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Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model

Yang Rui-Xia Xu Na-Ying Li Ruo-Fan Ma Yong-Qiang Wu Yi-Bin Zhang Zhi-Guo

Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model

Yang Rui-Xia, Xu Na-Ying, Li Ruo-Fan, Ma Yong-Qiang, Wu Yi-Bin, Zhang Zhi-Guo
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  • Received Date:  22 July 2007
  • Accepted Date:  18 October 2007
  • Published Online:  25 April 2008

Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model

  • 1. (1)河北工业大学信息工程学院,天津 300130; (2)河北工业大学信息工程学院,天津 300130;中国电子科技集团公司第十三研究所,石家庄 050051; (3)河北工业大学信息工程学院,天津 300130;中国电子科技集团公司第十三研究所,石家庄 050051;河北工程大学信息与电气工程学院,邯郸 056038; (4)中国电子科技集团公司第十三研究所,石家庄 050051

Abstract: Current collapse in AlGaN/GaN high-electron-mobility transistors was studied and the effect of effective external electrical field on the concentration of two-dimensional electron gas (2DEG) near the channel of hetero-junction of AlGaN/GaN was simulated through the self-consistent implementation of the one-dimensional Poisson-Schrdinger equations. An inverse piezoelectric polarization model was proposed to analyze the degradation of 2DEG and the current collapse. It was found that the density of 2DEG was strongly dependent on the inverse polarization. When the voltage was 0,10 and 15 V, the density was 1.53×1013cm-2, 1.04×1013cm-2 and 0.789×1013cm-2, respectively. It was clear that the 2DEG density dropped 48.4% with voltage increasing from 0 to 15V when the inverse piezoelectric polarization was considered. At last, the method of restraining current collapse was further discussed.

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