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摘要: 采用低压金属有机气相外延（LPMOCVD）设备生长并制作了1.55μm AlGaInAs-InP偏振无关半导体光放大器，有源区为3周期的张应变量子阱结构，应变量为0.35%；器件制作成脊型波导结构，并采用7°斜腔结构以有效抑制腔面反射；经蒸镀减反膜后，半导体光放大器的自发辐射功率的波动小于0.3 dB，3 dB带宽为 50 nm,半导体光放大器小信号增益近20dB，带宽亦为50 nm.在1530—1580nm波长范围内偏振灵敏度小于0.5dB，峰值增益波长的饱和输出功率达7dBm；器件增益随温度的升高而
Abstract: Polarization-insensitive AlGaInAs-InP semiconductor optical amplifier is realized at wavelength of 1.55 μm. The active layer consists of three tensile-strained wells with a strain of 0.35%. The amplifier is fabricated with a ridge waveguide structure. The testing result shows that the amplifiers have an excellent polarization insensitivity (less than 0.5 dB) over the entire range of wavelength (from 1530 to 1580nm). The 1540 nm wavelength optical gain is 20 dB at the bias current of 200 mA. The AlGaInAs-InP optical amplifier shows good temperature characteristics, less than a 3dB reduction in the gain and polarization-insen sitivity when the temperature is raised from 25℃ to 65℃.
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