High electron mobility lattice-matched InAlN/GaN materials

Zhang Jin-Feng; Wang Ping-Ya; Xue Jun-Shuai; Zhou Yong-Bo; Zhang Jin-Cheng; Hao Yue

doi:10.7498/aps.60.117305

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Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materialsJ. Acta Physica Sinica, 2011, 60(11): 117305. DOI: 10.7498/aps.60.117305

Citation:

Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materialsJ. Acta Physica Sinica, 2011, 60(11): 117305. DOI: 10.7498/aps.60.117305

Citation:

Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materialsJ. Acta Physica Sinica, 2011, 60(11): 117305. DOI: 10.7498/aps.60.117305