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Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity

Zhou Bing-Qing Wu Zhong-Hua Chen Xing Liu Feng-Zhen Zhu Mei-Fang Zhou Yu-Qin

Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity

Zhou Bing-Qing, Wu Zhong-Hua, Chen Xing, Liu Feng-Zhen, Zhu Mei-Fang, Zhou Yu-Qin
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  • Received Date:  25 August 2006
  • Accepted Date:  31 October 2006
  • Published Online:  20 April 2007

Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity

  • 1. (1)内蒙古师范大学物理与电子信息学院,呼和浩特 010022; (2)中国科学院高能物理研究所北京同步辐射实验室,北京 100049; (3)中国科学院研究生院物理科学学院,北京 100049

Abstract: The microcrystalline silicon films at different growth stages were deposited by plasma-enhanced chemical vapor deposition (PECVD). The reflectivity of grazing incidence X-ray from synchrotron radiation has been applied to investigate the evolution of surface roughness of these thin films. By study of surface morphology of microcrystalline silicon (μc-Si:H), we understand their growth kinetics and growth mechanism. The results show that the growth exponent β is 0.21±0.01 and 0.24±0.01 for μc-Si:H films deposited on glass substrate at fixed substrate temperature, Under the following condition of electrode distance, pressure, rf power density, H2 dilutied at 200 ℃ to be 2 cm, 6.66×102 Pa and 0.22 W/cm2, 99% and 98%, respectively. According to the KPZ model in the PECVD case the growth mechanism of the μc-Si:H films is a finite diffusion growth.

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