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Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness

Gao Hong-Ling Li Dong-Lin Wang Bao-Qiang Zhu Zhan-Ping Zeng Yi-Ping Zhou Wen-Zheng Shang Li-Yan

Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness

Gao Hong-Ling, Li Dong-Lin, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping, Zhou Wen-Zheng, Shang Li-Yan
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  • Received Date:  30 August 2006
  • Accepted Date:  25 January 2007
  • Published Online:  05 April 2007

Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness

  • 1. (1)中国科学院半导体研究所,北京 100083; (2)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083

Abstract: Magnetotransport properties of In0.53GaAs/In0.52AlAs high electron mobility transistor (HEMT) structures with different channel thickness of 10—35 nm have been investigated in magnetic fields up to 13 T at 1.4 K. Fast Fourier transform has been employed to obtain the subband density and mobility of the two-dimensional electron gas in these HEMT structures. We found that the thickness of channel does not significantly enhance the electron density of the two-dimensional electron gas, however, it has strong effect on the proportion of electrons inhabited in different subbands. When the size of channel is 20 nm, the number of electrons occupying the excited subband, which have higher mobility, reaches the maximum. The experimental values obtained in this work are useful for the design and optimization of InGaAs/InAlAs HEMT devices.

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