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Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode

Tang Nai-Yun

Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode

Tang Nai-Yun
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  • Abstract views:  3450
  • PDF Downloads:  854
  • Cited By: 0
Publishing process
  • Received Date:  20 March 2008
  • Accepted Date:  15 November 2008
  • Published Online:  20 May 2009

Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode

  • 1. 上海电力学院,上海 200090

Abstract: The spin-polarized tunneling current transport through a ferromagnetic GaMnN resonant tunneling diode is investigated theoretically. Two distinct spin splitting peaks can be observed in the current-voltage characteristic. Spin splitting peaks and the spin polarization decrease and then disappear with increasing temperature. When charge polarization effect is considered for the GaN heterostructure, the spin-down resonant current peak becomes enhanced significantly and spin polarization is also increased accordingly. A highly spin polarized current can be obtained at a certain polarization charge.

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