Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Structure of MnxGe1-x dilute magnetic semiconductor films

Sun Zhi-Hu Ye Jian Pan Zhi-Yun Wei Shi-Qiang Sun Yu Zhu San-Yuan Shi Tong-Fei Liu Wen-Han

Structure of MnxGe1-x dilute magnetic semiconductor films

Sun Zhi-Hu, Ye Jian, Pan Zhi-Yun, Wei Shi-Qiang, Sun Yu, Zhu San-Yuan, Shi Tong-Fei, Liu Wen-Han
PDF
Get Citation
Metrics
  • Abstract views:  3979
  • PDF Downloads:  1039
  • Cited By: 0
Publishing process
  • Received Date:  23 January 2007
  • Accepted Date:  25 February 2007
  • Published Online:  20 September 2007

Structure of MnxGe1-x dilute magnetic semiconductor films

  • 1. (1)中国科学技术大学国家同步辐射实验室,合肥 230029; (2)中国科学技术大学国家同步辐射实验室,合肥 230029;中国科学技术大学物理系,合肥 230026; (3)中国科学技术大学物理系,合肥 230026

Abstract: The structure of MnxGe1-x dilute magnetic semiconductor thin films prepared by magnetron co-sputtering has been studied by X-ray diffraction (XRD) and X-ray absorption fine structure (XAFS) techniques. The XRD results show that in the MnxGe1-x thin film with low Mn doping concentration (x=0.070), only diffraction peaks attributed to crystalline Ge can be observed. In samples with high Mn doping concentrations (x=0.250, 0.360), the secondary phase Ge3Mn5 appears, and its content enhances with Mn doping concentration. The XAFS results indicate that for the Mn0.07Ge0.93 thin film, Mn atoms are mainly incorporated into the Ge lattice and located at the substitutional sites of Ge atoms with the ratio of 75%, while for the Mn0.25Ge0.75 and Mn0.36Ge0.64 samples, most of the Mn atoms are aggregated to form Ge3Mn5.

Catalog

    /

    返回文章
    返回