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Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates

Lü You-Ming Su Shi-Chen Mei Ting

Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates

Lü You-Ming, Su Shi-Chen, Mei Ting
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  • Abstract views:  4875
  • PDF Downloads:  867
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Publishing process
  • Received Date:  17 January 2011
  • Accepted Date:  29 March 2011
  • Published Online:  15 September 2011

Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates

  • 1. (1)College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China; (2)Key Laboratory of Electroluminescent Devices, Department of Education of Guangdong Province, China Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, China

Abstract: The ZnO/Zn0.85Mg0.15O multiple quantum wells(MQWs)are fabricated on m-Al2O3 substrates by plasma-assisted molecular beam epitaxy (P-MBE) using a ZnMgO buffer layers. The reflection high-energy electron diffraction (RHEED) images indicate that the MQWs are of two-dimensional growth .The temperature dependent photoluminescence (PL) of the MQW also shows the quantum confine effect even at room temperature. The PL peak of 3nm MQW is 3.405 eV at 290 K.The PL spectrum in ZnO/Zn0.85Mg0.15O MQW is dominated by localized exciton emission at low temperatures, while the free exciton transition gradually dominates the spectrum at higher temperatures up to room temperature. The exciton binding energy in the 3 nm ZnO/Zn0.85Mg0.15O MQW is about 73 meV.

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