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INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP

SHEN HONG-LIE YANG GEN-QING ZHOU ZU-YAO ZOU SHI-CHANG

INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP

SHEN HONG-LIE, YANG GEN-QING, ZHOU ZU-YAO, ZOU SHI-CHANG
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  • Received Date:  08 May 1990
  • Published Online:  01 July 2005

INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP

  • 1. 中国科学院上海冶金研究所离子束开放研究实验室,上海,200050

Abstract: The electrical properties and characteristics of photoluminescence (PL) at 11K for InP implanted with Si+ at 200℃ have been studied. It has been found that the sheet electron concentration in Si+ simply implanted sample tends to a saturation level with increasing the Si+ dose, while that in Si++P+ dually implanted sample increases greatly. The 11K PL spectra reveals that there exists Sip-Vp complex in Si+ implanted InP, which can be inhibited by co-implanting P+. The mechanism of improved electrical properties by Si++P+ dual implants is, also discussed.

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