	Lin Feng, Li Zuan-Yi, Wang Shan-Ying. Mechanical and electronic properties of TiO2 nanotubes. Acta Physica Sinica, 2009, 58(12): 8544-8548. doi: 10.7498/aps.58.8544
[16]	Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica, 2008, 57(7): 4487-4491. doi: 10.7498/aps.57.4487
[17]	Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu　Liang, Xu　Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121. doi: 10.7498/aps.56.4117
[18]	Guo Rong-Hui, Zhao Zheng-Ping, Hao Yue, Liu Yu-Gui, Wu Yi-Bin, Lü Miao. Realization and output characteristics analysis of the multiple islands single- electron transistors. Acta Physica Sinica, 2005, 54(4): 1804-1808. doi: 10.7498/aps.54.1804
[19]	Zhang Zhi-Yong, Wang Tai-Hong. Multipeak negative-differential-resistance device by combining SET and MOSFET. Acta Physica Sinica, 2003, 52(7): 1766-1770. doi: 10.7498/aps.52.1766
[20]	Wu Fan, Wang Tai-Hong. Ｓｔａｂｉｌｉｔｙｄｉａｇｒａｍｓｆｏｒｓｉｎｇｌｅｅｌｅｃｔｒｏｎｔｒａｎｓｉｓｔｏｒｓ. Acta Physica Sinica, 2002, 51(12): 2829-2835. doi: 10.7498/aps.51.2829

Catalog

Vol. 71, Issue 14 - 2022-07-20

Metrics

Abstract views: 7378
PDF Downloads: 382
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板