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Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor

Gao Bo Cui Jiang-Wei Lan Bo Li Ming Wang Yi-Yuan Yu Xue-Feng Ren Di-Yuan

Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor

Gao Bo, Cui Jiang-Wei, Lan Bo, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan
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  • Received Date:  14 July 2010
  • Accepted Date:  09 September 2010
  • Published Online:  05 March 2011

Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor

  • 1. (1)Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Graduate University of Chinese Academy of Sciences, Beijing 100049, China; Xinjiang Autonomous Region Key Laboratory of Electronics Information Mater; (2)Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Autonomous Region Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China

Abstract: In this paper, the ionizing damage effects and the annealing behaviors of an import producti, p-type metal-oxide-semiconductor field-effect transistor (PMOSFET), an unhardened 4007 circuit under different doses are investigated. We measure the sub-threshold I-V characteristic curves of PMOSFET under different bias doses. The dependence of the drift of threshold voltage on total dose is discussed. We also observe the relationship between the parameter and the annealing time. The experiment results show that the PMOSFET of this kind can enhance low dose rate sensitivity (ELDRS) effect. The interface-trap formation by H+ transmission in the SiO2 is explained.We believe that the interface trap is a primary reason to induce ELDRS effect of PMOSFET. We also discuss the physical model of enhancing low dose rate sensitivity effect of PMOSFET.

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