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Studies on electrical properties of delta-doping p-GaN films

Li Tong Wang Huai-Bing Liu Jian-Ping Niu Nan-Hui Zhang Nian-Guo Xing Yan-Hui Han Jun Liu Ying Gao Guo Shen Guang-Di

Studies on electrical properties of delta-doping p-GaN films

Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di
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Publishing process
  • Received Date:  03 April 2006
  • Accepted Date:  30 June 2006
  • Published Online:  05 January 2007

Studies on electrical properties of delta-doping p-GaN films

  • 1. 北京工业大学北京市光电子技术实验室,北京 100022

Abstract: Mg delta-doped GaN epilayers have been grown by metalorganic chemical vapor deposition, and their characteristics have been investigated. It is shown that not only the p-type conduction, but also the overall quality of p-GaN is improved by delta-doping. It is observed that the dislocation density is reduced due to the growth interruption. A pre-purge step has been employed during delta-doping process, but the carrier concentration was decreased by the pre-purge.

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