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Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate

Xiong Chuan-Bing Jiang Feng-Yi Fang Wen-Qing Wang Li Mo Chun-Lan

Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate

Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan
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  • Abstract views:  3634
  • PDF Downloads:  1636
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Publishing process
  • Received Date:  18 September 2007
  • Accepted Date:  24 October 2007
  • Published Online:  28 May 2008

Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate

  • 1. 南昌大学教育部发光材料与器件工程研究中心,南昌 330047;晶能光电(江西)有限公司,南昌 330096

Abstract: InGaN multiple-quantum-well(MQW) light-emitting diode(LED) thin films were successfully transferred from the original Si(111) substrate to new Si substrate, and then the vertical structure LEDs were fabricated. After the original substrate removal, the residual tensile stress in GaN layer of the transfferred film is partially relaxed, while the compressive stress in InGaN well layer is increased. When the buffer layer of the transferred LED film was eliminated, the tensile stress in GaN layer was shown to increase. However, the compressive stress in InGaN well layer was kept unvaried. The performance of the vertical LEDs was significantly improved compared with the lateral LEDs.

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