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Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing

Lin Ruo-Bing Wang Xin-Juan Feng Qian Wang Chong Zhang Jin-Cheng Hao Yue

Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing

Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue
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Publishing process
  • Received Date:  18 September 2007
  • Accepted Date:  05 December 2007
  • Published Online:  20 July 2008

Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing

  • 1. 西安电子科技大学微电子学院,宽禁带半导体技术重点实验室,西安 710071

Abstract: Under different stress, the current collapse, gate current leakage and breakdown voltages of AlGaN/GaN high electron mobility transistors change before and after high temperature annealing. The results show that characteristics of devices are greatly improved for AlGaN/GaN high electron mobility transistor after Schottky high temperature annealing. Interface of Schottky contacts is studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) before and after high temperature annealing. The analysis indicates that eliminating the medium between Ni and AlGaN and reducing of traps near the surface of AlGaN can improve the effective Schottky barrier, which can enhance the electric characteristics of the devices.

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