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通过采集等功率的两种不同开态直流应力作用下AlGaN/GaN高电子迁移率晶体管(HEMTs)漏源电流输出特性、源区和漏区大信号寄生电阻、转移特性、阈值电压随应力时间的变化, 并使用光发射显微镜观察器件漏电流情况, 研究了开态应力下电压和电流对AlGaN/GaN高电子迁移率晶体管的退化作用. 结果表明, 低电压大电流应力下器件退化很少, 高电压大电流下器件退化较明显. 高电压是HEMTs退化的主要因素, 栅漏之间高电场引起的逆压电效应对参数的永久性退化起决定性作用. 除此之外, 器件表面损坏部位的显微图像表明低电压大电流下器件失效是由于局部电流密度过高, 出现热斑导致器件损伤引起的.
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关键词:
- AlGaN/GaN高电子迁移率晶体管 /
- 电压 /
- 电流 /
- 退化
[1] Soltani A, Rousseau M, Gerbedoen J C, Mattalah M, Bonanno P L, Telia A, Bourzgui N, Patriarche G, Ougazzaden A, BenMoussa A 2014 Appl. Phys. Lett. 104 233506
[2] Perez-Tomas A, Fontsere A, Sanchez S, Jennings M R, Gammon P M, Cordier Y 2013 Appl. Phys. Lett. 102 0235112
[3] Huang J, Li M, Tang C W, Lau K M 2014 Chin. Phys. B 23 128102
[4] Jungwoo J, Xia L 2007 IEEE International Electron Devices Meeting Washington DC, USA, December 10-12, 2007 p385
[5] Jungwoo J, del Alamo J A 2008 IEEE Electron Dev. Lett. 29 287
[6] Dammann M, Pletschen W, Waltereit P, Bronner W, Quay R, Mller S, Mikulla M, Ambacher O, van der Wel P J, Murad S, Rödle T, Behtash R, Bourgeois F, Riepe K, Fagerlind M, Sveinbjörnsson E Ö 2009 Microelectron Reliab. 49 474
[7] Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese) [谷文萍, 郝跃, 张进城, 王冲, 冯倩, 马晓华 2009 物理学报 58 511]
[8] Greenberg D R, del Alamo J A, Bhat R 1995 IEEE Trans. Electron Dev. 42 1574
[9] Greenberg D R, del Alamo J A 1996 IEEE Trans. Electron Dev. 43 1304
[10] Barry E A, Kim K W, Kochelap V A 2002 Appl. Phys. Lett. 80 2317
[11] Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE Trans. Electron Dev. 59 1393
[12] Meneghini M, Stocco A, Silvestri R, Meneghesso G, Zanoni E 2012 Appl. Phys. Lett. 100 233508
[13] Joh J, Del Alamo J A 2011 IEEE Trans. Electron Dev. 58 132
[14] Shi L, Feng S W, Guo C S, Zhu H, Wan N 2013 Chin. Phys. B 22 027201
[15] Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Electron Dev. Lett. 19 89
-
[1] Soltani A, Rousseau M, Gerbedoen J C, Mattalah M, Bonanno P L, Telia A, Bourzgui N, Patriarche G, Ougazzaden A, BenMoussa A 2014 Appl. Phys. Lett. 104 233506
[2] Perez-Tomas A, Fontsere A, Sanchez S, Jennings M R, Gammon P M, Cordier Y 2013 Appl. Phys. Lett. 102 0235112
[3] Huang J, Li M, Tang C W, Lau K M 2014 Chin. Phys. B 23 128102
[4] Jungwoo J, Xia L 2007 IEEE International Electron Devices Meeting Washington DC, USA, December 10-12, 2007 p385
[5] Jungwoo J, del Alamo J A 2008 IEEE Electron Dev. Lett. 29 287
[6] Dammann M, Pletschen W, Waltereit P, Bronner W, Quay R, Mller S, Mikulla M, Ambacher O, van der Wel P J, Murad S, Rödle T, Behtash R, Bourgeois F, Riepe K, Fagerlind M, Sveinbjörnsson E Ö 2009 Microelectron Reliab. 49 474
[7] Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese) [谷文萍, 郝跃, 张进城, 王冲, 冯倩, 马晓华 2009 物理学报 58 511]
[8] Greenberg D R, del Alamo J A, Bhat R 1995 IEEE Trans. Electron Dev. 42 1574
[9] Greenberg D R, del Alamo J A 1996 IEEE Trans. Electron Dev. 43 1304
[10] Barry E A, Kim K W, Kochelap V A 2002 Appl. Phys. Lett. 80 2317
[11] Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE Trans. Electron Dev. 59 1393
[12] Meneghini M, Stocco A, Silvestri R, Meneghesso G, Zanoni E 2012 Appl. Phys. Lett. 100 233508
[13] Joh J, Del Alamo J A 2011 IEEE Trans. Electron Dev. 58 132
[14] Shi L, Feng S W, Guo C S, Zhu H, Wan N 2013 Chin. Phys. B 22 027201
[15] Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Electron Dev. Lett. 19 89
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